公开(公告)号：US20170271171A1

公开(公告)日：2017-09-21

申请号：US15321537

申请日：2016-03-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyong Lu ,  Chunping Long ,  Chien Hung Liu ,  Yucheng Chan ,  Xiaolong Li ,  Zheng Liu

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/3212 ,  B81C2201/0121 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/30625 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/32139 ,  H01L21/48 ,  H01L21/7684

Abstract: Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.

公开(公告)号：US20170141135A1

公开(公告)日：2017-05-18

申请号：US15107070

申请日：2016-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yueping Zuo ,  Chien Hung Liu ,  Liangjian Li ,  Yinghai Ma

IPC: H01L27/12

CPC classification number: H01L27/1266

Abstract: The present application discloses a method of fabricating a display apparatus, comprising providing a carrier substrate comprising a base substrate and an adhesive layer over the base substrate, wherein the base substrate comprises a plurality of fluid passages between the base substrate and the adhesive layer, and a plurality of fluid inlets connected with the plurality of fluid passages; forming a product substrate on a side of the adhesive layer distal to the base substrate; dispensing a detaching agent through the plurality of fluid inlets to the plurality of fluid passages, and contacting the detaching agent with the adhesive layer through the plurality of fluid passages; and detaching the product substrate from the carrier substrate.

公开(公告)号：US10367073B2

公开(公告)日：2019-07-30

申请号：US15820594

申请日：2017-11-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chien Hung Liu

IPC: H01L29/423 ,  H01L29/786 ,  H01L21/265 ,  H01L29/49 ,  H01L21/28 ,  H01L29/66 ,  H01L21/266

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a display device are provided. The TFT includes: a base substrate; a gate electrode and a gate insulating layer, disposed on the base substrate; and an active layer, wherein the gate insulating layer is disposed between the active layer and the gate electrode; the active layer includes a channel region and a doped region disposed on at least one side of the channel region; and the gate insulating layer is provided with a protrusion which is disposed between the doped region and the gate electrode.

公开(公告)号：US09634043B2

公开(公告)日：2017-04-25

申请号：US14436563

申请日：2014-09-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunping Long ,  Jang Soon Im ,  Chien Hung Liu

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L21/77 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L27/1288 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13625 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/77 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

Abstract: An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate patterning the metal film by one patterning process, and forming patterns of a gate electrode a source electrode, a drain electrode a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion, a pixel electrode and a bridge structure.

公开(公告)号：US10651211B2

公开(公告)日：2020-05-12

申请号：US15309949

申请日：2016-04-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zuqiang Wang ,  Chien Hung Liu

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786

Abstract: A thin film transistor and a preparation method thereof, an array substrate and a display apparatus are provided. The preparation method includes an operation of forming a low temperature poly silicon active layer; a substrate has a first region and a second region; and the step includes: forming a buffer layer on the first region and the second region of the substrate, the buffer layer having a thickness at a portion corresponding to the first region greater than that at a portion corresponding to the second region; or, forming the buffer layer on the first region of the substrate; forming an amorphous silicon layer on the buffer layer; performing laser crystallization processing on the amorphous silicon layer so as to convert the amorphous silicon layer into a poly silicon layer; and removing the poly silicon layer on the second region, and forming the low temperature poly silicon active layer on the first region.

公开(公告)号：US10446410B2

公开(公告)日：2019-10-15

申请号：US15321537

申请日：2016-03-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyong Lu ,  Chunping Long ,  Chien Hung Liu ,  Yucheng Chan ,  Xiaolong Li ,  Zheng Liu

IPC: H01L21/321 ,  H01L21/306 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/48

Abstract: Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.

公开(公告)号：US09887213B2

公开(公告)日：2018-02-06

申请号：US15125786

申请日：2015-08-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Zuqiang Wang ,  Chien Hung Liu ,  Yu Cheng Chan ,  Lujiang Huangfu

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675

Abstract: The present disclosure provides a method for forming an active layer with a pattern. The method includes forming an amorphous silicon layer and forming a function layer on the amorphous silicon layer. The function layer has a same pattern as the active layer. The method further includes performing a crystallization process for converting the amorphous silicon layer to a poly-silicon layer. The poly-silicon layer has first portions covered by the function layer and second portions not covered by the function layer, and grain sizes of the poly-silicon in the first portions are larger than grain sizes of the poly-silicon in the second portions.

公开(公告)号：US09818775B2

公开(公告)日：2017-11-14

申请号：US15443028

申请日：2017-02-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Chunping Long ,  Jang Soon Im ,  Chien Hung Liu

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L27/1288 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13625 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/77 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

Abstract: An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate; patterning the metal film by one patterning process, and forming patterns of a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion (214), a pixel electrode and a bridge structure. The manufacturing method can reduce the number of the patterning processes.

公开(公告)号：US09589991B2

公开(公告)日：2017-03-07

申请号：US14769180

申请日：2014-12-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zuqiang Wang ,  Chien Hung Liu

IPC: H01L21/31 ,  H01L23/58 ,  H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/06 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/786

Abstract: A thin-film transistor (TFT), a manufacturing method thereof, display substrate and a display device are disclosed. The TFT includes: an active layer, gate insulating layer, gate electrode, interlayer dielectric layer, source electrode and a drain electrode disposed on a base substrate in sequence. The source electrode and drain electrode are respectively connected with the active layer via a through hole exposing the active layer; the gate insulating layer at least includes a silicon oxide layer and a silicon nitride layer in a two-layer structure; the interlayer dielectric layer at least includes silicon oxide layers and silicon nitride layers in a four-layer structure; the silicon oxide layers and silicon nitride layers of the gate insulating layer and the interlayer dielectric layer are alternately arranged; and the dimension of one side of the through hole away from the base substrate is greater than that of one side close to the base substrate.

Abstract translation: 公开了薄膜晶体管（TFT），其制造方法，显示基板和显示装置。 TFT包括：有源层，栅极绝缘层，栅电极，层间介质层，源电极和漏电极，依次设置在基底基板上。 源电极和漏极分别通过暴露有源层的通孔与有源层连接; 栅极绝缘层至少包括二层结构的氧化硅层和氮化硅层; 层间绝缘层至少包括四层结构的氧化硅层和氮化硅层; 栅极绝缘层和层间电介质层的氧化硅层和氮化硅层交替排列; 并且通孔的远离基底的一侧的尺寸大于靠近基底的一侧的尺寸。

公开(公告)号：US10096663B2

公开(公告)日：2018-10-09

申请号：US14785777

申请日：2015-03-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Xiaoyong Lu ,  Xiaolong Li ,  Chien Hung Liu ,  Chunping Long

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The manufacturing method of the array substrate comprises: forming a first conductive thin film (100) on a base substrate (1); and patterning the first conductive thin film (100), to form a pattern of a cathode (11) on a first region (11) of the base substrate (1), and form a pattern of a gate electrode (4) on a second region (12) of the base substrate (1). Complexity and process time of a fabrication process of an array substrate can be reduced, a fabrication process of an organic electroluminescent panel can be simplified, and production cost can be reduced, by forming a cathode layer of a light-emitting diode and a gate electrode layer of a thin film transistor in different regions of the base substrate at the same time by one patterning process.