Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
- Patent Title (中): 磁阻元件和磁记忆体
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Application No.: US12716582Application Date: 2010-03-03
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Publication No.: US08686521B2Publication Date: 2014-04-01
- Inventor: Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
- Applicant: Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-082741 20090330
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.
Public/Granted literature
- US20100244163A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2010-09-30
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