Molecular self-assembly in substrate processing
    1.
    发明申请
    Molecular self-assembly in substrate processing 有权
    基板加工中的分子自组装

    公开(公告)号:US20060108320A1

    公开(公告)日:2006-05-25

    申请号:US11284572

    申请日:2005-11-22

    IPC分类号: H01L21/302 C23F1/00

    摘要: Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled layer is formed on an exposed surface of the dielectric material. The molecularly self-assembled layer includes material(s) having a molecular characteristic and/or a molecular type that includes one or more of a molecular characteristic and/or a molecular type of a head group of molecules of the material, a molecular characteristic and/or a molecular type of a terminal group of molecules of the material, and a molecular characteristic and/or a molecular type of a linking group of molecules of the material. The molecular characteristic(s) and molecular type(s) are selected according to at least one pre-specified property of the molecularly self-assembled layer.

    摘要翻译: 提供了分子自组装的系统和方法。 分子自组装接收包括电介质材料的一个或多个区域的衬底。 在介电材料的暴露表面上形成分子自组装层。 分子自组装层包括具有分子特征和/或分子类型的材料,其包括材料分子的头基团的分子特征和/或分子类型中的一种或多种,​​分子特征和 /或分子类型的材料的分子的末端基团,以及材料分子的连接基团的分子特征和/或分子类型。 分子特征和分子类型根据分子自组装层的至少一个预先确定的性质来选择。

    Methods for discretized processing of regions of a substrate
    3.
    发明申请
    Methods for discretized processing of regions of a substrate 有权
    离子处理基板区域的方法

    公开(公告)号:US20070082487A1

    公开(公告)日:2007-04-12

    申请号:US11352016

    申请日:2006-02-10

    IPC分类号: H01L21/44

    摘要: The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

    摘要翻译: 本发明提供了用于基板区域的离散化,组合处理的方法和系统,例如用于集成电路制造中使用的新材料,工艺和工艺顺序集成方案的发现,实现,优化和鉴定。 通过将材料输送到衬底或修改衬底的区域来处理其上具有差分处理区域阵列的衬底。

    Processing substrates using site-isolated processing
    4.
    发明申请
    Processing substrates using site-isolated processing 有权
    使用现场隔离处理处理衬底

    公开(公告)号:US20060292845A1

    公开(公告)日:2006-12-28

    申请号:US11418689

    申请日:2006-05-05

    IPC分类号: C23C16/00 H01L21/44

    摘要: Substrate processing systems and methods are described for processing substrates having two or more regions. The processing includes one or more of molecular self-assembly and combinatorial processing. At least one of materials, processes, processing conditions, material application sequences, and process sequences is different for the processing in at least one region of the substrate relative to at least one other region of the substrate. Processing systems are described that include numerous processing modules. The modules include a site-isolated reactor (SIR) configured for one or more of molecular self-assembly and combinatorial processing of a substrate.

    摘要翻译: 描述了用于处理具有两个或更多个区域的基板的基板处理系统和方法。 该处理包括分子自组装和组合处理中的一种或多种。 材料,工艺,加工条件,材料应用顺序和工艺顺序中的至少一个不同于衬底相对于衬底的至少一个其它区域的至少一个区域中的处理。 描述了包括许多处理模块的处理系统。 模块包括配置用于衬底的分子自组装和组合处理中的一个或多个的位点隔离反应器(SIR)。

    Substrate processing using molecular self-assembly
    6.
    发明申请
    Substrate processing using molecular self-assembly 审中-公开
    使用分子自组装的基板加工

    公开(公告)号:US20060060301A1

    公开(公告)日:2006-03-23

    申请号:US11231047

    申请日:2005-09-19

    IPC分类号: H01L21/306 C23F1/00

    摘要: A system for molecular self-assembly referred to herein as a “molecular self-assembly system (MSAS)” includes at least one interface configured to receive at least one substrate. The MSAS also includes at least one molecular self-assembly module coupled to the interface. The MSAS can also include one or more of pre-processing modules, other molecular self-assembly processing modules, and post-processing modules, and may include any number, combination, and/or type of other modules. Each module of the MSAS can contain at least one of a number of different processes as appropriate to a processing configuration of the MSAS. The MSAS also includes at least one handler coupled to the interface and configured to move the substrate between the interface and one or more of the modules.

    摘要翻译: 本文中称为“分子自组装系统(MSAS)”的分子自组装系统包括至少一个接口,其被配置为接收至少一个衬底。 MSAS还包括耦合到该界面的至少一个分子自组装模块。 MSAS还可以包括一个或多个预处理模块,其他分子自组装处理模块和后处理模块,并且可以包括其他模块的任何数量,组合和/或类型。 MSAS的每个模块可以包含适合于MSAS的处理配置的多个不同进程中的至少一个。 MSAS还包括至少一个处理器,其耦合到接口并且被配置为在接口和一个或多个模块之间移动衬底。

    METHOD AND APPARATUS FOR COMBINATORIALLY VARYING MATERIALS, UNIT PROCESS AND PROCESS SEQUENCE
    7.
    发明申请
    METHOD AND APPARATUS FOR COMBINATORIALLY VARYING MATERIALS, UNIT PROCESS AND PROCESS SEQUENCE 审中-公开
    用于组合变化材料的方法和装置,单元过程和过程序列

    公开(公告)号:US20070202614A1

    公开(公告)日:2007-08-30

    申请号:US11674132

    申请日:2007-02-12

    IPC分类号: H01L21/66

    摘要: A method for analyzing and optimizing fabrication techniques using variations of materials, unit processes, and process sequences is provided. In the method, a subset of a semiconductor manufacturing process sequence and build is analyzed for optimization. During the execution of the subset of the manufacturing process sequence, the materials, unit processes, and process sequence for creating a certain structure is varied. During the combinatorial processing, the materials, unit processes, or process sequence is varied between the discrete regions of a semiconductor substrate, wherein within each of the regions the process yields a substantially uniform or consistent result that is representative of a result of a commercial manufacturing operation. A tool for optimizing a process sequence is also provided.

    摘要翻译: 提供了一种使用材料,单元过程和工艺顺序的变化来分析和优化制造技术的方法。 在该方法中,分析半导体制造过程序列和构建的子集以进行优化。 在执行制造过程序列的子集期间,用于创建特定结构的材料,单元过程和过程顺序是变化的。 在组合处理期间,材料,单元工艺或工艺顺序在半导体衬底的离散区域之间变化,其中在每个区域内,该工艺产生基本均匀或一致的结果,其代表商业制造的结果 操作。 还提供了用于优化处理顺序的工具。

    Methods for discretized formation of masking and capping layers on a substrate
    9.
    发明申请
    Methods for discretized formation of masking and capping layers on a substrate 有权
    在衬底上离散形成掩蔽层和覆盖层的方法

    公开(公告)号:US20070082485A1

    公开(公告)日:2007-04-12

    申请号:US11352083

    申请日:2006-02-10

    IPC分类号: H01L21/44

    摘要: The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

    摘要翻译: 本发明提供了用于基板区域的离散化,组合处理的方法和系统,例如用于集成电路制造中使用的新材料,工艺和工艺顺序集成方案的发现,实现,优化和鉴定。 通过将材料输送到衬底或修改衬底的区域来处理其上具有差分处理区域阵列的衬底。

    Combinatorial evaluation of dry semiconductor processes
    10.
    发明授权
    Combinatorial evaluation of dry semiconductor processes 有权
    干式半导体工艺组合评估

    公开(公告)号:US08647466B2

    公开(公告)日:2014-02-11

    申请号:US13095443

    申请日:2011-04-27

    申请人: Tony Chiang

    发明人: Tony Chiang

    IPC分类号: H01L21/306

    CPC分类号: H01L22/20

    摘要: Combinatorial evaluation of dry semiconductor processes is described, including rotating a mask comprising a plurality of apertures, wherein the mask is positioned between a dry semiconductor processing source and the substrate, and performing a dry semiconductor process through the apertures of the mask at a plurality of intervals during the rotating the mask to combinatorially create a plurality of processed regions on the substrate, wherein the apertures of the mask are arranged in such a way that the plurality of processed regions have different geometries relative to the processing source, and analyzing the processed regions to determine effects of time and geometry on the processed regions.

    摘要翻译: 描述了干式半导体工艺的组合评估,包括旋转包括多个孔的掩模,其中掩模位于干燥半导体处理源和衬底之间,并且通过多个掩模的掩模的孔径执行干燥半导体工艺 在旋转掩模期间的间隔以组合地在基底上产生多个经处理的区域,其中掩模的孔以这样的方式排列,使得多个经处理的区域相对于处理源具有不同的几何形状,并且分析处理区域 以确定时间和几何对处理区域的影响。