公开(公告)号：US20240304429A1

公开(公告)日：2024-09-12

申请号：US18118543

申请日：2023-03-07

Applicant: Applied Materials, Inc.

Inventor： Tiefeng SHI ,  Gang FU ,  Keith A. MILLER

IPC: H01J37/32 ,  G06N3/09

CPC classification number: H01J37/32944 ,  G06N3/09 ,  H01J37/32091 ,  H01J2237/24564

Abstract: Methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. In some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.

公开(公告)号：US20240112886A1

公开(公告)日：2024-04-04

申请号：US18334063

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Tiefeng SHI ,  Gang FU ,  Keith A. MILLER

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3299 ,  H01J2237/327 ,  H01J2237/3321

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for dynamic impedance matching across multiple frequency bands of a power source. An example method includes amplifying a broadband signal, splitting the amplified broadband signal across a plurality of channel paths coupled to an impedance matching network, and adjusting at least one first impedance associated with the impedance matching network to achieve a second impedance within a threshold value based at least in part on feedback associated with the broadband signal. The impedance matching network includes a plurality of impedance matching circuits coupled to plasma excitation circuitry, and each of the impedance matching circuits is coupled to a different path of the plurality of channel paths and an output node.

公开(公告)号：US20250118543A1

公开(公告)日：2025-04-10

申请号：US18949472

申请日：2024-11-15

Applicant: Applied Materials, Inc.

Inventor： Tiefeng SHI ,  Gang FU ,  Keith A. MILLER

IPC: H01J37/32 ,  G06N3/09

Abstract: Methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. In some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.

公开(公告)号：US20230122956A1

公开(公告)日：2023-04-20

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong WANG ,  Halbert CHONG ,  John C. FORSTER ,  Irena H. WYSOK ,  Tiefeng SHI ,  Gang FU ,  Renu WHIG ,  Keith A. MILLER ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Jianxin LEI ,  Rongjun WANG ,  Tza-Jing GUNG ,  Kirankumar Neelasandra SAVANDAIAH ,  Avinash NAYAK ,  Lei ZHOU

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US20220384149A1

公开(公告)日：2022-12-01

申请号：US17333873

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Tiefeng SHI ,  Keith A. MILLER ,  Gang FU

IPC: H01J37/32 ,  H03H7/38 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.