发明授权
- 专利标题： Thin film piezoelectric device
- 专利标题（中）： 薄膜压电元件
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申请号： US09558586申请日： 2000-04-26
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公开(公告)号： US06198208B1公开(公告)日： 2001-03-06
- 发明人: Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
- 申请人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
- 优先权： JP11-139997 19990520
- 主分类号： H01L4104
- IPC分类号： H01L4104
摘要：
A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
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