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    Magnetoresistive effect element and magnetic memory
    1.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US08750029B2

    公开(公告)日：2014-06-10

    申请号：US13233420

    申请日：2011-09-15

    Applicant: Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    Inventor： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Hiroaki Yoda

    IPC: G11C11/15 ,  H01L43/08

    CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/08

    Abstract: According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

    Abstract translation: 根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

    MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE
    2.
    发明申请
    MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
    磁性元件和非易失性存储器件

    公开(公告)号：US20120243308A1

    公开(公告)日：2012-09-27

    申请号：US13227959

    申请日：2011-09-08

    Applicant: Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    Inventor： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

    IPC: G11C11/15 ,  H01L29/82

    CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    Abstract: According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

    Abstract translation: 根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。 中间互连设置在导电层之间。 第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。 通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    Magnetoresistive element and magnetic memory
    10.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08686521B2

    公开(公告)日：2014-04-01

    申请号：US12716582

    申请日：2010-03-03

    Applicant: Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

    Inventor： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC: H01L29/82

    CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

    Abstract translation: 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

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