摘要:
The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value (19) in a diffraction angle range from 33 to 35.5°; and completing the thin film.
摘要:
An infrared light detector having a sensor chip (4), which includes a thin-film element (5) made from a pyroelectrically sensitive material, having an electrical insulator (27), at least one electronic component (17, 18) having a thin-film design, which forms part of a readout electronics unit, and a thin-film membrane (2), on which the sensor chip (4) and the electronic component (17, 18) are mounted side by side in an integrated manner such that the electronic component (17, 18) is electrically conductively coupled to the thin-film element (5). A signal amplifier (22), with which, in co-operation with the electronic component (17, 18), an electrical signal emitted from the sensor chip (4) can be amplified, can be connected to the electronic component (17, 18).
摘要:
An infrared light detector has a first substrate having a sensor chip thereon that has an exposure surface that can be irradiated with infrared light, the sensor chip converting the incident infrared light into an electrical signal. The infrared light detector also has a second substrate having a window therein that is located adjacent to the exposure surface of the sensor chip, the window masking infrared light of a predetermined wavelength. The size (dimensions) of the window and the distance of the window with respect to the exposure surface are dimensioned to cause infrared light passing through the window to completely strike the exposure area of the sensor chip.
摘要:
A method of removing an organic, preferably polymeric, light-emitting material (4) from defined areas of a substrate (1) comprises the steps of arranging a shadow mask (5) to overlie the organic material other than in the defined areas, and applying a beam of ions (7) to the defined areas through the mask. The method is useful in forming organic light-emitting diode arrays.
摘要:
An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
摘要:
A device to detect thermal radiation has a membrane and at least two detector elements that are respectively set up to transduce thermal radiation into an electrical signal and are mounted situated next to one another on the membrane, wherein at least one heat dissipation path is provided on the side of the membrane facing towards the detector elements and/or on the side of the membrane facing away from the detector elements, which heat dissipation path has a higher heat conductivity than the membrane and is connected with the detector elements in a heat-conductive manner via the membrane so that heat can be discharged from the detector elements with the heat dissipation path, whereby the response time of the detector elements is short; and wherein at least one heat barrier that has a lower heat conductivity than the membrane and extends between the detector elements is provided integrated into the membrane, such that a heat conduction in the membrane from the one detector element to the other detector element is prevented by the heat barrier; whereby the crosstalk of the detector elements is low.
摘要:
In a device for the detection of thermal radiation which and a method for production of such a device, a stack is formed with at least one detector support having at least one detector element for the conversion of the thermal radiation into an electric signal, at least one circuit support with at least one read-out circuit for reading out the electrical signal and at least one cover to shield the detector element, wherein the detector support and the cover are so arranged with respect to one another that a first stack cavity bounded by the detector support and the cover is provided between the detector element of the detector support and the cover and that the circuit support and the detector support are so arranged with respect to one another that at least one second stack cavity bounded by the circuit support and the detector support is provided between detector support and the circuit support and that the first hollow stack support and/or the second stack cavity is evacuated or can be evacuated. Preferably, the detector support, circuit support and cover are made of silicon. The manufacturing operation takes place at wafer-level. Functionalized silicon-substrates are stacked upon one another, firmly bonded together and subsequently sub-divided. Preferably, the detector elements are pyro-electric detector elements. The device finds application in motion detector, presence reporters and thermal-image cameras.
摘要:
A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
摘要:
An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).
摘要:
In a device for detecting thermal radiation, at least one membrane is provided on which at least one thermal detector element is mounted for the conversion of the thermal radiation into an electric signal and at least one circuit support for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being connected together electrically by an electric contact which passes through the membrane. In addition, a method of producing the device with the following method steps is provided: a) provision of the membrane with the detector element and of at least one electrical through-connection and provision of the circuit support and b) bringing together the membrane and the circuit support in such a manner that the detector element and the readout circuit are connected together electrically by an electrical contact passing through the membrane. Production activity is preferably carried out at wafer level: functionalised silicon substrates are stacked upon one another, firmly bonded to one another and then divided into individual elements. Preferably, the detector elements comprise of pyro-electrical detector elements. The device finds application in motion detectors, presence detectors and in thermal imaging cameras.