公开(公告)号：US08270198B2

公开(公告)日：2012-09-18

申请号：US12844758

申请日：2010-07-27

申请人： Vadym Zayets ,  Koji Ando ,  Shinji Yuasa ,  Hidekazu Saito

发明人： Vadym Zayets ,  Koji Ando ,  Shinji Yuasa ,  Hidekazu Saito

IPC分类号： G11C13/06

CPC分类号： G11C13/06

摘要： A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively. By applying an electric pulse and an optical pulse to the nonvolatile optical memory element, it is possible to effectively read recorded data according to a magnetization direction of the ferromagnetic body.

摘要翻译： 其中在半导体上设置铁磁体的非易失性光学存储元件引起这样的问题，即在铁磁体的磁化被光读出的情况下，当铁磁体的体积小时，磁光响应变得非常小。 本发明提供了一种存储元件，存储器件和数据读取方法，每种可应用于从非易失性光学存储元件读取数据。 在具有将铁磁体设置在与光波导连接的半导体上的结构的非易失性光学存储元件中，电子通过铁磁体注入到半导体中，使得根据磁化自旋极化的电子 铁氧体的方向被注入到半导体中，从而扩大了有效发生光磁效应的区域。 通过向非易失性光学存储元件施加电脉冲和光脉冲，可以根据铁磁体的磁化方向有效地读取记录的数据。

公开(公告)号：US07884403B2

公开(公告)日：2011-02-08

申请号：US10591947

申请日：2005-03-10

申请人： Shinji Yuasa

发明人： Shinji Yuasa

IPC分类号： H01L27/108 ,  G11C11/14

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/132 ,  H01F10/3254 ,  H01L27/11507 ,  H01L27/22 ,  H01L27/222 ,  H01L27/228 ,  H01L28/55 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10−8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23. The Co layer 21 is provided so as to increase the coercive force of the upper electrode 23 in order to realize an antiparallel magnetization alignment.

摘要翻译： 通过以下步骤制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ装置来增加MRAM的输出电压。 制备单晶MgO（001）基板11。 在室温下在MgO（001）种子层15上生长厚度为50nm的外延Fe（001）下电极（第一电极）17，然后在超高真空（2×10-8Pa）下退火， 在350℃下，使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成厚度为2nm的MgO（001）势垒层21。 然后在室温下在MgO（001）阻挡层21上形成厚度为10nm的Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）23上沉积厚度为10nm的Co层21，Co层21设置成增加上电极的矫顽力 23以实现反平行磁化对准。

公开(公告)号：US07764136B2

公开(公告)日：2010-07-27

申请号：US11886083

申请日：2006-03-17

申请人： Yoshishige Suzuki ,  Shinji Yuasa ,  Akio Fukushima ,  Ashwin Tulapurkar

发明人： Yoshishige Suzuki ,  Shinji Yuasa ,  Akio Fukushima ,  Ashwin Tulapurkar

IPC分类号： H03K3/313 ,  H01L29/82

CPC分类号： H01L43/08 ,  H01P11/003 ,  H01Q23/00 ,  H03B15/006

摘要： A strip line integrated microwave generating element and a microwave detecting element comprises a signal electrode and a ground electrode. The element has a magnetic tunnel junction structure which includes a magnetization fixed layer, a MgO tunnel barrier layer, and a magnetization free layer. The magnetization free layer is 200 nm square or smaller in a cross-sectional area. The magnetization fixed layer is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other. The element is smaller than the electrodes and mounted on a part of the signal electrode or the ground electrode. A MR ratio of the element is of 100% or more. A resistance value of the element is from 50Ω to 300Ω. The resistance of the element is matched with an impedance of the microwave transmission line.

摘要翻译： 带状集成微波发生元件和微波检测元件包括信号电极和接地电极。 元件具有包括磁化固定层，MgO隧道势垒层和无磁化层的磁性隧道结结构。 磁化自由层的横截面积为200nm以下。 磁化固定层与信号电极和接地电极中的任一个接触，而元件的无磁化层与另一个接触。 元件比电极小，并且安装在信号电极或接地电极的一部分上。 元件的MR比率为100％以上。 元素的电阻值为50＆OHgr; 至300＆OHgr; 元件的电阻与微波传输线的阻抗相匹配。

公开(公告)号：US20100181632A1

公开(公告)日：2010-07-22

申请号：US12659827

申请日：2010-03-23

申请人： Shinji Yuasa

发明人： Shinji Yuasa

IPC分类号： H01L27/20 ,  H01L21/00

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/132 ,  H01F10/3254 ,  H01L27/11507 ,  H01L27/22 ,  H01L27/222 ,  H01L27/228 ,  H01L28/55 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10−8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23. The Co layer 21 is provided so as to increase the coercive force of the upper electrode 23 in order to realize an antiparallel magnetization alignment.

摘要翻译： 通过以下步骤制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ装置来增加MRAM的输出电压。 制备单晶MgO（001）基板11。 在室温下在MgO（001）种子层15上生长厚度为50nm的外延Fe（001）下电极（第一电极）17，然后在超高真空（2×10-8Pa）下退火， 在350℃下，使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成厚度为2nm的MgO（001）势垒层21。 然后在室温下在MgO（001）阻挡层21上形成厚度为10nm的Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）23上沉积厚度为10nm的Co层21，Co层21设置成增加上电极的矫顽力 23以实现反平行磁化对准。

公开(公告)号：US20100055502A1

公开(公告)日：2010-03-04

申请号：US12547978

申请日：2009-08-26

申请人： Hitoshi KUBOTA ,  Akio FUKUSHIMA ,  Kei YAKUSHIJI ,  Shinji YUASA ,  Koji ANDO ,  Satoshi YAKATA

发明人： Hitoshi KUBOTA ,  Akio FUKUSHIMA ,  Kei YAKUSHIJI ,  Shinji YUASA ,  Koji ANDO ,  Satoshi YAKATA

IPC分类号： G11B5/66 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A tunneling magnetoresistive device includes: a fixed layer that includes a ferromagnetic material; a tunneling insulating film that is provided in contact with the fixed layer; and a free layer that includes a first ferromagnetic film provided in contact with the tunneling insulating film, a second ferromagnetic film whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film, and a conductive film interposed between the first ferromagnetic film and the second ferromagnetic film.

摘要翻译： 隧道磁阻器件包括：固定层，其包括铁磁材料; 设置成与固定层接触的隧道绝缘膜; 以及自由层，其包括与所述隧道绝缘膜接触而设置的第一铁磁性膜，其磁化平行于所述第一铁磁膜的磁化的第二铁磁性膜，以及介于所述第一铁磁性膜与所述第二铁磁膜之间的导电性膜 铁磁膜。

公开(公告)号：US08680632B2

公开(公告)日：2014-03-25

申请号：US13310154

申请日：2011-12-02

申请人： Tadaomi Daibou ,  Junichi Ito ,  Tadashi Kai ,  Minoru Amano ,  Hiroaki Yoda ,  Terunobu Miyazaki ,  Shigemi Mizukami ,  Koji Ando ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Akio Fukushima ,  Taro Nagahama ,  Takahide Kubota

发明人： Tadaomi Daibou ,  Junichi Ito ,  Tadashi Kai ,  Minoru Amano ,  Hiroaki Yoda ,  Terunobu Miyazaki ,  Shigemi Mizukami ,  Koji Ando ,  Kay Yakushiji ,  Shinji Yuasa ,  Hitoshi Kubota ,  Akio Fukushima ,  Taro Nagahama ,  Takahide Kubota

IPC分类号： H01L29/82 ,  G11C11/00

CPC分类号： H01L43/10 ,  H01L23/528 ,  H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x

摘要翻译： 根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％）， 。 第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

公开(公告)号：US08521795B2

公开(公告)日：2013-08-27

申请号：US12452012

申请日：2008-03-24

申请人： Akio Fukushima ,  Hitoshi Kubota ,  Kay Yakushiji ,  Shinji Yuasa ,  Koji Ando

发明人： Akio Fukushima ,  Hitoshi Kubota ,  Kay Yakushiji ,  Shinji Yuasa ,  Koji Ando

IPC分类号： G06F7/58

CPC分类号： G06F7/588

摘要： A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.

摘要翻译： 构造随机数生成装置，使其具有改善的随机数生成速率并且容易地构造紧凑电路。 该随机数生成装置包括具有由磁化自由层，中间层和磁化固定层构成的三层的磁致电阻元件，并且具有取决于磁化自由层的磁化排列和磁化固定的至少两个电阻值 层，其中磁阻元件经受施加磁化电流，使得磁化自由层的反转概率为0和1之间的值，磁阻元件的电阻值通过该值提取为随机数。

公开(公告)号：US08378437B2

公开(公告)日：2013-02-19

申请号：US12248484

申请日：2008-10-09

申请人： Masahiko Nakayama ,  Kay Yakushiji ,  Sumio Ikegawa ,  Shinji Yuasa ,  Tadashi Kai ,  Toshihiko Nagase ,  Minoru Amano ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Masahiko Nakayama ,  Kay Yakushiji ,  Sumio Ikegawa ,  Shinji Yuasa ,  Tadashi Kai ,  Toshihiko Nagase ,  Minoru Amano ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.

摘要翻译： 磁阻效应元件包括参考层，记录层和非磁性层。 参考层由磁性材料制成，具有垂直于膜表面的不变磁化。 记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。 非磁性层布置在参考层和记录层之间。 临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是 在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

公开(公告)号：US20110094875A1

公开(公告)日：2011-04-28

申请号：US12983514

申请日：2011-01-03

申请人： David D. Djayaprawira ,  Koji Tsunekawa ,  Motonobu Nagai ,  Hiroki Maehara ,  Shinji Yamagata ,  Naoki Watanabe ,  Shinji Yuasa

发明人： David D. Djayaprawira ,  Koji Tsunekawa ,  Motonobu Nagai ,  Hiroki Maehara ,  Shinji Yamagata ,  Naoki Watanabe ,  Shinji Yuasa

IPC分类号： C23C14/06 ,  C23C14/35

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/34 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307 ,  H01L43/08

摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

摘要翻译： 一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层 定向纹理结构。

公开(公告)号：US20090322419A1

公开(公告)日：2009-12-31

申请号：US12506201

申请日：2009-07-20

申请人： Hiroki Maehara ,  Hitoshi Kubota ,  Akio Fukushima ,  Shinji Yuasa ,  Yoshishige Suzuki ,  Yoshinori Nagamine

发明人： Hiroki Maehara ,  Hitoshi Kubota ,  Akio Fukushima ,  Shinji Yuasa ,  Yoshishige Suzuki ,  Yoshinori Nagamine

IPC分类号： H03F1/00

CPC分类号： H01L29/66984 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08

摘要： An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.

摘要翻译： 放大装置包括具有无磁性层的磁阻装置，具有比无磁性层的磁矩大的磁矩的磁性固定层以及设置在磁性自由层和磁性固定层之间的中间层。 放大装置具有设置在磁阻装置的磁性自由层侧的第一电极层和设置在磁阻装置的磁性固定层侧的第二电极层。 放大装置还包括用于向磁阻装置施加直流偏压的直流偏置电源和负载电阻。 放大装置持续地引起磁性自由层的磁化方向的变化，使得磁阻装置显示负电阻，从而放大输入信号。