公开(公告)号：US20250043423A1

公开(公告)日：2025-02-06

申请号：US18228549

申请日：2023-07-31

Applicant: Applied Materials, Inc.

Inventor： William Durand ,  Abdullah Zafar ,  Usman Chowdhury ,  Amir Bayati ,  Farzad Houshmand ,  David J. Coumou ,  Kasturi Sarang ,  Kenric Choi

IPC: C23C16/455 ,  G01N21/3504

Abstract: Vapor concentration sensors for deposition process or deposition chamber condition monitoring are described. In an example, a deposition system includes a deposition chamber, a deposition precursor source coupled to an inlet of the deposition chamber, and a non-dispersive infrared (NDIR) vapor concentration sensor between the deposition precursor source and the deposition chamber.

公开(公告)号：US20220155689A1

公开(公告)日：2022-05-19

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：US12142458B2

公开(公告)日：2024-11-12

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/24 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20210166923A1

公开(公告)日：2021-06-03

申请号：US17150702

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01L21/67 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/458 ,  C23C16/44

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10903056B2

公开(公告)日：2021-01-26

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/50 ,  C23C16/455 ,  C23C16/509 ,  C23C16/458 ,  C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/40

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US20210210312A1

公开(公告)日：2021-07-08

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20190276931A1

公开(公告)日：2019-09-12

申请号：US16296718

申请日：2019-03-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Anantha K. Subramani ,  Joung Joo Lee ,  Farzad Houshmand ,  Kelvin Chan ,  Kenneth Starks ,  Xianmin Tang

IPC: C23C14/54 ,  H01L21/02 ,  H01L21/285 ,  C23C14/50 ,  C23C14/34

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the linear PVD source, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is perpendicular to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move over a working surface of the substrate disposed on the substrate support during operation.

公开(公告)号：US10121655B2

公开(公告)日：2018-11-06

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  H01J37/32

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20240379331A1

公开(公告)日：2024-11-14

申请号：US18144745

申请日：2023-05-08

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Kelvin Chan ,  Adam Fischbach ,  Farzad Houshmand ,  Christian Valencia ,  Philip Allan Kraus

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments disclosed herein include an applicator for microwave plasma generation. In an embodiment, the applicator comprises a resonator body with a hole into an axial center of the resonator body, where the resonator body comprises a first dielectric material. In an embodiment, the applicator further comprises a pin inserted into the hole, where the pin is an electrically conductive material. In an embodiment, the applicator further comprises a plate under the resonator body, where the plate comprises a second dielectric material that is different than the first dielectric material.

公开(公告)号：US20180330927A1

公开(公告)日：2018-11-15

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.