公开(公告)号：US20220389571A1

公开(公告)日：2022-12-08

申请号：US17825229

申请日：2022-05-26

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Philip A. Kraus ,  Thai Cheng Chua ,  James Canducci ,  Hanhong Chen ,  Zhejun Zhang ,  Hao Zhang ,  Xiankai Yu

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.