公开(公告)号：US11721530B2

公开(公告)日：2023-08-08

申请号：US16801731

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Christopher R. Hatem

IPC: H01J37/32 ,  H01J37/317

CPC classification number: H01J37/32596 ,  H01J37/3171 ,  H01J37/32422 ,  H01J37/32449 ,  H01J2237/2001

Abstract: Provided herein are approaches for controlling radicals in proximity to a wafer. In some embodiments, a system may include a radical source operable to generate radicals in proximity to the wafer, and a filter positioned between the radical source and the wafer, wherein the filter includes a first plate operable to control radicals generated by the radical source. The system may further include an ion source operable to deliver an ion beam to the wafer, wherein the ion beam passes outside the filter.

公开(公告)号：US11315790B2

公开(公告)日：2022-04-26

申请号：US16660417

申请日：2019-10-22

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Christopher R. Hatem

IPC: H01L21/223 ,  H01L21/265 ,  H01L21/02 ,  H01J37/317

Abstract: A method may include providing a substrate in a plasma chamber, the substrate comprising a monocrystalline semiconductor, having an upper surface. The method may include initiating a plasma in the plasma chamber, the plasma comprising an amorphizing ion species, and applying a pulse routine to the substrate, the pulse routine comprising a plurality of extraction voltage pulses, wherein a plurality of ion pulses are directed to the substrate, and wherein an ion dose per pulse is greater than a threshold for low dose amorphization.

公开(公告)号：US20210265139A1

公开(公告)日：2021-08-26

申请号：US16801731

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Christopher R. Hatem

IPC: H01J37/32 ,  H01J37/317

Abstract: Provided herein are approaches for controlling radicals in proximity to a wafer. In some embodiments, a system may include a radical source operable to generate radicals in proximity to the wafer, and a filter positioned between the radical source and the wafer, wherein the filter includes a first plate operable to control radicals generated by the radical source. The system may further include an ion source operable to deliver an ion beam to the wafer, wherein the ion beam passes outside the filter.

公开(公告)号：US20240153775A1

公开(公告)日：2024-05-09

申请号：US17980905

申请日：2022-11-04

Applicant: Applied Materials, Inc.

Inventor： Christopher R. Hatem ,  Michael Noel Kennedy ,  Edmund G. Seebauer

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/26513 ,  H01L21/02049 ,  H01L21/324 ,  H01J37/3171

Abstract: A method of method of treating a semiconductor substrate. The method may include, in a beamline ion implanter, exposing a substrate surface of the semiconductor substrate to a plasma clean and exposing the substrate surface to a hydrogen treatment from a plasma source. The method may further include, in the beamline ion implanter, exposing the substrate to an implant process after formation of the hydrogen passivation, wherein the substrate is maintained under vacuum over a process duration spanning the plasma clean, the hydrogen treatment, and the implant process.

公开(公告)号：US20240153774A1

公开(公告)日：2024-05-09

申请号：US17980900

申请日：2022-11-04

Applicant: Applied Materials, Inc.

Inventor： Christopher R. Hatem ,  Michael Noel Kennedy ,  Joseph C. Olson ,  Edmund G. Seebauer

IPC: H01L21/225 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2251 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/26513 ,  H01J2237/332 ,  H01J2237/335

Abstract: A method of doping a substrate may include exposing a substrate surface of the semiconductor substrate to a plasma clean, performing a deposition of a dopant layer on the substrate surface using a plasma source, after the plasma clean, the dopant layer comprising a dopant element; and exposing the substrate to an implant process when the dopant layer is disposed on the substrate surface, wherein the implant process introduces an ion species comprising the dopant element into the substrate, wherein the substrate is maintained under vacuum over a process duration spanning the plasma clean, the deposition of the dopant layer, and the implant process, and wherein at least a portion of the dopant layer is implanted into the substrate during the implant process.