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    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING
    2.
    发明公开
    DESCENDING ETCHING RESISTANCE IN ADVANCED SUBSTRATE PATTERNING 审中-公开

    公开(公告)号：US20230263012A1

    公开(公告)日：2023-08-17

    申请号：US18139243

    申请日：2023-04-25

    申请人： Applied Materials, Inc.

    发明人： Chung-Chia CHEN ,  Ji Young CHOUNG ,  Dieter HAAS ,  Yu-Hsin LIN ,  Jungmin LEE ,  Wen-Hao WU ,  Si Kyoung KIM

    IPC分类号： H10K59/122 ,  H10K59/173 ,  H10K59/80

    CPC分类号： H10K59/122 ,  H10K59/173 ,  H10K59/873

    摘要： Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

    METAL OVERHANG FOR ADVANCED PATTERNING
    9.
    发明公开
    METAL OVERHANG FOR ADVANCED PATTERNING 审中-公开

    公开(公告)号：US20230269969A1

    公开(公告)日：2023-08-24

    申请号：US18040161

    申请日：2021-07-27

    申请人： Applied Materials, Inc.

    发明人： Jungmin LEE ,  Seong Ho YOO ,  Dieter HAAS ,  Si Kyoung KIM ,  Yu-hsin LIN ,  Ji Young CHOUNG

    IPC分类号： H10K59/122 ,  H10K59/80 ,  H10K59/12

    CPC分类号： H10K59/122 ,  H10K59/873 ,  H10K59/1201

    摘要： Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The adjacent metal-containing overhang structures defining each sub-pixel of the sub-pixel circuit of the display provide for formation of the sub-pixel circuit using evaporation deposition and provide for the metal-containing overhang structures to remain in place after the sub-pixel circuit is formed (e.g., utilizing the methods of the fifth, sixth, or seventh exemplary embodiments). Evaporation deposition may be utilized for deposition of an OLED material and cathode. The metal-containing overhang structures define deposition angles, i.e., provide for a shadowing effect during evaporation deposition. The encapsulation layer of a respective sub-pixel is disposed over the cathode with the encapsulation layer extending under at least a portion of each of the adjacent metal-containing overhang structures and along a sidewall of each of the adjacent metal-containing overhang structures.

    OLED PANEL WITH INORGANIC PIXEL ENCAPSULATING BARRIER
    10.
    发明申请
    OLED PANEL WITH INORGANIC PIXEL ENCAPSULATING BARRIER 有权

    公开(公告)号：US20220077251A1

    公开(公告)日：2022-03-10

    申请号：US17193321

    申请日：2021-03-05

    申请人： Applied Materials, Inc.

    发明人： Ji-young CHOUNG ,  Dieter HAAS ,  Yu Hsin LIN ,  Jungmin LEE ,  Seong Ho YOO ,  Si Kyoung KIM

    IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L51/56

    摘要： Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a substrate, adjacent pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, inorganic overhang structures disposed on an upper surface of the PDL structures, and a plurality of sub-pixels. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material disposed over and in contact with the anode, a cathode disposed over the OLED material and extending under the inorganic overhang structures adjacent to each sub-pixel, and an encapsulation layer disposed over the cathode. The encapsulation layer extends under at least a portion of the inorganic overhang structures and along a sidewall of the inorganic overhang structures.