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242 条记录 (耗时 0.091 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09525023B2

    公开(公告)日：2016-12-20

    申请号：US13473643

    申请日：2012-05-17

    申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yasuhiro Jinbo ,  Tomohiro Kimura ,  Yoshitaka Yamamoto

    发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yasuhiro Jinbo ,  Tomohiro Kimura ,  Yoshitaka Yamamoto

    IPC分类号： H01L29/10 ,  H01L29/04 ,  H01L29/417 ,  H01L29/786

    CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/78678 ,  H01L29/78696

    摘要： One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.

    摘要翻译： 本发明的一个实施例是包括栅电极的半导体器件; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜上并位于所述栅极电极上方的半导体层; 形成在所述半导体层上的第二绝缘膜; 形成在第二绝缘膜的顶表面和侧表面上的第一绝缘膜，半导体层的侧表面和栅极绝缘膜; 硅层，其形成在第一绝缘膜上并电连接到半导体层; 以及形成在硅层上的源电极和漏电极。 源电极和漏电极在第一绝缘膜上彼此电分离。 半导体层不与源电极和漏电极中的每一个接触。

    Semiconductor device, process for production of the semiconductor device, and display device equipped with the semiconductor device
    4.
    发明授权
    Semiconductor device, process for production of the semiconductor device, and display device equipped with the semiconductor device 有权
    半导体装置，半导体装置的制造方法以及配备有该半导体装置的显示装置

    公开(公告)号：US08975637B2

    公开(公告)日：2015-03-10

    申请号：US13500023

    申请日：2010-09-21

    申请人： Hiroshi Matsukizono ,  Tomohiro Kimura ,  Hiroyuki Ogawa

    发明人： Hiroshi Matsukizono ,  Tomohiro Kimura ,  Hiroyuki Ogawa

    IPC分类号： H01L27/14 ,  G02F1/1362 ,  G02F1/133 ,  G02F1/1333 ,  H01L27/12

    CPC分类号： G02F1/1362 ,  G02F1/13318 ,  G02F1/13338 ,  H01L27/1214

    摘要： A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123).

    摘要翻译： 薄膜二极管（100A）包括具有第一，第二和第三半导体区域的半导体层（130），形成在半导体层（130）上的第一绝缘层（122）和形成在第一绝缘层 第一绝缘层（122）。 第一半导体区域（134A）含有第一浓度的第一导电类型的杂质; 第二半导体区域（135A）在第二浓度下含有不同于第一导电类型的第二导电类型的杂质; 并且第三半导体区域（133A）含有比第一浓度低的第三浓度的第一导电型杂质，或者包含第二浓度低于第二浓度的第三浓度的第二导电型杂质。 第一半导体区域（134A）符合第二绝缘层（123）中的孔径图案，或者第二半导体区域（135A）符合第二绝缘层（123）中的孔径图案。

    Display device and method of manufacturing display device
    8.
    发明授权
    Display device and method of manufacturing display device 有权
    显示装置及制造显示装置的方法

    公开(公告)号：US08872986B2

    公开(公告)日：2014-10-28

    申请号：US13701565

    申请日：2011-05-30

    申请人： Tokuaki Kuniyoshi ,  Tomohiro Kimura

    发明人： Tokuaki Kuniyoshi ,  Tomohiro Kimura

    IPC分类号： G02F1/1335 ,  G02F1/1333 ,  H01L33/08 ,  G06F3/041 ,  G06F3/045 ,  H01L33/58

    CPC分类号： H01L33/08 ,  G02F1/13338 ,  G06F3/0412 ,  G06F3/045 ,  H01L33/58

    摘要： A display device includes a glass substrate, a glass substrate arranged at a distance from and opposite to the glass substrate, a lower electrode formed on the glass substrate, a counter electrode formed on the glass substrate opposite to the lower electrode, a spacer ball for supporting the glass substrate and the glass substrate to maintain a gap between the glass substrate and the glass substrate, and a plurality of conductive particles in particulate form arranged between the glass substrate and the glass substrate, a clearance being provided between the conductive particles positioned on the lower electrode and the counter electrode, the conductive particles positioned on the lower electrode being able to come into contact with the counter electrode when the glass substrate is pressed.

    摘要翻译： 显示装置包括玻璃基板，与玻璃基板一定距离配置的玻璃基板，形成在玻璃基板上的下部电极，与该下部电极相对的玻璃基板上形成的对置电极， 支撑玻璃基板和玻璃基板以保持玻璃基板和玻璃基板之间的间隙，以及布置在玻璃基板和玻璃基板之间的多个颗粒形式的导电颗粒，在位于 下电极和对电极，当玻璃基板被按压时，位于下电极上的导电粒子能够与对电极接触。

    Pilot patterns for OFDM systems with multiple antennas
    10.
    发明授权
    Pilot patterns for OFDM systems with multiple antennas 有权
    具有多个天线的OFDM系统的导频模式

    公开(公告)号：US08837613B2

    公开(公告)日：2014-09-16

    申请号：US13255388

    申请日：2011-01-13

    申请人： Mihail Petrov ,  Tomohiro Kimura ,  Mikihiro Ouchi

    发明人： Mihail Petrov ,  Tomohiro Kimura ,  Mikihiro Ouchi

    IPC分类号： H04B7/02 ,  H04L27/06 ,  H04L27/04 ,  H04L27/26 ,  H04L25/02

    CPC分类号： H04L5/0048 ,  H04B7/02 ,  H04B7/0613 ,  H04L25/0224 ,  H04L27/2611 ,  H04L27/2613 ,  H04L27/2627 ,  H04L27/2649

    摘要： The present invention relates to orthogonal frequency-division multiplexing (OFDM) communication systems with multiple transmit antennas receive antennas, and in particular to methods for inserting scattered pilots (SPs) into the transmit signals of such OFDM systems, for estimating channel properties on the basis of the scattered pilots, a multi-antenna OFDM transmitter, and an OFDM receiver. In this context, it is the particular approach of the present invention to keep the same SP pattern like in the single-transmitter case, to partition the pilots into as many subsets as there are transmitters (transmit antennas), and to interleave these subsets both in time and in frequency. In this manner, the granularity of pilots of the same subset is reduced. This offers increased flexibility in designing the scattered pilot patterns and greater accuracy of the estimated channel properties.

    摘要翻译： 本发明涉及具有多个发射天线的正交频分复用（OFDM）通信系统接收天线，特别涉及用于将散射导频（SP）插入到这种OFDM系统的发射信号中的方法，用于基于 的分散导频，多天线OFDM发射机和OFDM接收机。 在这种情况下，本发明的特定方法是在单发射机情况下保持相同的SP模式，以将导频划分成与发射机（发射天线）一样多的子集，并且将这些子集两者交织 在时间和频率上。 以这种方式，减少了相同子集的导频的粒度。 这提供了设计分散导频模式和估计信道特性的更高精度的更大灵活性。