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    PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE
    2.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE 审中-公开

    公开(公告)号：US20190051767A1

    公开(公告)日：2019-02-14

    申请号：US16064165

    申请日：2016-12-12

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Shigeyuki NAKAMURA ,  Terumasa NAGANO ,  Kenichi SATO

    IPC: H01L31/02 ,  H01L31/107 ,  G01T1/24 ,  H03K23/78 ,  H04N5/378

    Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

    PHOTODIODE ARRAY
    6.
    发明申请
    PHOTODIODE ARRAY 有权
    光斑阵列

    公开(公告)号：US20140117484A1

    公开(公告)日：2014-05-01

    申请号：US13710845

    申请日：2012-12-11

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Koei YAMAMOTO ,  Terumasa NAGANO ,  Kazuhisa YAMAMURA ,  Kenichi SATO ,  Ryutaro TSUCHIYA

    IPC: H01L27/144

    CPC classification number: H01L27/1446 ,  H01L31/107

    Abstract: Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.

    Abstract translation: 每个光检测单元包括输出载体的半导体区域和表面电极。 在光电二极管阵列中，读线被定位在相邻的雪崩光电二极管之间。 当将包括半导体区域的表面的平面设定为基准面时，从基准面到读取线的距离tb大于从基准面到表面电极的距离。

    PHOTODIODE ARRAY
    7.
    发明申请
    PHOTODIODE ARRAY 审中-公开

    公开(公告)号：US20180331134A1

    公开(公告)日：2018-11-15

    申请号：US16040709

    申请日：2018-07-20

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuhisa YAMAMURA ,  Kenichi SATO

    IPC: H01L27/144 ,  H01L27/146 ,  H01L31/107 ,  H01L27/14

    CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

    Abstract: A photodiode array 1 has a plurality of photodetector channels 10 which are farmed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 fauns a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.

    PHOTODIODE ARRAY
    10.
    发明申请
    PHOTODIODE ARRAY 审中-公开
    光斑阵列

    公开(公告)号：US20170033137A1

    公开(公告)日：2017-02-02

    申请号：US15293784

    申请日：2016-10-14

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuhisa YAMAMURA ,  Kenichi SATO

    IPC: H01L27/144 ,  H01L31/107 ,  H01L27/146

    CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

    Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

    Abstract translation: 光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。 阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个 的光电检测器通道。

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