公开(公告)号：US20230073011A1

公开(公告)日：2023-03-09

申请号：US17900318

申请日：2022-08-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  Irena H. WYSOK ,  Jianxin LEI ,  Rongjun WANG ,  Lei ZHOU ,  Kirankumar Neelasandra SAVANDAIAH ,  Sundarapandian Ramalinga Vijayalakshmi REDDY

IPC: H01J37/34 ,  C23C14/56

Abstract: Methods and apparatus reduce defects in substrates processed in a physical vapor (PVD) chamber. In some embodiments, a method for cleaning a process kit disposed in an inner volume of a process chamber includes positioning a non-sputtering shutter disk on a substrate support of the PVD chamber; energizing an oxygen-containing cleaning gas disposed in the inner volume of the PVD chamber to create a plasma reactive with carbon-based materials; and heating the process kit having a carbon-based material adhered thereto while exposed to the plasma to remove at least a portion of the carbon-based material adhered to the process kit.

公开(公告)号：US20220310364A1

公开(公告)日：2022-09-29

申请号：US17838860

申请日：2022-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Halbert CHONG ,  Rong TAO ,  Jianxin LEI ,  Rongjun WANG ,  Keith A. Miller ,  Irena H. Wysok ,  Tza-Jing Gung ,  Xing Chen

IPC: H01J37/32 ,  H01J37/34 ,  B08B5/00 ,  C23C14/50 ,  C23C14/34

Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

公开(公告)号：US20210043429A1

公开(公告)日：2021-02-11

申请号：US16933926

申请日：2020-07-20

Applicant: Applied Materials, Inc.

Inventor： Hsin-wei TSENG ,  Casey Jane MADSEN ,  Yikai CHEN ,  Irena WYSOK ,  Halbert CHONG

IPC: H01J37/32 ,  C23C14/06 ,  C23C14/35 ,  C23C14/34 ,  H01J37/34

Abstract: Embodiments generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about 150 microinches to about 450 microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about 90 weight percent to about 99 weight percent, a thickness ranging from about 50 microns to about 500 microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1 E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

公开(公告)号：US20190352775A1

公开(公告)日：2019-11-21

申请号：US16412798

申请日：2019-05-15

Applicant: Applied Materials, Inc.

Inventor： Gang PENG ,  Halbert CHONG ,  Marcus PEREIRA ,  David W. GROECHEL

IPC: C23C16/44 ,  H01L21/67 ,  H01J37/32 ,  B08B7/02

Abstract: Embodiments described herein relate to a gas line cleaning system and a method of cleaning gas lines. The gas line cleaning system includes a connector having a first end and a second end, and a fluid system. The fluid system includes a fluid source configured to flow a fluid through a fluid conduit connected to the first end, and an ultrasonic transducer coupled to the fluid conduit configured to apply an ultrasonic energy to the fluid conduit to agitate the fluid. The ultrasonic energy creates a mechanical energy that reverberates in the fluid conduit and propagates into the fluid to remove particles that may have formed on an inside surface of a gas line connected to the second end and carry away particles inside the gas line.

公开(公告)号：US20220310363A1

公开(公告)日：2022-09-29

申请号：US17838855

申请日：2022-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Halbert CHONG ,  Rong TAO ,  Jianxin LEI ,  Rongjun WANG ,  Keith A. Miller ,  Irena H. Wysok ,  Tza-Jing Gung ,  Xing Chen

IPC: H01J37/32 ,  H01J37/34 ,  B08B5/00 ,  C23C14/50 ,  C23C14/34

Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

公开(公告)号：US20210319989A1

公开(公告)日：2021-10-14

申请号：US16846502

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Halbert CHONG ,  Rong TAO ,  Jianxin LEI ,  Rongjun WANG ,  Keith A. Miller ,  Irena H. Wysok ,  Tza-Jing Gung ,  Xing Chen

IPC: H01J37/32 ,  H01J37/34 ,  B08B5/00 ,  C23C14/50 ,  C23C14/34

Abstract: Methods and apparatus for cleaning a process kit configured for processing a substrate are provided. For example, a process chamber for processing a substrate can include a chamber wall; a sputtering target disposed in an upper section of the inner volume; a pedestal including a substrate support having a support surface to support a substrate below the sputtering target; a power source configured to energize sputtering gas for forming a plasma in the inner volume; a process kit surrounding the sputtering target and the substrate support; and an ACT connected to the pedestal and a controller configured to tune the pedestal using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit, wherein the predetermined potential difference is based on a percentage of total capacitance of the ACT and a stray capacitance associated with a grounding path of the process chamber.

公开(公告)号：US20230377892A1

公开(公告)日：2023-11-23

申请号：US17748329

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Inventor： Yiyang WAN ,  Weifeng YE ,  Shumao ZHANG ,  Gary HOW ,  Jiang LU ,  Lei ZHOU ,  Dien-yeh WU ,  Douglas LONG ,  Avgerinos V. GELATOS ,  Ying-Bing JIANG ,  Rongjun WANG ,  Xianmin TANG ,  Halbert CHONG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42 ,  C23C16/507

CPC classification number: H01L21/28518 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/42 ,  C23C16/507 ,  H01J37/32816 ,  H01J2237/332

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.

公开(公告)号：US20230122956A1

公开(公告)日：2023-04-20

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  John C. FORSTER ,  Irena H. WYSOK ,  Tiefeng SHI ,  Gang FU ,  Renu WHIG ,  Keith A. MILLER ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Jianxin LEI ,  Rongjun WANG ,  Tza-Jing GUNG ,  Kirankumar Neelasandra SAVANDAIAH ,  Avinash NAYAK ,  Lei ZHOU

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.