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公开(公告)号：US08166815B2
公开(公告)日：2012-05-01
申请号：US12382274
申请日：2009-03-12
申请人： Kenichi Tochi , Takao Noguchi , Ken Unno , Kazuya Maekawa
发明人： Kenichi Tochi , Takao Noguchi , Ken Unno , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5642
摘要： An angular velocity sensor element is provided which is capable of preventing even transmission of sudden externally-applied vibration to an element portion by absorbing the vibration. An angular velocity sensor element 2 according to the present embodiment has a fixing portion 21 in the form of a frame, an element portion 20 disposed in the frame of the fixing portion 21 and having vibrating arms 21 to 24 in a drive system and a detection system, and a connecting portion 25 formed as a fixed-fixed beam having its both ends connected to the fixing portion 21 and having its intermediate portion connected to the element portion 20.
摘要翻译： 提供一种角速度传感器元件，其能够通过吸收振动来防止突然的外部施加的振动到元件部分的传播。 根据本实施例的角速度传感器元件2具有框架形式的固定部分21，设置在固定部分21的框架中并且在驱动系统中具有振动臂21至24的元件部分20和检测 系统，以及形成为固定梁的连接部分25，其两端连接到固定部分21，并且其中间部分连接到元件部分20。
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公开(公告)号：US08056414B2
公开(公告)日：2011-11-15
申请号：US12078031
申请日：2008-03-26
申请人： Takao Noguchi , Kenichi Tochi , Ken Unno , Tatsuo Namikawa
发明人： Takao Noguchi , Kenichi Tochi , Ken Unno , Tatsuo Namikawa
CPC分类号： G01C19/5607
摘要： An angular velocity sensor of a horizontally located type, in which influence of a translational acceleration applied thereto from a lateral direction is readily removed and a fixed portion thereof is easily fixed, is provided. It includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm portion and a lower detection arm portion respectively connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion with the upper detection arm portion in between. The fixed portion includes one or more slits extending at least in a direction intersecting with the extending direction of the upper detection arm portion.
摘要翻译： 提供了一种水平定位型的角速度传感器，其中容易地去除从横向施加到其上的平移加速度的影响，并且其固定部分容易固定。 它包括固定到壳体的传感器元件支撑部分的顶表面的固定部分，上检测臂部分和下检测臂部分，其分别连接到彼此相对的侧面上的固定部分，并且沿平行于 传感器元件支撑部分的顶表面和连接到固定部分的上部振动臂，上部检测臂部分在其间。 固定部分包括至少沿与上检测臂部分的延伸方向交叉的方向延伸的一个或多个狭缝。
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公开(公告)号：US20090165556A1
公开(公告)日：2009-07-02
申请号：US12318329
申请日：2008-12-24
申请人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
发明人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5607
摘要： An angular velocity sensing element is provided, which is able to prevent breakage of an oscillation arm even when an excessively large shock is given. An angular velocity sensing element 2 according to the present embodiment includes oscillation arms 22, 23 and 24 formed of a semiconductor material, and a stopper member provided to limit the oscillation range of the oscillation arms. As such a stopper member, a first stopper member 25 is provided, for example, which limits the oscillation range of the oscillation arms at least within a single plane of the arms. Fixing portions 21, the oscillation arms 22, 23 and 24 and the first stopper member 25 are integrally formed by processing a semiconductor material, such as silicon.
摘要翻译： 提供了一种角速度感测元件，其即使在给出过大的冲击时也能够防止振动臂的破损。 根据本实施例的角速度感测元件2包括由半导体材料形成的振荡臂22,23和24以及用于限制振荡臂的振荡范围的止动构件。 作为这样的止动构件，例如设置有至少在臂的单个平面内限制摆动臂的摆动范围的第一止动构件25。 固定部21，摆动臂22,23,24以及第一止动构件25通过加工硅等半导体材料而一体形成。
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公开(公告)号：US07173361B2
公开(公告)日：2007-02-06
申请号：US11028992
申请日：2005-01-03
申请人： Hisatoshi Saito , Takao Noguchi , Kenji Inoue
发明人： Hisatoshi Saito , Takao Noguchi , Kenji Inoue
CPC分类号： H03H9/02094 , H03H9/175 , H03H9/176
摘要： A film bulk acoustic wave resonator of the invention includes a substrate; a resonant structure provided on the substrate constituted by a lower electrode, a piezoelectric film and an upper electrode; and an acoustic multilayer of a plurality of reflective films provided between the substrate and the resonant structure. At least one of the reflective films of the acoustic multilayer has a specified crystal plane orientation, and an X-ray rocking curve full width at half maximum that is preferably not greater than 10 degrees, and more preferably is not greater than 3 degrees. This makes it possible to obtain better resonance characteristics than in the case of the prior art, by increasing the efficiency with which bulk waves propagating towards the substrate are reflected.
摘要翻译： 本发明的薄膜体声波谐振器包括：基板; 设置在由下电极，压电膜和上电极构成的基板上的谐振结构; 以及设置在所述基板和所述谐振结构之间的多个反射膜的声学多层。 声学多层反射膜中的至少一个具有特定的晶面取向，并且X射线摇摆曲线半峰全宽度优选不大于10度，更优选不大于3度。 这使得通过提高向衬底传播的体波的效率被反射，可以获得比现有技术的情况更好的谐振特性。
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公开(公告)号：US20050093157A1
公开(公告)日：2005-05-05
申请号：US10786776
申请日：2004-02-24
申请人： Takao Noguchi , Hisatoshi Saito
发明人： Takao Noguchi , Hisatoshi Saito
IPC分类号： H01L41/09 , H01L21/8246 , H01L27/105 , H01L29/15 , H01L29/20 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H01L41/39 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/76 , H01L31/062 , H01L21/44 , H01L23/52
CPC分类号： H03H9/02094 , H01L29/152 , H01L29/2003 , H01L2924/0002 , H03H3/02 , H03H9/174 , H03H9/175 , H01L2924/00
摘要： An electronic device includes a substrate, a lower conductive film formed on the substrate and a functional film formed on the lower conductive film. In the present invention, an adhesion of the lower conductive film on the side of the substrate is greater than or equal to 0.1 N/cm. The electronic device according to this invention exhibits high mechanical strength that makes it very reliable. This is because the invention prevents the physical exfoliation of the lower conductive film that is apt to occur during or after fabrication of the electronic device when the adhesion of the lower conductive film is lower than 0.1 N/cm.
摘要翻译： 电子设备包括基板，形成在基板上的下导电膜和形成在下导电膜上的功能膜。 在本发明中，下导电膜在基板一侧的粘合力大于或等于0.1N / cm。 根据本发明的电子设备表现出高机械强度，使其非常可靠。 这是因为，当下导电膜的粘合力低于0.1N / cm时，本发明防止在电子器件制造期间或之后容易发生的下导电膜的物理剥离。
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公开(公告)号：US06258459B1
公开(公告)日：2001-07-10
申请号：US09300452
申请日：1999-04-28
申请人： Takao Noguchi , Yoshihiko Yano
发明人： Takao Noguchi , Yoshihiko Yano
IPC分类号： B32B904
摘要： The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.
摘要翻译： 本发明的第一个目的是提供能够容易地获得具有（100）取向（001）取向或（111）取向的钙钛矿氧化物薄膜的方法，本发明的第二个目的是提供一种多层薄膜 膜包含具有良好结晶度的单向取向金属薄膜。 根据本发明第一实施方案的多层薄膜包含缓冲层和存在于其上的钙钛矿氧化物薄膜。 缓冲层与钙钛矿氧化物薄膜的界面由{111}面平面构成。 基本平行于面平面，存在钙钛矿氧化物薄膜的立方晶体，菱方晶，四方晶或正交晶体的{110}面，正方晶或正交晶体的{101}面或 正交晶体。 根据本发明的第二实施方式的多层薄膜包括作为立方体（100）单向取向外延膜的金属薄膜和在缓冲层的界面上存在{111}面平面的缓冲层 与金属薄膜接触。
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7.发明授权
公开(公告)号：US5919515A
公开(公告)日：1999-07-06
申请号：US855444
申请日：1997-05-13
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B29/22 , C23C14/00 , C23C14/02 , C23C14/08 , C30B23/02 , H01G4/33 , H01L21/283 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , C23C14/24
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/024 , C30B23/02 , C30B29/22
摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.
摘要翻译： 在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是 形成，优选地具有外延氧化膜或导电外延膜之间。 适用于具有MFIS和MFMIS结构的门型非易失性存储器件。
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公开(公告)号：US4149913A
公开(公告)日：1979-04-17
申请号：US732642
申请日：1976-10-15
申请人： Kazuo Kunioka , Takao Noguchi , Hiroaki Sato
发明人： Kazuo Kunioka , Takao Noguchi , Hiroaki Sato
摘要： In rapidly cooling a large diameter metal pipe for quenching purposes, the essential requirements for ensuring uniform cooling of the pipe, namely, the jet velocity and the dip angle and transverse angle of jets of the cooling water directed against the surface of the pipe from a large number of spray nozzles contained in each of a first and second ring header encircling the pipe, and the distance between the circumferential line defined on the pipe by connecting the points of impingement onto the pipe surface of the water jets sprayed in the direction of the second header from the spray nozzles of the first header and the similar circumferential line defined on the pipe by connecting the points of impingement onto the pipe surface of the water jets sprayed in the direction of the first header from the spray nozzles of the rear second header, are specified with numerical values.
摘要翻译： 在快速冷却用于淬火目的的大直径金属管道时，确保管道的均匀冷却的基本要求，即喷射速度以及从管道表面引导的冷却水的喷嘴的倾角和横向角度 包含在环绕管道的第一和第二环形头部中的每一个中的大量喷嘴以及在管道上限定的周向线之间的距离，通过将冲击点连接到沿着喷射方向喷射的喷水管的管表面上 通过将冲击点连接到沿着第一集管的方向喷射的喷水管的管表面上，从第二集管的喷嘴喷射第二集管的喷嘴和第二集管的喷嘴的第二集管， ，用数值表示。
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公开(公告)号：US08127609B2
公开(公告)日：2012-03-06
申请号：US12318329
申请日：2008-12-24
申请人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
发明人： Ken Unno , Takao Noguchi , Kenichi Tochi , Kazuya Maekawa
IPC分类号： G01C19/56
CPC分类号： G01C19/5607
摘要： An angular velocity sensing element is provided, which is able to prevent breakage of an oscillation arm even when an excessively large shock is given. An angular velocity sensing element 2 according to the present embodiment includes oscillation arms 22, 23 and 24 formed of a semiconductor material, and a stopper member provided to limit the oscillation range of the oscillation arms. As such a stopper member, a first stopper member 25 is provided, for example, which limits the oscillation range of the oscillation arms at least within a single plane of the arms. Fixing portions 21, the oscillation arms 22, 23 and 24 and the first stopper member 25 are integrally formed by processing a semiconductor material, such as silicon.
摘要翻译： 提供了一种角速度感测元件，其即使在给出过大的冲击时也能够防止振动臂的破损。 根据本实施例的角速度感测元件2包括由半导体材料形成的振荡臂22,23和24以及用于限制振荡臂的振荡范围的止动构件。 作为这样的止动构件，例如设置有至少在臂的单个平面内限制摆动臂的摆动范围的第一止动构件25。 固定部21，摆动臂22,23,24以及第一止动构件25通过加工硅等半导体材料而一体形成。
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公开(公告)号：US07636994B2
公开(公告)日：2009-12-29
申请号：US11360394
申请日：2006-02-24
申请人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
发明人： Kenichi Tochi , Masahiro Miyazaki , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Hirofumi Sasaki
CPC分类号： H01L41/332 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49155
摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
摘要翻译： 本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧 。 因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。 也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。 这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。
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