公开(公告)号：US20240203743A1

公开(公告)日：2024-06-20

申请号：US18084670

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Cao-Minh Vincent Lu ,  Ana Cristina Gomez Herrero ,  Hans-Joachim Ludwig Gossmann ,  Wei Zou ,  Andrew Michael Waite

IPC: H01L21/302 ,  C23C14/04 ,  C23C14/48 ,  H01J37/304 ,  H01J37/317 ,  H01L21/02 ,  H01L21/266 ,  H01L21/311

CPC classification number: H01L21/302 ,  C23C14/042 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/0223 ,  H01L21/266 ,  H01L21/31111

Abstract: A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.