Invention Grant
- Patent Title: Thin film transistor (TFT) with structured gate insulator
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Application No.: US15820594Application Date: 2017-11-22
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Publication No.: US10367073B2Publication Date: 2019-07-30
- Inventor: Chien Hung Liu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201710236997 20170412
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/786 ; H01L21/265 ; H01L29/49 ; H01L21/28 ; H01L29/66 ; H01L21/266

Abstract:
A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a display device are provided. The TFT includes: a base substrate; a gate electrode and a gate insulating layer, disposed on the base substrate; and an active layer, wherein the gate insulating layer is disposed between the active layer and the gate electrode; the active layer includes a channel region and a doped region disposed on at least one side of the channel region; and the gate insulating layer is provided with a protrusion which is disposed between the doped region and the gate electrode.
Public/Granted literature
- US20180301565A1 THIN-FILM TRANSISTOR (TFT), MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2018-10-18
Information query
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