公开(公告)号：US12247283B2

公开(公告)日：2025-03-11

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: H01L29/06 ,  C23C14/48 ,  C23C14/54 ,  H01J37/304 ,  H01J37/317

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20230016122A1

公开(公告)日：2023-01-19

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: C23C14/54 ,  H01J37/304 ,  C23C14/48 ,  H01J37/317 ,  H01L29/06

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20220344171A1

公开(公告)日：2022-10-27

申请号：US17396101

申请日：2021-08-06

Applicant: Applied Materials, Inc.

Inventor： Sony Varghese ,  Pradeep Subrahmanyan ,  Dennis Rodier ,  Kyuha Shim

IPC: H01L21/3115 ,  H01L21/66 ,  H01J37/317 ,  H01J37/304 ,  H01J37/147

Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.

公开(公告)号：US20250140569A1

公开(公告)日：2025-05-01

申请号：US19007772

申请日：2025-01-02

Applicant: Applied Materials, Inc.

Inventor： Sony Varghese ,  Pradeep Subrahmanyan ,  Dennis Rodier ,  Kyuha Shim

IPC: H01L21/3115 ,  H01J37/147 ,  H01J37/304 ,  H01J37/317 ,  H01L21/66

Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.

公开(公告)号：US12217974B2

公开(公告)日：2025-02-04

申请号：US17396101

申请日：2021-08-06

Applicant: Applied Materials, Inc.

Inventor： Sony Varghese ,  Pradeep Subrahmanyan ,  Dennis Rodier ,  Kyuha Shim

IPC: H01L21/3115 ,  H01J37/147 ,  H01J37/304 ,  H01J37/317 ,  H01L21/66

Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.