Invention Application
- Patent Title: MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE
- Patent Title (中): 磁性元件和非易失性存储器件
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Application No.: US13227959Application Date: 2011-09-08
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Publication No.: US20120243308A1Publication Date: 2012-09-27
- Inventor: Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
- Applicant: Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Priority: JP2011-068928 20110325
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L29/82

Abstract:
According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
Public/Granted literature
- US08576616B2 Magnetic element and nonvolatile memory device Public/Granted day:2013-11-05
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