公开(公告)号：US20230230234A1

公开(公告)日：2023-07-20

申请号：US18096835

申请日：2023-01-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Sumit Kumar Jha ,  Dan Xie ,  Arina Nikitina ,  Debjit Ray ,  Yun-Ching Chang ,  Suraj Rengarajan

IPC: G06T7/00 ,  G06T5/00 ,  G06T7/11 ,  G06V10/82 ,  G06V20/70

CPC classification number: G06T7/0012 ,  G06T5/002 ,  G06T7/11 ,  G06V10/82 ,  G06V20/70 ,  G06T2207/30024

Abstract: A system and method of performing deep cell body segmentation on a biological sample is provided. The method includes receiving a first and a second stained image. The first image is processed using a trained machine learned model that outputs locations of a plurality of cell nuclei in the first stained image. Seed points are then determined based on the locations of the plurality of cell nuclei. The second image is then processed using the seed points to determine a plurality of cell membranes using a watershed segmentation. The second image is then post-processed and an output image is produced. The output image is then analyzed and gene sequencing is performed.

公开(公告)号：US10047430B2

公开(公告)日：2018-08-14

申请号：US14205260

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/04 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

公开(公告)号：US20240145230A1

公开(公告)日：2024-05-02

申请号：US17976573

申请日：2022-10-28

Applicant: Applied Materials, Inc.

Inventor： Abhishek Mandal ,  Nitin Deepak ,  Geetika Bajaj ,  Ankur Kadam ,  Gopi Chandran Ramachandran ,  Suraj Rengarajan ,  Farhad K. Moghadam ,  Deenesh Padhi ,  Srinivas M. Satya ,  Manish Hemkar ,  Vijay Tripathi ,  Darshan Thakare

IPC: H01L21/02

CPC classification number: H01L21/0206 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/0226

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.

公开(公告)号：US20220270870A1

公开(公告)日：2022-08-25

申请号：US17667700

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Prerna Sonthalia Goradia ,  Seshadri Ganguli ,  Srinivas Gandikota ,  Robert Jan Visser ,  Suraj Rengarajan

IPC: H01L21/02

Abstract: A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50° C. to 500° C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeating the ALD cycle to form a silicon oxide film. The ALD cycle comprises: exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor; purging the processing chamber of the aminosilane precursor; exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent for a duration in a range of greater than or equal to 100 milliseconds to less than or equal to 3 seconds; and purging the processing chamber of the oxidizing agent.

公开(公告)号：US20220309670A1

公开(公告)日：2022-09-29

申请号：US17681260

申请日：2022-02-25

Applicant: Applied Materials, Inc.

Inventor： Sumit Jha ,  Divakar Dass ,  Nisarg Shah ,  Mayukh Bhattacharyya ,  Suraj Rengarajan

IPC: G06T7/00 ,  G16H30/40 ,  G06T7/11

Abstract: Methods and systems for visualizing information on gigapixels Whole Slide Image are described. In an example, a method for visualizing information includes providing an image viewer with a list of information to visualize, loading an image and a mask for an information source, and dynamically finding a zoom factor. If the zoom factor is not suitable for fine detailed view, then information for a coarse mask is shown. If the zoom factor is suitable for fine detailed view, then information for a fine detailed mask is chosen from a plurality of information sources.