公开(公告)号：US20130207730A1

公开(公告)日：2013-08-15

申请号：US13743667

申请日：2013-01-17

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jongmin LEE ,  Byoung-Gue Min ,  Seong-Il Kim ,  Hyung Sup Yoon ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H03H7/38 ,  H01G7/00 ,  H03F3/21

CPC classification number: H01L21/8222 ,  H01G7/00 ,  H01L27/0647 ,  H01L27/0658 ,  H01L29/93 ,  H03F1/565 ,  H03F3/21 ,  H03F2200/36 ,  H03F2200/378 ,  H03F2200/387 ,  H03F2200/391 ,  H03H7/38 ,  Y10T29/43

Abstract: Disclosed is an impedance matching circuit capable of wideband matching. The impedance matching circuit includes: a first variable inductor unit of which one end is connected to the first node and an inductance value varies; a second inductor unit connected between the first node and a second node and having a variable inductance value; a first variable capacitor unit of which one end is connected to the first node and a capacitance value varies; and a second variable capacitor unit of which one end is connected to the second node and a capacitance value varies, and the other end of the first variable capacitor unit and the other end of the second variable capacitor unit are connected to a ground voltage terminal to perform the impedance matching between a circuit connected to the other end of the first variable inductor unit and a circuit connected to the second node.

Abstract translation: 公开了能够进行宽带匹配的阻抗匹配电路。 阻抗匹配电路包括：第一可变电感器单元，其一端连接到第一节点，电感值变化; 连接在第一节点和第二节点之间并具有可变电感值的第二电感器单元; 第一可变电容器单元，其一端连接到第一节点，电容值变化; 以及第二可变电容器单元，其一端连接到第二节点并且电容值变化，并且第一可变电容器单元的另一端和第二可变电容器单元的另一端连接到接地电压端子 执行连接到第一可变电感器单元的另一端的电路与连接到第二节点的电路之间的阻抗匹配。

公开(公告)号：US20190103483A1

公开(公告)日：2019-04-04

申请号：US16137235

申请日：2018-09-20

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hokyun AHN ,  Min Jeong SHIN ,  Jeong Jin KIM ,  Hae Cheon KIM ,  Jae Won DO ,  Byoung-Gue MIN ,  Hyung Sup YOON ,  Hyung Seok LEE ,  Jong-Won LIM ,  Sungjae CHANG ,  Hyunwook JUNG ,  Kyu Jun CHO ,  Dong Min KANG ,  Dong-Young KIM ,  SEONG-IL KIM ,  Sang-Heung LEE ,  Jongmin LEE ,  Hong Gu JI

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/45 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/3065

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

公开(公告)号：US20190081166A1

公开(公告)日：2019-03-14

申请号：US16028612

申请日：2018-07-06

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jae Won DO ,  Dong Min KANG ,  Dong-Young KIM ,  SEONG-IL KIM ,  Hae Cheon KIM ,  Byoung-Gue MIN ,  Min Jeong SHIN ,  Hokyun AHN ,  Hyung Sup YOON ,  Sang-Heung LEE ,  Jongmin LEE ,  Jong-Won LIM ,  Sungjae CHANG ,  Yoo Jin JANG ,  Hyunwook JUNG ,  Kyu Jun CHO ,  Hong Gu JI

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/205

Abstract: Provided is a gate-all-around device. The gate-all-around device includes a substrate, a pair of heterojunction source/drain regions provided on the substrate, a heterojunction channel region provided between the pair of heterojunction source/drain regions, and a pair of ohmic electrodes provided on the pair of heterojunction source/drain regions, respectively. Each of the pair of heterojunction source/drain regions includes a pair of two-dimensional electron gas layers. The pair of ohmic electrodes extends toward an upper surface of the substrate and pass through the pair of heterojunction source/drain regions, respectively.

公开(公告)号：US20140152338A1

公开(公告)日：2014-06-05

申请号：US13950939

申请日：2013-07-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jongmin LEE ,  Byoung-Gue Min ,  Chull Won Ju

IPC: G01R31/26

CPC classification number: G01R31/2608 ,  G01R31/2621 ,  G01R31/2632

Abstract: Provided is a low-cost and high-efficient system for measuring reliability of an electronic device. According to the present invention, a single input power source for applying power to an input terminal of a plurality of electronic device samples and a single output power source for applying power to an output terminal of the plurality of electronic device samples are provided. Further, an input switch having first switches of which the number corresponds to the number of the plurality of electronic device samples, the input switch being installed between the input power source and the input terminal so that the first switches are selectively switched to apply input power; and an output switch having second switches of which the number corresponds to the number of the plurality of electronic device samples, the output switch being installed between the output power source and the output terminal so that the second switches are selectively switched to apply output power are provided.

Abstract translation: 提供了用于测量电子设备的可靠性的低成本和高效率的系统。 根据本发明，提供了用于向多个电子设备样本的输入端施加电力的单个输入电源和用于向多个电子设备样本的输出端施加电力的单个输出电源。 此外，具有第一开关的输入开关，其数量对应于多个电子设备样本的数量，输入开关安装在输入电源和输入端子之间，使得第一开关被选择性地切换以施加输入功率 ; 以及具有第二开关的输出开关，其数量对应于多个电子设备样本的数量，输出开关安装在输出电源和输出端子之间，使得第二开关选择性地切换以施加输出功率 提供。

公开(公告)号：US20210083632A1

公开(公告)日：2021-03-18

申请号：US16941691

申请日：2020-07-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Woojin CHANG ,  SEONG-IL KIM ,  Sang-Heung LEE ,  Jongmin LEE

IPC: H03F1/56 ,  H03F3/19 ,  H03G3/30

Abstract: Provided is an amplification circuit for amplifying an input signal. The amplification circuit includes an input stage including an input matching circuit that receives the input signal and an input attenuation circuit that attenuates a gain for the input signal outside an operating frequency band of the amplification circuit, a transistor that amplifies the input signal provided from the input stage, and an output stage including an output matching circuit that receives a signal amplified by the transistor and an output attenuation circuit that attenuates the gain for the input signal outside the operating frequency band of the amplification circuit, and the input attenuation circuit includes a first resistor and a second resistor that are connected to a ground voltage, a first passive element connected between the input matching circuit and the second resistor, and a second passive element connected between the first passive element and the first resistor.

公开(公告)号：US20160020147A1

公开(公告)日：2016-01-21

申请号：US14862123

申请日：2015-09-22

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jongmin LEE ,  Byoung-Gue MIN ,  Seong-il KIM ,  Hyung Sup YOON ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC: H01L21/8222 ,  H01L27/06

CPC classification number: H01L21/8222 ,  H01G7/00 ,  H01L27/0647 ,  H01L27/0658 ,  H01L29/93 ,  H03F1/565 ,  H03F3/21 ,  H03F2200/36 ,  H03F2200/378 ,  H03F2200/387 ,  H03F2200/391 ,  H03H7/38 ,  Y10T29/43

Abstract: A manufacturing method for a variable capacitor includes forming a first element of which a capacitance value depends on a voltage applied to both of two terminals of a first area on a substrate, forming a second element having a capacitance value fixed to a second area on the substrate adjacent to the first area, and forming metallic wires for connecting the first element and the second element and connecting the first element and the second element with the outside. The first element maybe a bipolar transistor that may include a diode. The second element maybe a capacitor that includes a dielectric.

Abstract translation: 一种可变电容器的制造方法，包括：形成电容值取决于施加到基板上的第一区域的两端的电压的第一元件，形成具有固定在第二区域上的电容值的第二元件 基板，与第一区域相邻，并且形成用于连接第一元件和第二元件的金属线，并且将第一元件和第二元件与外部连接。 第一个元件可以是可以包括二极管的双极晶体管。 第二元件可以是包括电介质的电容器。