Invention Application
- Patent Title: SUBSTRATE DIVIDING METHOD
-
Application No.: US14984066Application Date: 2015-12-30
-
Publication No.: US20160111333A1Publication Date: 2016-04-21
- Inventor: Yoshimaro FUJII , Fumitsugu FUKUYO , Kenshi FUKUMITSU , Naoki UCHIYAMA
- Applicant: HAMAMATSU PHOTONICS K.K.
- Priority: JP2002-67289 20020312
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/304 ; H01L21/268

Abstract:
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
Public/Granted literature
- US09711405B2 Substrate dividing method Public/Granted day:2017-07-18
Information query
IPC分类: