公开(公告)号：US10361065B2

公开(公告)日：2019-07-23

申请号：US15760994

申请日：2015-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kengo Asai ,  Toru Iwaya ,  Hisayuki Takasu ,  Hiroyasu Shichi

IPC: H01J37/31 ,  H01J37/28 ,  H01J37/20 ,  H01J37/09 ,  H01J37/08 ,  H01J37/305

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

公开(公告)号：US10304653B2

公开(公告)日：2019-05-28

申请号：US15500449

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo Asai ,  Hiroyasu Shichi ,  Hisayuki Takasu ,  Toru Iwaya

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/305 ,  H01J27/04

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

公开(公告)号：US10332722B2

公开(公告)日：2019-06-25

申请号：US15500392

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo Asai ,  Hiroyasu Shichi ,  Hisayuki Takasu ,  Toru Iwaya

IPC: H01J37/302 ,  H01J37/24 ,  H01J37/08 ,  H01J37/305 ,  H01J37/304 ,  H01J27/04

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

公开(公告)号：US11257654B2

公开(公告)日：2022-02-22

申请号：US16316289

申请日：2016-07-14

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kengo Asai ,  Hiroyasu Shichi ,  Toru Iwaya ,  Hisayuki Takasu

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/09

Abstract: To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.