公开(公告)号：US11699570B1

公开(公告)日：2023-07-11

申请号：US17665970

申请日：2022-02-07

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Wei Zou ,  Hans-Joachim L. Gossmann ,  Qintao Zhang ,  Aseem Kumar Srivastava ,  William Robert Bogiages, Jr. ,  Wei Zhao

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31705

Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

公开(公告)号：US20240203743A1

公开(公告)日：2024-06-20

申请号：US18084670

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Cao-Minh Vincent Lu ,  Ana Cristina Gomez Herrero ,  Hans-Joachim Ludwig Gossmann ,  Wei Zou ,  Andrew Michael Waite

IPC: H01L21/302 ,  C23C14/04 ,  C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/02 ,  H01L21/266 ,  H01L21/311

CPC classification number: H01L21/302 ,  C23C14/042 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/0223 ,  H01L21/266 ,  H01L21/31111

Abstract: A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.

公开(公告)号：US12247283B2

公开(公告)日：2025-03-11

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: H01L29/06 ,  C23C14/48 ,  C23C14/54 ,  H01J37/304 ,  H01J37/317

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20230016122A1

公开(公告)日：2023-01-19

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: C23C14/54 ,  H01J37/304 ,  C23C14/48 ,  H01J37/317 ,  H01L29/06

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US11315790B2

公开(公告)日：2022-04-26

申请号：US16660417

申请日：2019-10-22

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Christopher R. Hatem

IPC: H01L21/223 ,  H01L21/265 ,  H01L21/02 ,  H01J37/317

Abstract: A method may include providing a substrate in a plasma chamber, the substrate comprising a monocrystalline semiconductor, having an upper surface. The method may include initiating a plasma in the plasma chamber, the plasma comprising an amorphizing ion species, and applying a pulse routine to the substrate, the pulse routine comprising a plurality of extraction voltage pulses, wherein a plurality of ion pulses are directed to the substrate, and wherein an ion dose per pulse is greater than a threshold for low dose amorphization.