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    Multilayer thin film
    4.
    发明授权
    Multilayer thin film 有权
    多层薄膜

    公开(公告)号：US06258459B1

    公开(公告)日：2001-07-10

    申请号：US09300452

    申请日：1999-04-28

    申请人： Takao Noguchi ,  Yoshihiko Yano

    发明人： Takao Noguchi ,  Yoshihiko Yano

    IPC分类号： B32B904

    CPC分类号： B32B15/04 ,  C30B23/02 ,  C30B29/32

    摘要： The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.

    摘要翻译： 本发明的第一个目的是提供能够容易地获得具有（100）取向（001）取向或（111）取向的钙钛矿氧化物薄膜的方法，本发明的第二个目的是提供一种多层薄膜 膜包含具有良好结晶度的单向取向金属薄膜。 根据本发明第一实施方案的多层薄膜包含缓冲层和存在于其上的钙钛矿氧化物薄膜。 缓冲层与钙钛矿氧化物薄膜的界面由{111}面平面构成。 基本平行于面平面，存在钙钛矿氧化物薄膜的立方晶体，菱方晶，四方晶或正交晶体的{110}面，正方晶或正交晶体的{101}面或 正交晶体。 根据本发明的第二实施方式的多层薄膜包括作为立方体（100）单向取向外延膜的金属薄膜和在缓冲层的界面上存在{111}面平面的缓冲层 与金属薄膜接触。

    Method for forming oxide thin film and the treatment of silicon substrate
    6.
    发明授权
    Method for forming oxide thin film and the treatment of silicon substrate 失效
    用于形成氧化物薄膜的方法和硅衬底的处理

    公开(公告)号：US5810923A

    公开(公告)日：1998-09-22

    申请号：US644829

    申请日：1996-05-10

    申请人： Yoshihiko Yano ,  Takao Noguchi ,  Katsuto Nagano

    发明人： Yoshihiko Yano ,  Takao Noguchi ,  Katsuto Nagano

    IPC分类号： C30B23/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  C03B25/02

    CPC分类号： H01L21/28194 ,  C30B23/02 ,  C30B29/22 ,  H01L21/316 ,  H01L29/517 ,  H01L29/66575

    摘要： The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

    摘要翻译： 本发明提供了一种组成为Zr1-xRxO2-δ的外延膜形式的氧化物薄膜，其中R是含有Y，x = 0至0.75，优选x = 0.20至0.50的稀土金属，优选x = 0.20至0.50，形成于 单晶硅衬底的表面。 薄膜的摇摆曲线半值宽度可达1.50度。 该膜在500nm的参考长度上具有高达0.60nm的十点平均粗糙度Rz。 组成ZrO2的外延膜由单向取向晶体构成。 当在用作缓冲膜的氧化物薄膜上形成功能膜时，可以获得质量良好的外延生长的功能膜。 特别是当单晶基板在其平面内旋转时，获得具有10cm 2或更大面积的均匀高质量的氧化物薄膜。

    Multilayer thin film and its fabrication process as well as electron device
    7.
    发明授权
    Multilayer thin film and its fabrication process as well as electron device 有权
    多层薄膜及其制造工艺以及电子器件

    公开(公告)号：US06709776B2

    公开(公告)日：2004-03-23

    申请号：US09842805

    申请日：2001-04-27

    申请人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

    发明人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

    IPC分类号： B32B900

    CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/2495

    摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

    摘要翻译： 本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。 为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜，其制造工艺和电子器件。

    Process for preparing ferroelectric thin films
    8.
    发明授权
    Process for preparing ferroelectric thin films 有权
    制备铁电薄膜的工艺

    公开(公告)号：US06387712B1

    公开(公告)日：2002-05-14

    申请号：US09453505

    申请日：1999-12-03

    申请人： Yoshihiko Yano ,  Takao Noguchi

    发明人： Yoshihiko Yano ,  Takao Noguchi

    IPC分类号： H01L2100

    CPC分类号： C23C14/08 ,  C23C14/0026 ,  H01L21/31691 ,  H01L29/516 ,  Y10S438/909

    摘要： In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

    摘要翻译： 在包含在基板上形成的铁电薄膜的薄膜结构体中，铁电薄膜含有原子比为0.8 <=（Pb + Rn）/ 2的稀土元素（Rn），Pb，Ti和O。 Ti <= 1.3和0.5 <= Pb /（Pb + Rn）<= 0.99，具有钙钛矿型晶体结构，为（001）单向取向或（001）取向和（100）取向的混合物。 铁电薄膜可以形成在硅（100）衬底上，通常通过在真空室中蒸发氧化铅和TiO x，同时在其中引入氧化气体。