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    TERAHERTZ HEALTH CHECKER
    4.
    发明申请
    TERAHERTZ HEALTH CHECKER 审中-公开
    TERAHERTZ健康检查员

    公开(公告)号：US20140198195A1

    公开(公告)日：2014-07-17

    申请号：US14156804

    申请日：2014-01-16

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Dong Suk JUN ,  Seok-Hwan MOON ,  In-Kyu YOU ,  Jae Ick CHOI

    IPC: H04N5/33

    CPC classification number: H04N5/2258 ,  H04N5/332

    Abstract: Provided is a terahertz health checker. The terahertz health checker includes a terahertz wave transmitter generating terahertz waves in a terahertz band, a lens outputting the terahertz waves and receiving terahertz waves reflected from the outputted terahertz waves, an imaging chip connected to the lens, detecting the received terahertz waves, and generating a digital image signal based on the detected terahertz waves, a readout circuit reading out the digital image signal, and a transceiver outputting the read-out digital image signal to the outside.

    Abstract translation: 提供了一个太赫兹健康检查器。 太赫兹健康检查器包括在太赫兹波段中产生太赫兹波的太赫兹波发射器，输出太赫兹波并接收从输出的太赫兹波反射的太赫兹波的透镜，连接到透镜的成像芯片，检测接收到的太赫兹波，并产生 基于检测到的太赫兹波的数字图像信号，读出数字图像信号的读出电路和将读出的数字图像信号输出到外部的收发器。

    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    转印薄膜晶体管及其制造方法

    公开(公告)号：US20130161704A1

    公开(公告)日：2013-06-27

    申请号：US13775280

    申请日：2013-02-25

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Jae Bon Koo ,  Jong-Hyun AHN ,  Seung Youl KANG ,  Hasan MUSARRAT ,  In-Kyu YOU ,  Kyoung Ik CHO

    IPC: H01L29/04

    CPC classification number: H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    Abstract: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    Abstract translation: 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    METHOD OF MANUFACTURING ELECTRODE AND METHOD OF MANUFACTURING CAPACITOR INCLUDING ELECTRODE FORMED THEREBY
    7.
    发明申请
    METHOD OF MANUFACTURING ELECTRODE AND METHOD OF MANUFACTURING CAPACITOR INCLUDING ELECTRODE FORMED THEREBY 审中-公开
    制造电极的方法和制造电容器的方法，包括形成电极的电极

    公开(公告)号：US20160217939A1

    公开(公告)日：2016-07-28

    申请号：US15007757

    申请日：2016-01-27

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Ho-Gyeong YUN ,  In-Kyu YOU

    IPC: H01G13/00

    CPC classification number: H01G11/86 ,  H01G11/32 ,  Y02E60/13

    Abstract: Provided are a method of manufacturing an electrode and a method of manufacturing a capacitor using the electrode. According to an embodiment of the inventive concept, provided is a method of manufacturing an electrode including forming stacked graphene films on a first substrate, separating the graphene films from the first substrate, cutting the graphene films to form graphene electrode parts, and transferring the graphene electrode parts to a second substrate, in which the graphene electrode parts cross a top surface of the second substrate.

    Abstract translation: 提供一种制造电极的方法和使用该电极制造电容器的方法。 根据本发明构思的一个实施例，提供了一种制造电极的方法，包括在第一衬底上形成层叠的石墨烯膜，将石墨烯膜与第一衬底分离，切割石墨烯膜以形成石墨烯电极部分，并转移石墨烯 电极部件到第二基板，其中石墨烯电极部分与第二基板的顶表面交叉。

    ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME
    8.
    发明申请
    ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME 有权
    用于大面积打印的主动夹层及其制造方法及使用其的印刷方法

    公开(公告)号：US20150273833A1

    公开(公告)日：2015-10-01

    申请号：US14738047

    申请日：2015-06-12

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Yong Suk YANG ,  In-Kyu YOU ,  Soon-Won JUNG ,  Bock Soon NA ,  Seok-Hwan MOON

    IPC: B41J2/16

    CPC classification number: B41J2/1626 ,  B41J2/06 ,  B41J2/14 ,  B41J2/16 ,  B41J2/162 ,  B41J2/1621 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/04

    Abstract: Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes.

    Abstract translation: 提供了一种大面积纳米级活性印刷装置及其制造方法，以及使用其的印刷方法。 打印装置可以包括基板，沿着第一方向延伸的第一互连线，在基板上，设置在第一互连线上的具有部分地暴露第一互连线的孔的层间电介质层，邻近孔的第二互连线 所述层间电介质层与所述第一互连线交叉，以及设置在与所述第一和第二互连线交叉并与所述第一互连线连接的楔形电极。 楔形电极在孔的中心向上突出。

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