ULTRAVIOLET SENSOR AND ULTRAVIOLET DETECTING DEVICE
    1.
    发明申请
    ULTRAVIOLET SENSOR AND ULTRAVIOLET DETECTING DEVICE 有权
    超紫外线传感器和超紫外检测器件

    公开(公告)号:US20160086989A1

    公开(公告)日:2016-03-24

    申请号:US14855968

    申请日:2015-09-16

    Abstract: An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

    Abstract translation: 紫外线传感器包括具有多个第一像素区域和多个第二像素区域的硅光电二极管阵列。 除了每个第二像素区域之外,在每个第一像素区域上设置滤光膜以覆盖每个第一像素区域。 滤光膜降低紫外线区域的检测对象波长范围的透射率。 每个第一像素区域和每个第二像素区域中的每一个包括至少一个具有雪崩光电二极管以Geiger模式操作的像素,以及与雪崩光电二极管串联连接的淬灭电阻器。 多个第一像素区域中的每个淬火电阻器通过第一信号线连接到第一输出端子。 多个第二像素区域中的每个淬灭电阻器通过第二信号线连接到第二输出端子。

    OPTICAL SENSOR
    3.
    发明申请
    OPTICAL SENSOR 审中-公开
    光传感器

    公开(公告)号:US20170047470A1

    公开(公告)日:2017-02-16

    申请号:US15305371

    申请日:2015-04-23

    CPC classification number: H01L31/165 G01C2009/066 H01L31/02325 H01L33/60

    Abstract: An optical sensor includes: a light emitting element 40; a lower substrate 20 on which the light emitting element 40 is provided; an upper substrate 10 provided so that the light emitting element 40 is positioned between the upper substrate 10 and the lower substrate 20; and an optical block 30 provided on the upper substrate 10. The upper substrate 10 includes a division-type photodiode SD. The optical block 30 is configured to reflect light emitted from the light emitting element 40 toward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.

    Abstract translation: 光学传感器包括:发光元件40; 设置有发光元件40的下基板20; 设置为使得发光元件40位于上基板10和下基板20之间的上基板10; 以及设置在上基板10上的光学块30.上基板10包括分割型光电二极管SD。 光学块30被配置为将从发光元件40发射的光朝向测量对象R反射,并且由测量对象R反射的光入射到分割型光电二极管SD上。

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