公开(公告)号：US11699570B1

公开(公告)日：2023-07-11

申请号：US17665970

申请日：2022-02-07

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Wei Zou ,  Hans-Joachim L. Gossmann ,  Qintao Zhang ,  Aseem Kumar Srivastava ,  William Robert Bogiages, Jr. ,  Wei Zhao

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31705

Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.