Nonvolatile optical memory element, memory device, and reading method thereof
    1.
    发明授权
    Nonvolatile optical memory element, memory device, and reading method thereof 有权
    非易失性光存储元件,存储器件及其读取方法

    公开(公告)号:US08270198B2

    公开(公告)日:2012-09-18

    申请号:US12844758

    申请日:2010-07-27

    IPC分类号: G11C13/06

    CPC分类号: G11C13/06

    摘要: A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively. By applying an electric pulse and an optical pulse to the nonvolatile optical memory element, it is possible to effectively read recorded data according to a magnetization direction of the ferromagnetic body.

    摘要翻译: 其中在半导体上设置铁磁体的非易失性光学存储元件引起这样的问题,即在铁磁体的磁化被光读出的情况下,当铁磁体的体积小时,磁光响应变得非常小。 本发明提供了一种存储元件,存储器件和数据读取方法,每种可应用于从非易失性光学存储元件读取数据。 在具有将铁磁体设置在与光波导连接的半导体上的结构的非易失性光学存储元件中,电子通过铁磁体注入到半导体中,使得根据磁化自旋极化的电子 铁氧体的方向被注入到半导体中,从而扩大了有效发生光磁效应的区域。 通过向非易失性光学存储元件施加电脉冲和光脉冲,可以根据铁磁体的磁化方向有效地读取记录的数据。

    Magnetic tunnel junction device and memory device including the same
    2.
    发明授权
    Magnetic tunnel junction device and memory device including the same 有权
    磁隧道结装置及包括其的存储装置

    公开(公告)号:US07884403B2

    公开(公告)日:2011-02-08

    申请号:US10591947

    申请日:2005-03-10

    申请人: Shinji Yuasa

    发明人: Shinji Yuasa

    IPC分类号: H01L27/108 G11C11/14

    摘要: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10−8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23. The Co layer 21 is provided so as to increase the coercive force of the upper electrode 23 in order to realize an antiparallel magnetization alignment.

    摘要翻译: 通过以下步骤制备的样品的微细加工形成的Fe(001)/ MgO(001)/ Fe(001)MTJ装置来增加MRAM的输出电压。 制备单晶MgO(001)基板11。 在室温下在MgO(001)种子层15上生长厚度为50nm的外延Fe(001)下电极(第一电极)17,然后在超高真空(2×10-8Pa)下退火, 在350℃下,使用MgO电子束蒸发,在室温下在Fe(001)下电极(第一电极)上外延形成厚度为2nm的MgO(001)势垒层21。 然后在室温下在MgO(001)阻挡层21上形成厚度为10nm的Fe(001)上电极(第二电极)。 随后在Fe(001)上电极(第二电极)23上沉积厚度为10nm的Co层21,Co层21设置成增加上电极的矫顽力 23以实现反平行磁化对准。

    Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element
    3.
    发明授权
    Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element 有权
    微波传输线集成微波发生元件和微波传输线集成微波检测元件

    公开(公告)号:US07764136B2

    公开(公告)日:2010-07-27

    申请号:US11886083

    申请日:2006-03-17

    IPC分类号: H03K3/313 H01L29/82

    摘要: A strip line integrated microwave generating element and a microwave detecting element comprises a signal electrode and a ground electrode. The element has a magnetic tunnel junction structure which includes a magnetization fixed layer, a MgO tunnel barrier layer, and a magnetization free layer. The magnetization free layer is 200 nm square or smaller in a cross-sectional area. The magnetization fixed layer is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other. The element is smaller than the electrodes and mounted on a part of the signal electrode or the ground electrode. A MR ratio of the element is of 100% or more. A resistance value of the element is from 50Ω to 300Ω. The resistance of the element is matched with an impedance of the microwave transmission line.

    摘要翻译: 带状集成微波发生元件和微波检测元件包括信号电极和接地电极。 元件具有包括磁化固定层,MgO隧道势垒层和无磁化层的磁性隧道结结构。 磁化自由层的横截面积为200nm以下。 磁化固定层与信号电极和接地电极中的任一个接触,而元件的无磁化层与另一个接触。 元件比电极小,并且安装在信号电极或接地电极的一部分上。 元件的MR比率为100%以上。 元素的电阻值为50&OHgr; 至300&OHgr; 元件的电阻与微波传输线的阻抗相匹配。

    Magnetic tunnel junction device and memory device including the same
    4.
    发明申请
    Magnetic tunnel junction device and memory device including the same 审中-公开
    磁隧道结装置及包括其的存储装置

    公开(公告)号:US20100181632A1

    公开(公告)日:2010-07-22

    申请号:US12659827

    申请日:2010-03-23

    申请人: Shinji Yuasa

    发明人: Shinji Yuasa

    IPC分类号: H01L27/20 H01L21/00

    摘要: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10−8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23. The Co layer 21 is provided so as to increase the coercive force of the upper electrode 23 in order to realize an antiparallel magnetization alignment.

    摘要翻译: 通过以下步骤制备的样品的微细加工形成的Fe(001)/ MgO(001)/ Fe(001)MTJ装置来增加MRAM的输出电压。 制备单晶MgO(001)基板11。 在室温下在MgO(001)种子层15上生长厚度为50nm的外延Fe(001)下电极(第一电极)17,然后在超高真空(2×10-8Pa)下退火, 在350℃下,使用MgO电子束蒸发,在室温下在Fe(001)下电极(第一电极)上外延形成厚度为2nm的MgO(001)势垒层21。 然后在室温下在MgO(001)阻挡层21上形成厚度为10nm的Fe(001)上电极(第二电极)。 随后在Fe(001)上电极(第二电极)23上沉积厚度为10nm的Co层21,Co层21设置成增加上电极的矫顽力 23以实现反平行磁化对准。

    Random number generating device
    7.
    发明授权
    Random number generating device 有权
    随机数生成装置

    公开(公告)号:US08521795B2

    公开(公告)日:2013-08-27

    申请号:US12452012

    申请日:2008-03-24

    IPC分类号: G06F7/58

    CPC分类号: G06F7/588

    摘要: A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.

    摘要翻译: 构造随机数生成装置,使其具有改善的随机数生成速率并且容易地构造紧凑电路。 该随机数生成装置包括具有由磁化自由层,中间层和磁化固定层构成的三层的磁致电阻元件,并且具有取决于磁化自由层的磁化排列和磁化固定的至少两个电阻值 层,其中磁阻元件经受施加磁化电流,使得磁化自由层的反转概率为0和1之间的值,磁阻元件的电阻值通过该值提取为随机数。

    AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE
    10.
    发明申请
    AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE 审中-公开
    放大器使用磁电阻器件

    公开(公告)号:US20090322419A1

    公开(公告)日:2009-12-31

    申请号:US12506201

    申请日:2009-07-20

    IPC分类号: H03F1/00

    摘要: An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.

    摘要翻译: 放大装置包括具有无磁性层的磁阻装置,具有比无磁性层的磁矩大的磁矩的磁性固定层以及设置在磁性自由层和磁性固定层之间的中间层。 放大装置具有设置在磁阻装置的磁性自由层侧的第一电极层和设置在磁阻装置的磁性固定层侧的第二电极层。 放大装置还包括用于向磁阻装置施加直流偏压的直流偏置电源和负载电阻。 放大装置持续地引起磁性自由层的磁化方向的变化,使得磁阻装置显示负电阻,从而放大输入信号。