知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.017 seconds)

    METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM
    2.
    发明公开
    METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM 审中-公开

    公开(公告)号：US20240145217A1

    公开(公告)日：2024-05-02

    申请号：US17979545

    申请日：2022-11-02

    Applicant: Applied Materials, Inc.

    Inventor： Qintao Zhang ,  Eric Jay Simmons, JR. ,  Jared Traynor ,  Wei Zou ,  Miguel Fung ,  Samphy Hong

    IPC: H01J37/32

    CPC classification number: H01J37/32412 ,  H01J2237/2001 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/3365

    Abstract: Methods for processing a dielectric film to improve its uniformity of thickness and refractive index are disclosed. The dielectric film is deposited using conventional approaches, such as chemical vapor deposition (CVD) or spin coating. The workpiece, with the applied dielectric film is then processed to improve the uniformity of the thickness. This processing may comprise implanting a thinning species to the thicker portions of the dielectric film to reduce the thickness of these portions. The thinning species may be silicon or another suitable species. This processing may alternatively or additionally include implanting a thickening species to the thinner portions of the dielectric film to increase their thickness. The thickening species may be helium or another suitable species. This approach may reduce the variation in thickness by 50% or more.

    ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH
    4.
    发明公开
    ION IMPLANTATION TO CONTROL BURIED CHANNEL RECESS DEPTH 审中-公开

    公开(公告)号：US20230253208A1

    公开(公告)日：2023-08-10

    申请号：US17592617

    申请日：2022-02-04

    Applicant: Applied Materials, Inc.

    Inventor： Qintao Zhang ,  Wei Zou

    IPC: H01L21/265 ,  H01L21/266

    CPC classification number: H01L21/26513 ,  H01L21/266 ,  H01L21/26533

    Abstract: Disclosed herein are approaches for reducing buried channel recess depth using a non-doping ion implant prior to formation of the buried channel. In one approach, a method may include providing an oxide layer over a substrate, performing a non-doping implantation process through the oxide layer to form an amorphous region in the substrate, and forming a photoresist over the oxide layer. The method may further include forming a buried layer in the substrate by implanting the substrate through an opening in the photoresist, and performing an oxidation and dopant drive-in process to the amorphous region and to the buried layer to form a second oxide layer.

    Isolation method to enable continuous channel layer
    5.
    发明授权
    Isolation method to enable continuous channel layer 有权

    公开(公告)号：US11664419B2

    公开(公告)日：2023-05-30

    申请号：US17065065

    申请日：2020-10-07

    Applicant: Applied Materials, Inc.

    Inventor： Sipeng Gu ,  Wei Zou ,  Kyu-Ha Shim

    IPC: H01L29/06 ,  H01L21/762

    CPC classification number: H01L29/0653 ,  H01L21/76243

    Abstract: A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.

    Isolation Method To Enable Continuous Channel Layer
    10.
    发明申请
    Isolation Method To Enable Continuous Channel Layer 有权

    公开(公告)号：US20220109045A1

    公开(公告)日：2022-04-07

    申请号：US17065065

    申请日：2020-10-07

    Applicant: Applied Materials, Inc.

    Inventor： Sipeng Gu ,  Wei Zou ,  Kyu-Ha Shim

    IPC: H01L29/06 ,  H01L21/762

    Abstract: A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.

Patent Agency Ranking