公开(公告)号：US20210210387A1

公开(公告)日：2021-07-08

申请号：US17202807

申请日：2021-03-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/768 ,  B23K26/53 ,  B28D5/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/304 ,  H01L23/00 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20160343618A1

公开(公告)日：2016-11-24

申请号：US15226417

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L21/306 ,  H01L21/268 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20170271210A1

公开(公告)日：2017-09-21

申请号：US15617431

申请日：2017-06-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  B28D5/00 ,  H01L21/768 ,  B23K26/40 ,  H01L23/00 ,  H01L21/306 ,  B23K26/0622 ,  B23K26/00 ,  H01L21/304

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20160111333A1

公开(公告)日：2016-04-21

申请号：US14984066

申请日：2015-12-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/268

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20150171127A1

公开(公告)日：2015-06-18

申请号：US14627238

申请日：2015-02-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroshi OGURI ,  Yoshitaka ISHIKAWA ,  Akira SAKAMOTO ,  Tomoya TAGUCHI ,  Yoshimaro FUJII

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions

Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程

公开(公告)号：US20130316517A1

公开(公告)日：2013-11-28

申请号：US13953443

申请日：2013-07-29

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20180350682A1

公开(公告)日：2018-12-06

申请号：US16050640

申请日：2018-07-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L21/78 ,  H01L21/768 ,  B23K26/0622 ,  H01L23/00 ,  H01L23/544 ,  B23K26/40 ,  B23K26/53

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20180090535A1

公开(公告)日：2018-03-29

申请号：US15782114

申请日：2017-10-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Terumasa NAGANO ,  Kazuhisa YAMAMURA ,  Kenichi SATO ,  Ryutaro TSUCHIYA

IPC: H01L27/146 ,  H01L31/115 ,  H01L31/0224 ,  G01T1/29 ,  G01T1/24

CPC classification number: H01L27/14663 ,  G01N23/046 ,  G01T1/241 ,  G01T1/2985 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14661 ,  H01L31/022408 ,  H01L31/115 ,  H01L2224/13

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

公开(公告)号：US20170200693A1

公开(公告)日：2017-07-13

申请号：US15320835

申请日：2015-08-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Hiroshi OGURI ,  Akira SAKAMOTO ,  Tomoya TAGUCHI

IPC: H01L23/00 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0203

CPC classification number: H01L24/73 ,  H01L23/12 ,  H01L23/15 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L2224/0347 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/2747 ,  H01L2224/28105 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29018 ,  H01L2224/29083 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/83444 ,  H01L2224/83469 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/0105 ,  H01L2924/00014

Abstract: An electronic component includes a base, a laminate of a plurality of conductive metal material layers, and a solder layer made of Au—Sn alloy solder. The laminate is disposed on the base. The solder layer is disposed on the laminate. The laminate includes a surface layer made of Au as the conductive metal material layer constituting an outermost layer. The surface layer includes a solder layer-disposing region in which the solder layer is disposed and a solder layer-empty region in which the solder layer is not disposed. The solder layer-disposing region and the solder layer-empty region are spatially separated from each other.

公开(公告)号：US20160343674A1

公开(公告)日：2016-11-24

申请号：US15226662

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/268 ,  H01L21/304 ,  H01L21/78 ,  H01L23/544

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract translation: 一种衬底分割方法，其可以在防止碎裂的同时对衬底进行薄层化和分裂，并发生裂纹。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。