公开(公告)号：US20250093534A1

公开(公告)日：2025-03-20

申请号：US18725838

申请日：2022-11-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shogo KAMAKURA ,  Hayato NISHIMIYA ,  Shintaro KAMADA

IPC: G01T1/20

Abstract: The radiation detector includes a scintillator, first and second semiconductor photodetectors, a first wiring member electrically connected to the first semiconductor photodetector, and a second wiring member electrically connected to the second semiconductor photodetector. The scintillator includes a pair of end surfaces opposing each other in a first direction and first and second side surfaces opposing each other in a second direction intersecting the first direction, and has a rectangular shape when viewed in the first direction. The first and second side surfaces couple the pair of end surfaces. The first semiconductor photodetector includes a first semiconductor substrate disposed to oppose the first side surface. The second semiconductor photodetector includes a second semiconductor substrate disposed to oppose the second side surface.

公开(公告)号：US20250110247A1

公开(公告)日：2025-04-03

申请号：US18725840

申请日：2022-11-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shogo KAMAKURA ,  Hayato NISHIMIYA ,  Shintaro KAMADA

IPC: G01T1/20

Abstract: The radiation detector includes a scintillator, first and second semiconductor photodetectors, a first wiring member electrically connected to the first semiconductor photodetector, and a second wiring member electrically connected to the second semiconductor photodetector. The scintillator includes a pair of end surfaces opposing each other in a first direction and first and second side surfaces opposing each other in a second direction intersecting the first direction, and has a rectangular shape when viewed in the first direction. The first and second side surfaces couple the pair of end surfaces. The first semiconductor photodetector includes a first semiconductor substrate disposed to oppose the first side surface. The second semiconductor photodetector includes a second semiconductor substrate disposed to oppose the second side surface.

公开(公告)号：US20250123412A1

公开(公告)日：2025-04-17

申请号：US18693237

申请日：2022-08-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shogo KAMAKURA ,  Hayato NISHIMIYA ,  Shintaro KAMADA

IPC: G01T1/20

Abstract: A radiation detector includes: a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the end surfaces; a semiconductor photodetector including a semiconductor substrate; and a wiring member electrically connected to the semiconductor photodetector. A length of the scintillator in the first direction is longer than that of the scintillator in a second direction orthogonal to the one side surface. A length of the one side surface in the first direction is longer than a width of the one side surface in a third direction. The semiconductor substrate includes a plurality of photodetection regions disposed in a first portion and first electrodes and a second electrode disposed in a second portion. Each of the photodetection regions includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors.

公开(公告)号：US20240405052A1

公开(公告)日：2024-12-05

申请号：US18693211

申请日：2022-08-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shogo KAMAKURA ,  Hayato NISHIMIYA ,  Shintaro KAMADA

IPC: H01L27/146 ,  G01T1/20

Abstract: A radiation detector includes: a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the pair of end surfaces; and a semiconductor photodetector including a semiconductor substrate. A length of the scintillator in the first direction is longer than a length of the scintillator in a second direction orthogonal to the one side surface. A length of the one side surface in the first direction is longer than a width of the one side surface in a third direction orthogonal to the first direction and the second direction. The semiconductor substrate includes a photodetection region disposed in a first portion and a first electrode and a second electrode disposed in a second portion. The photodetection region includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors.

公开(公告)号：US20180026145A1

公开(公告)日：2018-01-25

申请号：US15551099

申请日：2015-12-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shogo KAMAKURA ,  Ryuta YAMADA ,  Kenichi SATO

IPC: H01L31/02 ,  G01J1/02 ,  H01L23/00 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/107 ,  G01J1/44 ,  H01L27/144

CPC classification number: H01L31/02005 ,  G01J1/02 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/10 ,  H01L31/107 ,  H01L2224/05554 ,  H01L2224/32227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12043 ,  H01L2924/30105 ,  H04N5/369 ,  H01L2924/00014

Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.