-
1.发明授权Interconnect structure containing non-damaged dielectric and a via gouging feature 失效互连结构包含未损坏的电介质和通孔沟槽功能公开(公告)号：US08664766B2
公开(公告)日：2014-03-04
申请号：US12430436
申请日：2009-04-27
IPC分类号： H01L23/48
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31105 , H01L21/31144 , H01L21/32131 , H01L21/76805 , H01L21/76808 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76873 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a gouging feature at the bottom of one of the via openings. The structure includes an upper interconnect level including a second dielectric material having at least one conductively filled via and an overlying conductively filled line disposed therein. The conductively filled via is in contact with an exposed surface of the at least one conductive feature of a first interconnect level by an anchoring area. The conductively filled via is separated from the second dielectric material by a first diffusion barrier layer, and the conductively filled line is separated from the second dielectric material by a second continuous diffusion barrier layer thereby the second dielectric material includes no damaged regions in areas adjacent to the conductively filled line.
摘要翻译： 一种互连结构，包括在一个通孔开口的底部的气流特征。 该结构包括上部互连层，其包括具有至少一个导电填充通孔的第二电介质材料和布置在其中的上覆导电填充线。 导电填充的通孔通过锚固区域与第一互连水平的至少一个导电特征的暴露表面接触。 通过第一扩散阻挡层将导电填充的通孔与第二介电材料分离，并且通过第二连续扩散阻挡层将导电填充线与第二介电材料分离，由此第二介电材料在邻近的区域中不包括受损区域 导线填充线。
-
2.发明申请STRUCTURE AND METHOD FOR CREATING RELIABLE VIA CONTACTS FOR INTERCONNECT APPLICATIONS 有权用于创建可靠联系的互连应用的结构和方法公开(公告)号：US20090298280A1
公开(公告)日：2009-12-03
申请号：US12538772
申请日：2009-08-10
IPC分类号： H01L21/768
CPC分类号： H01L21/76834 , H01L21/288 , H01L21/76814 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76852 , H01L2924/0002 , H01L2924/00
摘要： A reliable and mechanical strong interconnect structure is provided that does not include gouging features in the bottom of the an opening, particularly at a via bottom. Instead, the interconnect structures of the present invention utilize a Co-containing buffer layer that is selectively deposited on exposed surfaces of the conductive features that are located in a lower interconnect level. The selective deposition is performed through at least one opening that is present in a dielectric material of an upper interconnect level. The selective deposition is performed by electroplating or electroless plating. The Co-containing buffer layer comprises Co and at least one of P and B. W may optionally be also present in the Co-containing buffer layer.
摘要翻译： 提供了可靠和机械强的互连结构，其不包括开口底部的特别是在通孔底部的气泡特征。 相反，本发明的互连结构利用选择性地沉积在位于较低互连级别的导电特征的暴露表面上的含Co缓冲层。 选择性沉积通过存在于上部互连电平的电介质材料中的至少一个开口进行。 选择性沉积通过电镀或无电镀进行。 含Co缓冲层包含Co和P和B中的至少一个.W可选地也可以存在于含Co缓冲层中。
-
公开(公告)号：US07800228B2
公开(公告)日：2010-09-21
申请号：US11435410
申请日：2006-05-17
IPC分类号： H01L23/52
CPC分类号： H01L21/76834 , H01L21/288 , H01L21/76814 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76852 , H01L2924/0002 , H01L2924/00
摘要： A reliable and mechanical strong interconnect structure is provided that does not include gouging features in the bottom of the an opening, particularly at a via bottom. Instead, the interconnect structures of the present invention utilize a Co-containing buffer layer that is selectively deposited on exposed surfaces of the conductive features that are located in a lower interconnect level. The selective deposition is performed through at least one opening that is present in a dielectric material of an upper interconnect level. The selective deposition is performed by electroplating or electroless plating. The Co-containing buffer layer comprises Co and at least one of P and B. W may optionally be also present in the Co-containing buffer layer.
摘要翻译： 提供了可靠和机械强的互连结构，其不包括开口底部的特别是在通孔底部的气泡特征。 相反，本发明的互连结构利用选择性地沉积在位于较低互连级别的导电特征的暴露表面上的含Co缓冲层。 选择性沉积通过存在于上部互连电平的电介质材料中的至少一个开口进行。 选择性沉积通过电镀或无电镀进行。 含Co缓冲层包含Co和P和B中的至少一个.W可选地也可以存在于含Co缓冲层中。
-
公开(公告)号：US20090206485A1
公开(公告)日：2009-08-20
申请号：US12430436
申请日：2009-04-27
IPC分类号： H01L23/532 , H01L23/48
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31105 , H01L21/31144 , H01L21/32131 , H01L21/76805 , H01L21/76808 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76873 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of forming the interconnect structure does not disrupt the coverage of the deposited diffusion barrier in the overlying line opening, nor does it introduce damages caused by Ar sputtering into the dielectric material including the via and line openings. In accordance with the present invention, such an interconnect structure contains a diffusion barrier layer only within the via opening, but not in the overlying line opening. This feature enhances both mechanical strength and diffusion property around the via opening areas without decreasing volume fraction of conductor inside the line openings. In accordance with the present invention, such an interconnect structure is achieved by providing the gouging feature in the bottom of the via opening prior to formation of the line opening and deposition of the diffusion barrier in said line opening.
摘要翻译： 提供一种互连结构，其包括在一个通孔开口的底部的气泡特征及其形成方法。 根据本发明，形成互连结构的方法不会破坏上覆线路开口中沉积的扩散阻挡层的覆盖，也不会引起由Ar溅射引起的包括通孔和线路开口的电介质材料的损伤。 根据本发明，这种互连结构仅在通孔开口内包含扩散阻挡层，但不包括在上覆开口中。 该特征增强了通孔开口区域周围的机械强度和扩散性能，而不会降低线路开口内导体的体积分数。 根据本发明，这种互连结构是通过在形成线路开口和在所述线路开口中的扩散阻挡层的沉积之前提供通孔开口的底部中的气流特征来实现的。
-
5.发明授权Structure and method for creating reliable via contacts for interconnect applications 有权用于为互连应用创建可靠的通孔触点的结构和方法公开(公告)号：US07960274B2
公开(公告)日：2011-06-14
申请号：US12538772
申请日：2009-08-10
IPC分类号： H01L21/768
CPC分类号： H01L21/76834 , H01L21/288 , H01L21/76814 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76852 , H01L2924/0002 , H01L2924/00
摘要： A reliable and mechanical strong interconnect structure is provided that does not include gouging features in the bottom of the an opening, particularly at a via bottom. Instead, the interconnect structures of the present invention utilize a Co-containing buffer layer that is selectively deposited on exposed surfaces of the conductive features that are located in a lower interconnect level. The selective deposition is performed through at least one opening that is present in a dielectric material of an upper interconnect level. The selective deposition is performed by electroplating or electroless plating. The Co-containing buffer layer comprises Co and at least one of P and B. W may optionally be also present in the Co-containing buffer layer.
摘要翻译： 提供了可靠和机械强的互连结构，其不包括开口底部的特别是在通孔底部的气泡特征。 相反，本发明的互连结构利用选择性地沉积在位于较低互连级别的导电特征的暴露表面上的含Co缓冲层。 选择性沉积通过存在于上部互连电平的电介质材料中的至少一个开口进行。 选择性沉积通过电镀或无电镀进行。 含Co缓冲层包含Co和P和B中的至少一个.W可选地也可以存在于含Co缓冲层中。
-
公开(公告)号：US07528066B2
公开(公告)日：2009-05-05
申请号：US11364953
申请日：2006-03-01
IPC分类号： H01L21/311 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31105 , H01L21/31144 , H01L21/32131 , H01L21/76805 , H01L21/76808 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76873 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a gouging feature at the bottom of one of the via openings and a method of forming the same are provided. In accordance with the present invention, the method of forming the interconnect structure does not disrupt the coverage of the deposited diffusion barrier in the overlying line opening, nor does it introduce damages caused by Ar sputtering into the dielectric material including the via and line openings. In accordance with the present invention, such an interconnect structure contains a diffusion barrier layer only within the via opening, but not in the overlying line opening. This feature enhances both mechanical strength and diffusion property around the via opening areas without decreasing volume fraction of conductor inside the line openings. In accordance with the present invention, such an interconnect structure is achieved by providing the gouging feature in the bottom of the via opening prior to formation of the line opening and deposition of the diffusion barrier in said line opening.
摘要翻译： 提供一种互连结构，其包括在一个通孔开口的底部的气泡特征及其形成方法。 根据本发明，形成互连结构的方法不会破坏上覆线路开口中沉积的扩散阻挡层的覆盖，也不会引起由Ar溅射引起的包括通孔和线路开口的电介质材料的损伤。 根据本发明，这种互连结构仅在通孔开口内包含扩散阻挡层，但不包括在上覆开口中。 该特征增强了通孔开口区域周围的机械强度和扩散性能，而不会降低线路开口内导体的体积分数。 根据本发明，这种互连结构是通过在形成线路开口和在所述线路开口中的扩散阻挡层的沉积之前提供通孔开口的底部中的气流特征来实现的。
-
公开(公告)号：US09620619B2
公开(公告)日：2017-04-11
申请号：US13348894
申请日：2012-01-12
申请人： Veeraraghavan S. Basker , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
发明人： Veeraraghavan S. Basker , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
IPC分类号： H01L21/20 , H01L29/78 , H01L29/66 , H01L21/768 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/76897 , H01L29/66628 , H01L29/78
摘要： A borderless contact structure or partially borderless contact structure and methods of manufacture are disclosed. The method includes forming a gate structure and a space within the gate structure, defined by spacers. The method further includes blanket depositing a sealing material in the space, over the gate structure and on a semiconductor material. The method further includes removing the sealing material from over the gate structure and on the semiconductor material, leaving the sealing material within the space. The method further includes forming an interlevel dielectric material over the gate structure. The method further includes patterning the interlevel dielectric material to form an opening exposing the semiconductor material and a portion of the gate structure. The method further includes forming a contact in the opening formed in the interlevel dielectric material.
-
公开(公告)号：US09059254B2
公开(公告)日：2015-06-16
申请号：US13604660
申请日：2012-09-06
IPC分类号： H01L21/44 , H01L21/768 , H01L21/311
CPC分类号： H01L23/528 , H01L21/31144 , H01L21/76807 , H01L21/76816 , H01L21/76831 , H01L23/5226 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： A method is provided that includes first etching a substrate according to a first mask. The first etching forms a first etch feature in the substrate to a first depth. The first etching also forms a sliver opening in the substrate. The sliver opening may then be filled with a fill material. A second mask may be formed by removing a portion of the first mask. The substrate exposed by the second mask may be etched with a second etch, in which the second etching is selective to the fill material. The second etching extends the first etch feature to a second depth that is greater than the first depth, and the second etch forms a second etch feature. The first etch feature and the second etch feature may then be filled with a conductive metal.
摘要翻译： 提供了一种方法，其包括首先根据第一掩模蚀刻衬底。 第一蚀刻在衬底中形成第一深度的第一蚀刻特征。 第一蚀刻还在衬底中形成条条开口。 然后可以用填充材料填充条子开口。 可以通过去除第一掩模的一部分来形成第二掩模。 可以用第二蚀刻蚀刻由第二掩模曝光的衬底，其中第二蚀刻对填充材料是选择性的。 第二蚀刻将第一蚀刻特征扩展到大于第一深度的第二深度，并且第二蚀刻形成第二蚀刻特征。 然后可以用导电金属填充第一蚀刻特征和第二蚀刻特征。
-
公开(公告)号：US08957519B2
公开(公告)日：2015-02-17
申请号：US12910075
申请日：2010-10-22
申请人： Chih-Chao Yang , Hsueh-Chung Chen
发明人： Chih-Chao Yang , Hsueh-Chung Chen
IPC分类号： H01L23/48 , H01L21/321 , H01L21/02 , H01L21/768
CPC分类号： H01L21/321 , H01L21/02304 , H01L21/76852 , H01L21/76886
摘要： The problem of poor adherence of a dielectric coating on a patterned metal structure can be solved by forming an adhesion layer on exposed surfaces of such metal structure prior to deposition of such dielectric. According to an embodiment, the invention provides a method to form a self-aligned adhesion layer on the surface of metal interconnect structure within an integrated circuit by exposing the metal structure to a controlled atmosphere and a flow of nitrogen-containing gas.
摘要翻译： 可以通过在沉积这种电介质之前在这种金属结构的暴露表面上形成粘合层来解决图案化金属结构上的电介质涂层粘附性差的问题。 根据一个实施例，本发明提供了一种通过将金属结构暴露于受控气氛和含氮气体的流动来在集成电路内的金属互连结构的表面上形成自对准粘附层的方法。
-
10.发明授权Discontinuous/non-uniform metal cap structure and process for interconnect integration 有权不连续/不均匀的金属帽结构和互连整合的过程公开(公告)号：US08889546B2
公开(公告)日：2014-11-18
申请号：US13600773
申请日：2012-08-31
申请人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
发明人： Chih-Chao Yang , Lynne M. Gignac , Chao-Kun Hu , Surbhi Mittal
IPC分类号： H01L21/4763 , H01L23/532 , H01L23/528 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.
摘要翻译： 提供一种制造互连结构的方法，其包括提供具有约3.0或更小介电常数的介电材料和嵌入其中的至少一种导电材料，所述至少一种导电材料具有与上表面共面的上表面 的介电材料; 并且在所述至少一种导电材料的上表面上直接形成含贵金属的帽，其中所述贵金属帽是不连续的或不均匀的。
-
-
-
-
-
-
-
-
-
搜索结果
586 条记录 (耗时 0.032 秒)
