公开(公告)号：US20180026145A1

公开(公告)日：2018-01-25

申请号：US15551099

申请日：2015-12-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shogo KAMAKURA ,  Ryuta YAMADA ,  Kenichi SATO

IPC: H01L31/02 ,  G01J1/02 ,  H01L23/00 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/107 ,  G01J1/44 ,  H01L27/144

CPC classification number: H01L31/02005 ,  G01J1/02 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/10 ,  H01L31/107 ,  H01L2224/05554 ,  H01L2224/32227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12043 ,  H01L2924/30105 ,  H04N5/369 ,  H01L2924/00014

Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

公开(公告)号：US20250113639A1

公开(公告)日：2025-04-03

申请号：US18834600

申请日：2023-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryuta YAMADA ,  Takuji OHTA

IPC: H10F39/00 ,  H10F30/225 ,  H10F39/10

Abstract: A photodetector includes a semiconductor photodetection element including a semiconductor layer having a first surface and a second surface, and a light-condensing structure disposed on the first surface. The semiconductor layer includes a plurality of photodetection units. The light-condensing structure includes a main body portion and a metal layer. The main body portion has a plurality of first openings arranged to correspond to the plurality of photodetection units, and includes a plurality of layers stacked on the first surface. The metal layer covers an inner surface of each of the plurality of first openings to expose a region corresponding to each of the plurality of first openings in a surface of the semiconductor photodetection element. A surface of the metal layer in each of the plurality of first openings has a shape that spreads out to a side opposite to the semiconductor photodetection element.

公开(公告)号：US20160086989A1

公开(公告)日：2016-03-24

申请号：US14855968

申请日：2015-09-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Koei YAMAMOTO ,  Kenzo HAYATSU ,  Terumasa NAGANO ,  Yuki OKUWA ,  Ryuta YAMADA

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/028

CPC classification number: H01L31/107 ,  H01L27/14603 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/028 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/16195 ,  H01L2924/00014

Abstract: An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

Abstract translation: 紫外线传感器包括具有多个第一像素区域和多个第二像素区域的硅光电二极管阵列。 除了每个第二像素区域之外，在每个第一像素区域上设置滤光膜以覆盖每个第一像素区域。 滤光膜降低紫外线区域的检测对象波长范围的透射率。 每个第一像素区域和每个第二像素区域中的每一个包括至少一个具有雪崩光电二极管以Geiger模式操作的像素，以及与雪崩光电二极管串联连接的淬灭电阻器。 多个第一像素区域中的每个淬火电阻器通过第一信号线连接到第一输出端子。 多个第二像素区域中的每个淬灭电阻器通过第二信号线连接到第二输出端子。