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1.发明授权公开(公告)号：US10670393B1
公开(公告)日：2020-06-02
申请号：US16206246
申请日：2018-11-30
Applicant: Applied Materials, Inc.
Inventor： Pradeep Subrahmanyan
Abstract: The methods and systems disclosed here leverage currently available reliable top down imaging techniques used by SEMs and use computational methods to synthesize accurate 3D profiles of features of high aspect ratio structures in a device. Radial cross-sectional profiles obtained from different locations along the lateral direction at different heights/depths are stitched together to create one composite 3D profile of the HAR feature.
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公开(公告)号：US20220344171A1
公开(公告)日：2022-10-27
申请号：US17396101
申请日：2021-08-06
Applicant: Applied Materials, Inc.
Inventor： Sony Varghese , Pradeep Subrahmanyan , Dennis Rodier , Kyuha Shim
IPC: H01L21/3115 , H01L21/66 , H01J37/317 , H01J37/304 , H01J37/147
Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.
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3.发明申请公开(公告)号：US20200271442A1
公开(公告)日：2020-08-27
申请号：US16872611
申请日：2020-05-12
Applicant: Applied Materials, Inc.
Inventor： Pradeep Subrahmanyan
Abstract: The methods and systems disclosed here detect edges of top-down images of respective cross-sections of an array of high-aspect-ratio (HAR) features. The respective cross sections are at various depths of a HAR feature along a longitudinal direction. The detected edges are re-sampled in a spatial domain at a target angular resolution. The re-sampled edges are represented as a corresponding set of harmonics in a frequency domain, each set of harmonics preserving characteristic information about a respective cross-section of the HAR feature at a certain depth. A plurality of cross-sections at the various depths of the HAR feature are reconstructed by analyzing the corresponding sets of harmonics in the frequency domain. A 3D profile of the HAR feature is generated by stitching the plurality of re-constructed cross-sections at the various depths of the HAR feature.
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公开(公告)号：US20250140569A1
公开(公告)日：2025-05-01
申请号：US19007772
申请日：2025-01-02
Applicant: Applied Materials, Inc.
Inventor： Sony Varghese , Pradeep Subrahmanyan , Dennis Rodier , Kyuha Shim
IPC: H01L21/3115 , H01J37/147 , H01J37/304 , H01J37/317 , H01L21/66
Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.
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Patent Agency Ranking
公开(公告)号：US12217974B2
公开(公告)日：2025-02-04
申请号：US17396101
申请日：2021-08-06
Applicant: Applied Materials, Inc.
Inventor： Sony Varghese , Pradeep Subrahmanyan , Dennis Rodier , Kyuha Shim
IPC: H01L21/3115 , H01J37/147 , H01J37/304 , H01J37/317 , H01L21/66
Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.
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6.发明公开公开(公告)号：US20230369014A1
公开(公告)日：2023-11-16
申请号：US18144836
申请日：2023-05-08
Applicant: Applied Materials, Inc.
Inventor： Pradeep Subrahmanyan
IPC: H01J37/304 , H01J37/317
CPC classification number: H01J37/304 , H01J37/3172 , H01J2237/20214 , H01J2237/30483
Abstract: A method may include generating a residual curvature map for a substrate, the residual curvature map being based upon a measurement of the substrate. The method may include generating a dose map based upon the residual curvature map, the dose map being for processing the substrate using a patterning energy source. The method may include applying the dose map to process the substrate using the patterning energy source, wherein the dose map is applied by performing a plurality of exposures of the substrate to the patterning energy source, at a plurality of different twist angles.
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公开(公告)号：US20230367941A1
公开(公告)日：2023-11-16
申请号：US18144832
申请日：2023-05-08
Applicant: Applied Materials, Inc.
Inventor： Pradeep Subrahmanyan
IPC: G06F30/39 , H01L21/02 , H01L21/66 , G06F119/18
CPC classification number: G06F30/39 , H01L21/02354 , H01L21/02351 , H01L21/02164 , H01L22/12 , H01L21/0214 , G06F2119/18
Abstract: A method may include generating a residual curvature map for a substrate, the residual curvature map being based upon a measurement of a surface of the substrate. The method may include generating a dose map based upon the residual curvature map, the dose map being for processing the substrate using a patterning energy source; and applying the dose map to process the substrate using the patterning energy source.
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8.发明授权公开(公告)号：US11092433B2
公开(公告)日：2021-08-17
申请号：US16872611
申请日：2020-05-12
Applicant: Applied Materials, Inc.
Inventor： Pradeep Subrahmanyan
Abstract: The methods and systems disclosed here detect edges of top-down images of respective cross-sections of an array of high-aspect-ratio (HAR) features. The respective cross sections are at various depths of a HAR feature along a longitudinal direction. The detected edges are re-sampled in a spatial domain at a target angular resolution. The re-sampled edges are represented as a corresponding set of harmonics in a frequency domain, each set of harmonics preserving characteristic information about a respective cross-section of the HAR feature at a certain depth. A plurality of cross-sections at the various depths of the HAR feature are reconstructed by analyzing the corresponding sets of harmonics in the frequency domain. A 3D profile of the HAR feature is generated by stitching the plurality of re-constructed cross-sections at the various depths of the HAR feature.
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9.发明申请公开(公告)号：US20200173772A1
公开(公告)日：2020-06-04
申请号：US16206246
申请日：2018-11-30
Applicant: Applied Materials, Inc.
Inventor： Pradeep Subrahmanyan
Abstract: The methods and systems disclosed here leverage currently available reliable top down imaging techniques used by SEMs and use computational methods to synthesize accurate 3D profiles of features of high aspect ratio structures in a device. Radial cross-sectional profiles obtained from different locations along the lateral direction at different heights/depths are stitched together to create one composite 3D profile of the HAR feature.
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