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    SEMICONDUCTOR PHOTODETECTION DEVICE
    1.
    发明申请
    SEMICONDUCTOR PHOTODETECTION DEVICE 有权

    公开(公告)号：US20210296387A1

    公开(公告)日：2021-09-23

    申请号：US17260324

    申请日：2019-06-10

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Ryutaro TSUCHIYA ,  Terumasa NAGANO ,  Takashi BABA

    IPC: H01L27/146

    Abstract: A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

    PHOTODETECTION DEVICE, SEMICONDUCTOR PHOTODETECTION ELEMENT, AND METHOD FOR DRIVING SEMICONDUCTOR PHOTODETECTION ELEMENT
    3.
    发明申请
    PHOTODETECTION DEVICE, SEMICONDUCTOR PHOTODETECTION ELEMENT, AND METHOD FOR DRIVING SEMICONDUCTOR PHOTODETECTION ELEMENT 有权

    公开(公告)号：US20210344864A1

    公开(公告)日：2021-11-04

    申请号：US17258947

    申请日：2019-06-06

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shinya IWASHINA ,  Shunsuke ADACHI ,  Shigeyuki NAKAMURA ,  Terumasa NAGANO ,  Ryutaro TSUCHIYA

    IPC: H04N5/374 ,  H01L27/146

    Abstract: Each of a plurality of cells includes at least one avalanche photodiode. A light projecting unit is arranged to project light having a cross-sectional shape whose longitudinal direction corresponds to a first direction. The light projecting unit is arranged to scan the light along a second direction intersecting the first direction such that the reflected light is incident on, among N cell groups each of which includes M cells aligned in a row direction, each cell group or each plurality of cell groups. A controller is arranged to apply, in accordance with the incidence of the reflected light, a bias voltage that makes the avalanche photodiode operate in a Geiger mode to each cell group or each plurality of cell groups, and is arranged to read signals from cells included in the cell group or the plurality of cell groups to which the bias voltage has been applied.

    PHOTODIODE ARRAY
    9.
    发明申请
    PHOTODIODE ARRAY 有权
    光斑阵列

    公开(公告)号：US20140117484A1

    公开(公告)日：2014-05-01

    申请号：US13710845

    申请日：2012-12-11

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Terumasa NAGANO ,  Kazuhisa YAMAMURA ,  Kenichi SATO ,  Ryutaro TSUCHIYA

    IPC: H01L27/144

    CPC classification number: H01L27/1446 ,  H01L31/107

    Abstract: Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.

    Abstract translation: 每个光检测单元包括输出载体的半导体区域和表面电极。 在光电二极管阵列中，读线被定位在相邻的雪崩光电二极管之间。 当将包括半导体区域的表面的平面设定为基准面时，从基准面到读取线的距离tb大于从基准面到表面电极的距离。

    OPTICAL DETECTOR
    10.
    发明申请
    OPTICAL DETECTOR 有权
    光学检测器

    公开(公告)号：US20160322417A1

    公开(公告)日：2016-11-03

    申请号：US15104359

    申请日：2014-12-16

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Terumasa NAGANO ,  Kenichi SATO ,  Ryutaro TSUCHIYA

    IPC: H01L27/146 ,  H01L31/115

    CPC classification number: H01L27/14663 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14658 ,  H01L27/14676 ,  H01L31/1075 ,  H01L31/115

    Abstract: Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.

    Abstract translation: 公开了一种光检测器，其中限定半导体区域14的边缘的边界线BY被信号读取布线E3覆盖，并且在半导体区域14和信号读取布线E3之间配置电容器。 载波的高频分量峰值分量通过电容器迅速提取到外部，但是信号读取线E3覆盖边界线BY，使得边界线附近的半导体电位稳定并且输出信号稳定。

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