摘要:
A method for performing error correction for a plurality of storage drives and a storage appliance comprising a plurality of storage devices is disclosed. In one embodiment, the method includes generating a first set of parity bits from a first set of data of at least one of the plurality of storage devices, the first set of parity bits capable of correcting a first number of error bits of the first set of data. The method further includes generating a second set of parity bits from a concatenated set of the first data and a second set of data from at least another of the plurality of storage devices, the second set of parity bits capable of correcting a second number of error bits of the first set of data, the second number being greater than the first number. The method further includes reading the first set of data and (i) correcting error bits within the first set of data with the first set of parity bits where a number of error bits is less than the first number of error bits; and (ii) correcting error bits within the first set of data with the second set of parity bits where the number of error bits is greater than the first number.
摘要:
A high electron mobility transistor (HEMT) device with a highly resistive layer co-doped with carbon (C) and a donor-type impurity and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a substrate, the highly resistive layer co-doped with C and the donor-type impurity formed above the substrate, a channel layer formed above the highly resistive layer, and a barrier layer formed above the channel layer. In one embodiment, the highly resistive layer comprises gallium nitride (GaN). In one embodiment, the donor-type impurity is silicon (Si). In another embodiment, the donor-type impurity is oxygen (O).
摘要:
A high voltage semiconductor structure with a field plate comprising a depletable material that increases the breakdown voltage of the semiconductor structure. A depletion region forms within the depletable field plate which redistributes the electric field and preventing electric charges from concentrating at the corners of the field plate. The thickness, doping concentration, doping uniformity, and geometric shape of the field plates may be adjusted to optimize the effect of the charge redistribution.
摘要:
The present specification discloses a novel light emitting diode package having a package substrate with a light emitting layer bonded to the package substrate. Unlike conventional LED packages (such as those shown in FIGS. 1 and 2), the chip handling substrate typically located between the package substrate and the light emitting layer is not present. In addition, the LED package of the present specification may comprise an insulating layer formed on the package substrate and the light emitting layer. The LED package of the present specification may further comprise an interconnect metal formed on the insulating layer and the light emitting layer, wherein the interconnect metal electrically connects the light emitting layer to the package substrate.
摘要:
A light emitting diode (LED) assembly with a current blocking layer along the periphery of the LED is disclosed. In one embodiment, the LED assembly includes an LED comprising a light emitting layer disposed between a first layer having a first conductivity type and a second layer having a second conductivity type. The LED assembly further includes a contact electrically coupled to the first layer and a current blocking layer formed along a periphery of the LED at an interface with the contact, and covering a peripheral portion of the first contact. The current blocking layer forms a non-ohmic connection with the contact, thereby limiting the current injection between the contact and the first layer of the LED. In one embodiment, the current blocking layer surrounds a portion of the first layer, defining a portion of the light emitting layer that emits photons. In one embodiment, the current blocking layer comprises a transparent insulating layer between the LED and the contact. In one embodiment, the current blocking layer comprises a plasma treated region of the first layer of the LED.
摘要:
An LED package and method for LED packaging is disclosed. In one embodiment, an LED package includes a carrier substrate having a predefined surface area, an LED device bonded to the carrier substrate, the LED device having a footprint area of at least fifty percent of the predefined surface area of the carrier substrate, and an encapsulant lens having a top surface inclined inwardly at an angle in the range of about 10° to about 140°. In one embodiment, the top surface of the encapsulant lens layer has a concave cone shape. In one embodiment, a wafer level packaging process includes forming an encapsulant lens layer portion having a top surface inclined inwardly at an angle in the range of about 10° to about 140° on each of a plurality of LED devices bonded to a carrier substrate wafer.
摘要:
Imprint lithography methods that incorporate depositing droplets of polymerizable material in patterns that improve fill time performance when employing directionally-oriented imprint templates. The patterns are based on grid arrays formed of repeating sets of rows of droplets oriented along fast and slow axes, with droplets of each row offset along the slow axis relative to droplets in adjacent rows.
摘要:
A solid state drive (SSD) with improved power efficiency includes one or more non-volatile memory devices configured to operate according to a programming voltage for a program function or an erase function and to a supply voltage for a read function. The SSD also includes a voltage regulator, external of the one or more non-volatile memory devices, having an output connected to the one or more non-volatile memory devices to supply the programming voltage and an input connected to receive a first voltage, the voltage regulator configured to convert the first voltage to the programming voltage. A discrete capacitor is connected to supply the first voltage to the voltage regulator. The one or more non-volatile memory devices operate according to the programming voltage supplied by the voltage regulator during both the normal operation of the SSD and in the event of a power loss or failure of the SSD.
摘要:
Imprint lithography template chucks and related systems and methods are provided that substantially maintain structural support functions while significantly enhancing imprint quality functions. The chucks incorporate dynamic vacuum seals to substantially reduce template contact during alignment and distortion correction while still providing good structural support upon separation.
摘要:
Imprint lithography methods that incorporate depositing droplets of polymerizable material in patterns that improve fill time performance when employing directionally-oriented imprint templates. The patterns are based on grid arrays formed of repeating sets of rows of droplets oriented along fast and slow axes, with droplets of each row offset along the slow axis relative to droplets in adjacent rows.