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    ISOTROPIC SILICON NITRIDE REMOVAL
    2.
    发明公开
    ISOTROPIC SILICON NITRIDE REMOVAL 审中-公开

    公开(公告)号：US20240120210A1

    公开(公告)日：2024-04-11

    申请号：US17963687

    申请日：2022-10-11

    Applicant: Applied Materials, Inc.

    Inventor： Mikhail Korolik ,  Paul E. Gee ,  Wei Ying Doreen Yong ,  Tuck Foong Koh ,  John Sudijono ,  Philip A. Kraus ,  Thai Cheng Chua

    IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065

    CPC classification number: H01L21/32136 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3065

    Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

    Modular microwave source with local Lorentz force
    5.
    发明授权
    Modular microwave source with local Lorentz force 有权

    公开(公告)号：US11037764B2

    公开(公告)日：2021-06-15

    申请号：US15588597

    申请日：2017-05-06

    Applicant: Applied Materials, Inc.

    Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Mani Subramani

    IPC: H01J37/32 ,  H01J27/18 ,  H05H1/46 ,  C23C16/511 ,  C23C14/35

    Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.

    THERMAL BREAK FOR HIGH-FREQUENCY ANTENNAE
    6.
    发明申请
    THERMAL BREAK FOR HIGH-FREQUENCY ANTENNAE 审中-公开

    公开(公告)号：US20200343065A1

    公开(公告)日：2020-10-29

    申请号：US16828602

    申请日：2020-03-24

    Applicant: Applied Materials, Inc.

    Inventor： Thai Cheng Chua ,  Hanh Nguyen ,  Philip Allan Kraus

    IPC: H01H37/76 ,  H05H1/46 ,  H01L35/28 ,  H05K7/20

    Abstract: Embodiments disclosed herein include a high-frequency emission module. In an embodiment, the high-frequency emission module comprises a solid state high-frequency power source, an applicator for propagating high-frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In an embodiment, the thermal break comprises a substrate, a trace on the substrate, and a ground plane.

    Symmetric and irregular shaped plasmas using modular microwave sources
    7.
    发明授权
    Symmetric and irregular shaped plasmas using modular microwave sources 有权

    公开(公告)号：US10707058B2

    公开(公告)日：2020-07-07

    申请号：US15485217

    申请日：2017-04-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Thai Cheng Chua ,  Farzad Houshmand ,  Christian Amormino ,  Philip Allan Kraus

    IPC: H01J37/32

    Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

    PHASED ARRAY MODULAR HIGH-FREQUENCY SOURCE
    8.
    发明申请
    PHASED ARRAY MODULAR HIGH-FREQUENCY SOURCE 审中-公开

    公开(公告)号：US20200066490A1

    公开(公告)日：2020-02-27

    申请号：US16669257

    申请日：2019-10-30

    Applicant: Applied Materials, Inc.

    Inventor： Philip Allan Kraus ,  Thai Cheng Chua ,  Christian Amormino ,  Dmitry A. Dzilno

    IPC: H01J37/32 ,  H01Q3/34 ,  H01Q21/00 ,  H03B5/24

    Abstract: Embodiments described herein include a modular high-frequency emission source comprising a plurality of high-frequency emission modules and a phase controller. In an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, each oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, each amplification module is coupled to an oscillator module, in an embodiment, each applicator is coupled to an amplification module. In an embodiment, the phase controller is communicatively coupled to each oscillator module.

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