公开(公告)号：US08558311B2

公开(公告)日：2013-10-15

申请号：US11761534

申请日：2007-06-12

Applicant: Robert S. Dubrow ,  Jeffrey Miller ,  David P. Stumbo

Inventor： Robert S. Dubrow ,  Jeffrey Miller ,  David P. Stumbo

IPC: H01L29/72

CPC classification number: H01B7/0009 ,  B82Y99/00 ,  H01B3/004 ,  H01G4/018 ,  H01G4/20 ,  Y10T428/249924

Abstract: A dielectric material is disclosed comprising a plurality of substantially longitudinally oriented wires which are coupled together, wherein each of the wires includes a conductive core comprising a first material and one or more insulating shell layers comprising a compositionally different second material disposed about the core. In one embodiment, a dielectric layer is disclosed comprising a substrate comprising an insulating material having a plurality of nanoscale pores defined therein having a pore diameter less than about 100 nm, and a conductive material disposed within the nanoscale pores. Methods are also disclosed to create a dielectric material layer comprising, for example, providing a plurality of wires, wherein each of the wires includes a core comprising a first material and one or more insulating layers comprising a compositionally different second material disposed about the core; substantially longitudinally orienting said plurality of wires along their long axes; coupling the wires together; and depositing an insulating coating on at least one of a top and/or a bottom end of the wires.

Abstract translation: 公开了一种介电材料，其包括耦合在一起的多个基本上纵向定向的导线，其中每个导线包括导电芯，该导电芯包括第一材料和一个或多个绝缘壳层，所述绝缘壳层包括围绕芯布置的组成不同的第二材料。 在一个实施例中，公开了一种介电层，其包括基底，该基底包括绝缘材料，该绝缘材料具有限定在其中的孔径小于约100nm的多个纳米级孔，以及设置在纳米尺度孔内的导电材料。 还公开了形成电介质材料层的方法，该电介质材料层包括例如提供多条电线，其中每条电线包括包含第一材料和一个或多个绝缘层的芯，该绝缘层包括围绕芯设置的组成不同的第二材料; 沿其长轴基本纵向地定向所述多根电线; 将电线连接在一起; 以及在所述电线的顶端和/或底端中的至少一个上沉积绝缘涂层。

公开(公告)号：US20120135158A1

公开(公告)日：2012-05-31

申请号：US13322117

申请日：2010-05-25

Applicant: Erik Freer ,  James M. Hamilton ,  David P. Stumbo ,  Kenji Komiya ,  Akihide Shibata

Inventor： Erik Freer ,  James M. Hamilton ,  David P. Stumbo ,  Kenji Komiya ,  Akihide Shibata

IPC: B05D5/00 ,  B05C9/12 ,  B05D3/14 ,  B82Y30/00

CPC classification number: C25D13/02 ,  B82Y10/00 ,  B82Y40/00 ,  C25D13/22 ,  C25D17/12 ,  H01L21/02603 ,  H01L21/326 ,  H01L21/67703 ,  H01L29/0665 ,  H01L29/0673 ,  Y10S977/89 ,  Y10S977/936

Abstract: Methods, systems, and apparatuses for nanowire deposition are provided. A deposition system includes an enclosed flow channel, an inlet port, and an electrical signal source. The inlet port provides a suspension that includes nanowires into the channel. The electrical signal source is coupled to an electrode pair in the channel to generate an electric field to associate at least one nanowire from the suspension with the electrode pair. The deposition system may include various further features, including being configured to receive multiple solution types, having various electrode geometries, having a rotatable flow channel, having additional electrical conductors, and further aspects.

Abstract translation: 提供了纳米线沉积的方法，系统和装置。 沉积系统包括封闭的流动通道，入口端口和电信号源。 入口端口提供了包括纳米线进入通道的悬浮液。 电信号源耦合到通道中的电极对以产生电场，以将至少一个来自悬架的纳米线与电极对相关联。 沉积系统可以包括各种其它特征，包括被配置为接收具有各种电极几何形状的多种溶液类型，具有可旋转的流动通道，具有附加的电导体以及其它方面。

公开(公告)号：US20110284380A1

公开(公告)日：2011-11-24

申请号：US13113680

申请日：2011-05-23

Applicant: Samuel MARTIN ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X.Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

Inventor： Samuel MARTIN ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X.Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC: C25D15/00 ,  B82Y30/00

CPC classification number: H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Abstract translation: 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US07745498B2

公开(公告)日：2010-06-29

申请号：US11399307

申请日：2006-04-06

Applicant: Cheri X. Y. Pereira ,  Francesco Lemmi ,  David P. Stumbo

Inventor： Cheri X. Y. Pereira ,  Francesco Lemmi ,  David P. Stumbo

IPC: B01F3/12

CPC classification number: C30B33/005 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/06 ,  C30B29/08 ,  C30B29/40 ,  C30B29/48 ,  C30B29/602 ,  H01L31/022466 ,  Y10T428/24372 ,  Y10T428/24405 ,  Y10T428/249921

Abstract: Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.

Abstract translation: 公开了纳米线分散体组合物（及其用途），其包含悬浮在包含至少一种低分子量和/或低HLB（亲水亲油平衡值）分散剂的水性或非水溶液中的多种无机纳米线。 在水性或非水溶液中分散纳米线之前，进一步提高多种无机纳米线在水溶液或非水溶液中的分散性的方法包括例如氧化纳米线的表面。

公开(公告)号：US07569503B2

公开(公告)日：2009-08-04

申请号：US11271488

申请日：2005-11-10

Applicant: Yaoling Pan ,  David P. Stumbo

Inventor： Yaoling Pan ,  David P. Stumbo

IPC: H01L21/00

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7606 ,  H01L29/78696 ,  Y10S977/901 ,  Y10S977/963

Abstract: Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

Abstract translation: 提供本发明的实施例用于改进的接触掺杂和退火系统和工艺。 在实施例中，等离子体离子浸没注入（PIII）工艺用于纳米线和其它基于纳米元件的薄膜器件的接触掺杂。 根据本发明的另外的实施例，使用使用低于约100mJ / cm 2（例如，小于约50mJ / cm 2，例如约2至18mJ / cm 2）的相对低的激​​光能量密度的激光能量的脉冲激光退火 以在基底上退火纳米线和其它基于纳米元件的器件，例如低温柔性衬底，例如塑料衬底。

公开(公告)号：US20080128688A1

公开(公告)日：2008-06-05

申请号：US12016701

申请日：2008-01-18

Applicant: Yaoling Pan ,  Francisco Leon ,  David P. Stumbo

Inventor： Yaoling Pan ,  Francisco Leon ,  David P. Stumbo

IPC: H01L51/05

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0541 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/4266 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764

Abstract: The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; depositing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; depositing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; depositing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones of the source and drain regions.

Abstract translation: 本发明涉及使用并入和/或设置在导电聚合物层附近的纳米线（或诸如纳米带，纳米管等的其它纳米结构）的薄膜晶体管，以及用于生产这种晶体管的生产可扩展方法。 特别地，公开了包含导电聚合材料如聚苯胺（PANI）或聚吡咯（PPY）和一个或多个纳米线的复合材料，其中并入其中。 还提供了几种纳米线TFT制造方法，其在一个示例性实施例中包括提供器件衬底; 在器件衬底上沉积第一导电聚合物材料层; 限定所述导电聚合物层中的一个或多个栅极接触区域; 在所述导电聚合物层上以足够的纳米线密度沉积多个纳米线以实现工作电流水平; 在所述多个纳米线上沉积第二导电聚合物材料层; 以及在所述第二导电聚合物材料层中形成源极和漏极接触区域，从而提供与所述多个纳米线的电连接性，由此所述纳米线形成在所述源极和漏极区域中的相应长度之间具有长度的沟道。

公开(公告)号：US07365395B2

公开(公告)日：2008-04-29

申请号：US11203432

申请日：2005-08-15

Applicant: David P. Stumbo ,  Stephen A. Empedocles ,  Francisco Leon ,  J. Wallace Parce

Inventor： David P. Stumbo ,  Stephen A. Empedocles ,  Francisco Leon ,  J. Wallace Parce

IPC: H01L29/72

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01L29/0673 ,  H01L29/4908 ,  H01L51/0537 ,  Y10S977/743 ,  Y10S977/745 ,  Y10S977/762 ,  Y10S977/813 ,  Y10S977/936

Abstract: Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).

Abstract translation: 公开了使用纳米结构的人造电介质，例如纳米线。 在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。 人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。 使用纳米结构的人造电介质可以实现非常高的介电常数。 可以通过改变纳米结构的长度，直径，载流子密度，形状，纵横比，取向和密度来调节介电常数。 此外，公开了使用纳米结构的可控人造电介质，例如纳米线，其中可以通过向可控人造电介质施加电场来动态地调整介电常数。 各种电子器件可以使用具有纳米结构的人造电介质来提高性能。 示例性器件包括电容器，薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其它类型的滤波器以及雷达衰减材料（RAM）。

公开(公告)号：US07339184B2

公开(公告)日：2008-03-04

申请号：US11117707

申请日：2005-04-29

Applicant: Linda T. Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Stephen A. Empedocles ,  Jay L. Goldman ,  James M. Hamilton ,  David L. Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik C. Scher ,  David P. Stumbo ,  Jeffery A. Whiteford

Inventor： Linda T. Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Stephen A. Empedocles ,  Jay L. Goldman ,  James M. Hamilton ,  David L. Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik C. Scher ,  David P. Stumbo ,  Jeffery A. Whiteford

IPC: H01L29/00

CPC classification number: C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract translation: 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US5632909A

公开(公告)日：1997-05-27

申请号：US491824

申请日：1995-06-19

Applicant: Donald E. Allen ,  Philip P. Kwan ,  David P. Stumbo

Inventor： Donald E. Allen ,  Philip P. Kwan ,  David P. Stumbo

IPC: H03H3/08 ,  H03H9/64 ,  B44C1/22

CPC classification number: H03H9/6483 ,  H03H9/6423 ,  H03H3/08

Abstract: A full duplex radio having improved properties is obtained by using asymmetric surface acoustic wave (SAW) filters, the filters are composed of series and parallel coupled SAW resonators. Asymmetry is obtained by covering either of the series or parallel resonators of each filter with a dielectric layer to increase the SAW coupling coefficient of the covered resonators relative to the uncovered resonators. The filters are desirably in pairs arranged with mirror image frequency asymmetry such that the steeper skirts of the frequency response are adjacent. Greater pass-bandwidths can be obtained without adverse affect on transmitter and receiver isolation.

Abstract translation: 通过使用非对称表面声波（SAW）滤波器获得具有改进性能的全双工无线电，滤波器由串联和并联耦合的SAW谐振器组成。 通过用介电层覆盖每个滤波器的串联或并联谐振器中的任一个来获得不对称性，以增加覆盖的谐振器相对于未覆盖谐振器的SAW耦合系数。 滤波器期望成对布置成具有镜像频率不对称性，使得频率响应的较陡的裙部相邻。 可以获得更大的通带宽度，而不会对发射机和接收机隔离造成不利影响。

公开(公告)号：US08999851B2

公开(公告)日：2015-04-07

申请号：US12331150

申请日：2008-12-09

Applicant: Francisco Leon ,  Francesco Lemmi ,  Jeffrey Miller ,  David Dutton ,  David P. Stumbo

Inventor： Francisco Leon ,  Francesco Lemmi ,  Jeffrey Miller ,  David Dutton ,  David P. Stumbo

IPC: H01L21/302 ,  H01L29/06 ,  B81C1/00 ,  B82Y10/00 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/0665 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66772 ,  H01L29/775 ,  H01L29/78603 ,  H01L29/78696

Abstract: The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

Abstract translation: 本发明涉及形成衬底元件的方法，包括诸如纳米线，晶体管和其它结构的半导体元件，以及由这些方法形成的元件。