Abstract:
A cache memory circuit that evicts cache lines based on which cache lines are storing background data patterns is disclosed. The cache memory circuit can store multiple cache lines and, in response to receiving a request to store a new cache line, can select a particular one of previously stored cache lines. The selection may be performed based on data patterns included in the previously stored cache lines. The cache memory circuit can also perform accesses where the internal storage arrays are not activated in response to determining data in the location specified by the requested address is background data. In systems employing virtual addresses, a translation lookaside buffer can track the location of background data in the cache memory circuit.
Abstract:
An apparatus and method for operating a level shifter circuit that receives an input signal of interderminate voltage level is disclosed. The level shifter circuit may receive the input signal from a circuit block coupled to a first power supply signal, and generate an output signal using a second power supply signal, different than the first power supply signal. The level shifter circuit may clamp a storage node included in the level shifter circuit, and isolated at least one circuit path included in the level shifter circuit in response to a determination that an isolation signal has been enabled.
Abstract:
Methods and apparatuses for modifying a work function of transistors included in an integrated circuit are disclosed. A tester unit may be configured to test an integrated circuit that includes a plurality of circuit paths. The tester unit may be further configured to analyze the results from testing the integrated circuit and, based on the analysis, identify a circuit path that fails to meet a desired performance goal. A work function of a transistor included in the identified circuit path may be modified by the tester unit using an energy source external to the integrated circuit.
Abstract:
Methods and apparatuses for modifying a work function of transistors included in an integrated circuit are disclosed. A tester unit may be configured to test an integrated circuit that includes a plurality of circuit paths. The tester unit may be further configured to analyze the results from testing the integrated circuit and, based on the analysis, identify a circuit path that fails to meet a desired performance goal. A work function of a transistor included in the identified circuit path may be modified by the tester unit using an energy source external to the integrated circuit.
Abstract:
An apparatus includes a master latch circuit including a first circuit and a second circuit, and a slave latch circuit including a third circuit and a fourth circuit. The first circuit and the second circuit may be coupled to a first shared circuit node, and the third circuit and the fourth circuit may be coupled to a second shared circuit node. The master latch circuit may be configured to store a value of an input signal in response to an assertion of a clock signal. The slave latch circuit may be configured to store an output value of the master latch circuit in response to a de-assertion of the clock signal. The master latch circuit may also be configured to de-couple the first shared circuit node from a ground reference node in response to the de-assertion of the clock signal.
Abstract:
An apparatus and method for determining performance of system is disclosed. While operating in a test mode, a plurality of test results may be received and stored in a memory. Each test result may be indicative of a performance of the system when the system is operating under a respective test condition. Also, during the test mode, a respective value of an operating parameter of a predetermined system element at each test condition. An association between each test result and a corresponding detected respective value of the operating parameter may be provided. During a normal operating mode, an operating value of the operating parameter may be determined. A performance level of the system based on a test value retrieved from memory dependent upon the operating value and the association may then be determined.
Abstract:
A method and apparatus for implementing mode based skew is disclosed. In one embodiment, an IC includes a number of different functional units each coupled to receive a respective one of a number of different clock signals. One or more of the functional circuit blocks includes at least two clock-gating circuits that are coupled to receive the clock signal provided to that functional circuit block. During a scan test, a first clock-gating circuit within a functional circuit block is configured to provide a first delay to the clock signal. A second clock-gating circuit within the functional circuit block may provide a second delay to the clock signal, the second delay being different from the first.
Abstract:
Embodiments of a memory are disclosed that may allow for the detection of weak data storage cells or may allow operation of data storage cells under conditions that may represent the effects of transistor ageing. The memory may include data storage cells, a column multiplexer, a sense amplifier, and a current injector. The current injector may be configured to generate multiple current levels and may be operable to controllably select one of the current levels to either source current to or sink current from the input of the sense amplifier.
Abstract:
Embodiments of a memory are disclosed that may allow for the detection of weak data storage cells or may allow operation of data storage cells under conditions that may represent the effects of transistor ageing. The memory may include data storage cells, a column multiplexer, a sense amplifier, and a current injector. The current injector may be configured to generate multiple current levels and may be operable to controllably select one of the current levels to either source current to or sink current from the input of the sense amplifier.
Abstract:
Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column multiplexer, a first sense amplifier and a second sense amplifier, and an output circuit. The gain level of the first sense amplifier may be higher than the gain level of the second sense amplifier. The output circuit may include a multiplexer and the multiplexer may be operable to controllably select one of the outputs of the first and second sense amplifiers and pass the value of the selected sense amplifier. The output circuit may include a node that couples the outputs of the first and second sense amplifiers and the outputs of the first and second sense amplifiers may be able to be set to a high impedance state.