公开(公告)号：US10008365B2

公开(公告)日：2018-06-26

申请号：US15011980

申请日：2016-02-01

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/20 ,  H01J37/304

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J37/3005 ,  H01J37/3007 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/26

摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

公开(公告)号：US11133153B2

公开(公告)日：2021-09-28

申请号：US16012423

申请日：2018-06-19

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

IPC分类号： H01J37/30 ,  H01J37/305 ,  H01J37/20 ,  H01J37/304

摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

公开(公告)号：US10515777B2

公开(公告)日：2019-12-24

申请号：US14901506

申请日：2014-07-11

申请人： Hitachi High-Technologies Corporation

发明人： Atsushi Kamino ,  Hisayuki Takasu ,  Hirobumi Muto

IPC分类号： H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J37/305

摘要： This ion milling device is provided with a vacuum chamber (105), an exhaust device (101) for evacuating the interior of the vacuum chamber, a sample stage (103) for supporting a sample (102) to be irradiated inside the vacuum chamber, a heater (107) for heating the interior of the vacuum chamber, a gas source (106) for introducing into the vacuum chamber a gas serving as a heating medium, and a controller (110) for controlling the gas source, the controller controlling the gas source so that the vacuum chamber internal pressure is in a predetermined state during heating by the heater. This enables the control in a short time of the temperature for suppressing condensation, or the like, occurring at atmospheric release after cooling and ion milling a sample.

公开(公告)号：US09499900B2

公开(公告)日：2016-11-22

申请号：US14379805

申请日：2013-02-18

申请人： Hitachi High-Technologies Corporation

发明人： Atsushi Kamino ,  Hisayuki Takasu ,  Hirobumi Muto ,  Toru Iwaya

IPC分类号： C23C14/30 ,  G01N1/32 ,  H01J37/305 ,  H01J37/20 ,  H01J37/30

CPC分类号： C23C14/30 ,  G01N1/32 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/317 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01J2237/334

摘要： The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.

摘要翻译： 本发明有利地提供了一种能够以简单结构设置高精度加工区域的离子铣削装置。 离子研磨装置包括保持样品的保持器和用离子束部分地限制样品的照射的掩模。 样品保持器包括接触位于离子束的通过轨道侧的样品的端面的第一接触表面和接触掩模的端面的第二接触表面，使得掩模位于间隔开的位置 离子束除了第一接触表面以外。

公开(公告)号：US20150008121A1

公开(公告)日：2015-01-08

申请号：US14379805

申请日：2013-02-18

申请人： Hitachi High-Technologies Corporation

发明人： Atsushi Kamino ,  Hisayuki Takasu ,  Hirobumi Muto ,  Toru Iwaya

IPC分类号： C23C14/30 ,  H01J37/305

CPC分类号： C23C14/30 ,  G01N1/32 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/317 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01J2237/334

摘要： The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.

摘要翻译： 本发明旨在提供一种能够以简单的结构设置高精度加工区域的离子铣削装置。 为了实现上述目的，提出了一种离子铣削装置，其包括保持样品的样品保持器和部分地限制用离子束照射样品的掩模，其中样品保持器包括与第一接触表面接触的第一接触表面 所述样品的端面位于所述离子束的通过轨道侧，以及与所述掩模的端面接触的第二接触表面，使得所述掩模位于比所述离子束更远离所述离子束的位置 接触面。