-
公开(公告)号：US20140190933A1
公开(公告)日：2014-07-10
申请号：US13826658
申请日：2013-03-14
发明人： Sarin Deshpande , Sanjeev Aggarwal , Kerry Nagel
IPC分类号： G11B5/127
CPC分类号： G11B5/127 , G11C11/161 , H01L43/12 , Y10T29/49052
摘要： A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask.
摘要翻译： 制造基于磁阻的器件的方法包括对顶部电极蚀刻化学物质是惰性的并且在磁堆栈溅射期间具有低的溅射产率的金属硬掩模。 金属硬掩模由光致抗蚀剂构图，然后剥离光掩模，并且通过金属硬掩模对顶部电极（基于磁阻的装置的覆盖磁性材料）进行图案化。
-
2.发明授权公开(公告)号：US08877522B2
公开(公告)日：2014-11-04
申请号：US14283413
申请日：2014-05-21
IPC分类号： H01L21/00 , G11C11/00 , H01L43/12 , H01L21/768 , H01L27/22
CPC分类号： H01L43/12 , H01L21/76883 , H01L21/76898 , H01L23/544 , H01L27/222 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding dielectric material. This recess is repeated in subsequent processing steps, providing alignment marks for the formation of a magnetic tunnel junction. The magnetic tunnel junction may be offset from the first via, and a second via being formed above the magnetic tunnel junction and to a conductive layer.
摘要翻译： 提供了一种用于形成第一通孔的方法，其中导电材料例如铜形成在MRAM阵列的导电着陆焊盘上并耦合到MRAM阵列的导电着陆焊盘。 执行溅射步骤以将第一通孔的表面降低到低于周围电介质材料的表面。 在随后的处理步骤中重复该凹槽，提供用于形成磁性隧道结的对准标记。 磁性隧道结可以偏离第一通孔，并且第二通孔形成在磁性隧道结上方和导电层上。
-
公开(公告)号：US10600460B2
公开(公告)日：2020-03-24
申请号：US16157315
申请日：2018-10-11
摘要： Spin-orbit-torque (SOT) control strip lines are provided along the sides of free layers in perpendicular magnetic tunnel junction devices. Current flowing through such SOT control strip lines injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used to force the magnetic state of the free layer to a particular state based on the direction of the current through the SOT control strip line. In other embodiments, the SOT provides an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction. Some embodiments have dedicated strip lines for a single magnetic tunnel junction such that a three-terminal device results. Other embodiments have multiple magnetic tunnel junctions sharing a strip line, where the strip line can be used to reset all of the magnetic tunnel junctions to the same state and can also be used as an assist such that individual magnetic tunnel junctions can be written using selection circuitry.
-
公开(公告)号：US20150380640A1
公开(公告)日：2015-12-31
申请号：US14845697
申请日：2015-09-04
发明人： Sarin Deshpande , Sanjeev Aggarwal
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G11B5/84 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A method of manufacturing a magnetoresistive-based device using a plurality of hard masks. The magnetoresistive-based device includes magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer. In one embodiment, the method may include removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively, and removing the tunnel barrier layer and the second magnetic materials layer unprotected by a second hard mask to form a tunnel barrier and second magnetic materials, and the second electrically conductive layer unprotected by the second hard mask to form, and a second electrode.
摘要翻译： 使用多个硬掩模制造基于磁阻的装置的方法。 基于磁阻的器件包括在第一导电层和第二导电层之间形成的磁性材料层，所述磁性材料层包括在第一磁性材料层和第二磁性材料层之间形成的隧道势垒层。 在一个实施例中，该方法可以包括移除未被第一硬掩模保护的第一导电层和第一磁性材料层，以分别形成第一电极和第一磁性材料，并且去除隧道势垒层和第二磁性层 材料层不被第二硬掩模保护以形成隧道势垒和第二磁性材料，以及由第二硬掩模未被保护以形成的第二导电层和第二电极。
-
公开(公告)号：US20150079699A1
公开(公告)日：2015-03-19
申请号：US14532797
申请日：2014-11-04
发明人： Sarin Deshpande , Sanjeev Aggarwal , Kerry Nagel
IPC分类号： H01L43/12
CPC分类号： G11B5/127 , G11C11/161 , H01L43/12 , Y10T29/49052
摘要： A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask.
摘要翻译： 制造基于磁阻的器件的方法包括对顶部电极蚀刻化学物质是惰性的并且在磁堆栈溅射期间具有低的溅射产率的金属硬掩模。 金属硬掩模由光致抗蚀剂构图，然后剥离光掩模，并且通过金属硬掩模对顶部电极（基于磁阻的装置的覆盖磁性材料）进行图案化。
-
6.发明申请公开(公告)号：US20140287536A1
公开(公告)日：2014-09-25
申请号：US14283413
申请日：2014-05-21
IPC分类号： H01L43/12 , H01L21/768
CPC分类号： H01L43/12 , H01L21/76883 , H01L21/76898 , H01L23/544 , H01L27/222 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding dielectric material. This recess is repeated in subsequent processing steps, providing alignment marks for the formation of a magnetic tunnel junction. The magnetic tunnel junction may be offset from the first via, and a second via being formed above the magnetic tunnel junction and to a conductive layer.
摘要翻译： 提供了一种用于形成第一通孔的方法，其中导电材料例如铜形成在MRAM阵列的导电着陆焊盘上并耦合到MRAM阵列的导电着陆焊盘。 执行溅射步骤以将第一通孔的表面降低到低于周围电介质材料的表面。 在随后的处理步骤中重复该凹槽，提供用于形成磁性隧道结的对准标记。 磁性隧道结可以偏离第一通孔，并且第二通孔形成在磁性隧道结上方和导电层上。
-
公开(公告)号：US12022738B2
公开(公告)日：2024-06-25
申请号：US17270151
申请日：2019-08-22
发明人： Sanjeev Aggarwal , Sarin Deshpande , Kerry Nagel , Santosh Karre
CPC分类号： H10N50/01 , H10N50/80 , H01F10/3254 , H01F10/3272 , H10B61/00
摘要： Fabrication of a magnetic memory element, including a via (125) in an interlevel dielectric layer (120), providing an electrical connection between an underlying metal region (110) and a magnetoresistive stack device, such as a magnetic tunnel junction (150), involves forming a transition metal layer (130) in the via by atomic layer deposition. The via optionally includes a tantalum-rich layer (140) above, and/or a cap layer (115) below, the transition metal layer, and may have a diameter less than or equal than a diameter of the magnetoresistive stack device.
-
公开(公告)号：US11937436B2
公开(公告)日：2024-03-19
申请号：US17285122
申请日：2019-10-29
发明人： Jijun Sun , Han-Jong Chia , Sarin Deshpande , Ahmet Demiray
CPC分类号： H10B61/10 , H10B61/00 , H10B61/20 , H10N30/50 , H10N35/80 , H10N50/10 , H10N50/80 , H10N50/85
摘要： A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.
-
公开(公告)号：US09023219B2
公开(公告)日：2015-05-05
申请号：US13826658
申请日：2013-03-14
发明人： Sarin Deshpande , Sanjeev Aggarwal , Kerry Nagel
CPC分类号： G11B5/127 , G11C11/161 , H01L43/12 , Y10T29/49052
摘要： A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask.
摘要翻译： 制造基于磁阻的器件的方法包括对顶部电极蚀刻化学物质是惰性的并且在磁堆栈溅射期间具有低的溅射产率的金属硬掩模。 金属硬掩模由光致抗蚀剂构图，然后剥离光掩模，并且通过金属硬掩模对顶部电极（基于磁阻的装置的覆盖磁性材料）进行图案化。
-
公开(公告)号：US08790935B1
公开(公告)日：2014-07-29
申请号：US13801419
申请日：2013-03-13
CPC分类号： H01L43/12 , H01L21/76883 , H01L21/76898 , H01L23/544 , H01L27/222 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding dielectric material. This recess is repeated in subsequent processing steps, providing alignment marks for the formation of a magnetic tunnel junction. The magnetic tunnel junction may be offset from the first via, and a second via being formed above the magnetic tunnel junction and to a conductive layer.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.017 秒)
