公开(公告)号：US20130285013A1

公开(公告)日：2013-10-31

申请号：US13880706

申请日：2011-10-26

Applicant: Sung-Jin An ,  Dong-Gun Lee ,  Seok-Han Kim

Inventor： Sung-Jin An ,  Dong-Gun Lee ,  Seok-Han Kim

IPC: H01L33/02 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

Abstract: Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

Abstract translation: 提供一种化合物半导体器件及其制造方法。 衬底和石墨烯氧化物层设置在衬底上。 在石墨烯氧化物层上设置第一化合物半导体层。 从由石墨烯氧化物曝光的基板选择性地生长第一化合物半导体层。

公开(公告)号：US20110227000A1

公开(公告)日：2011-09-22

申请号：US13052713

申请日：2011-03-21

Applicant: Rodney S. Ruoff ,  Sung Jin An ,  Meryl Stoller ,  Tryggvi Emilsson ,  Dileep Agnihotri

Inventor： Rodney S. Ruoff ,  Sung Jin An ,  Meryl Stoller ,  Tryggvi Emilsson ,  Dileep Agnihotri

IPC: C01B31/00 ,  H01B1/04 ,  C25D13/02 ,  B82Y30/00

CPC classification number: C25D13/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  C01B32/23 ,  C25D5/18 ,  C25D13/22 ,  H01B1/04 ,  H01G11/36 ,  Y02E60/13

Abstract: Disclosed are methods for preparing electrophoretically deposited graphene based films.

Abstract translation: 公开了制备电泳沉积的基于石墨烯的薄膜的方法。

公开(公告)号：US20060205197A1

公开(公告)日：2006-09-14

申请号：US11202126

申请日：2005-08-11

Applicant: Gyu-Chul Yi ,  Sung-Jin An ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Gyu-Chul Yi ,  Sung-Jin An ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L31/00 ,  H01L21/3205 ,  H01L29/739 ,  H01L21/4763

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L31/0296 ,  H01L31/035281 ,  H01L33/007

Abstract: A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.

Abstract translation: 一种化合物半导体器件及其制造方法。 该方法包括在基板上涂覆多个球形球，并且在其上涂覆有球形球的基底上选择性地生长化合物半导体薄膜。 与外延横向过度生长（ELO）方法相比，可以简化整个过程并且可以在短时间内生长高质量的化合物半导体薄膜。

公开(公告)号：US20070184975A1

公开(公告)日：2007-08-09

申请号：US10598631

申请日：2005-03-11

Applicant: Gyu-chul Yi ,  Sung-Jin An

Inventor： Gyu-chul Yi ,  Sung-Jin An

IPC: B01J27/24

CPC classification number: B82Y30/00 ,  B01J21/063 ,  B01J23/06 ,  B01J23/54 ,  B01J23/66 ,  B01J23/76 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/0238 ,  B01J37/347

Abstract: Disclosed is a photocatalyst having a matrix which comprises a substrate and oxide-based nanomaterial formed on the substrate. The photocatalyst has a ratio of area to volume that is higher than a conventional photocatalyst having the same components, and also has a nano-sized photocatalytic layer. Thereby, it has excellent photolytic properties.

Abstract translation: 公开了一种具有基质的光催化剂，该基质包括在基材上形成的基材和基于氧化物的纳米材料。 光催化剂具有比具有相同组分的常规光催化剂高的面积与体积的比率，并且还具有纳米尺寸的光催化层。 因此，其具有优异的光解性。

公开(公告)号：US20070045660A1

公开(公告)日：2007-03-01

申请号：US11411557

申请日：2006-04-25

Applicant: Gyu Chul Yi ,  Sung-Jin An

Inventor： Gyu Chul Yi ,  Sung-Jin An

IPC: H01L29/732

CPC classification number: H01L33/24 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  H01L33/08 ,  H01L33/18

Abstract: A heterojunction structure composed of a nitride semiconductor thin film and nanostructures epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction, and thus can be advantageously used in light emitting devices.

Abstract translation: 由氮化物半导体薄膜和外延生长的纳米结构构成的异质结结构由于电子穿过纳米尺寸的结而促进了发光效率的特性，因此可有利地用于发光器件中。

公开(公告)号：US07102173B2

公开(公告)日：2006-09-05

申请号：US11074413

申请日：2005-03-08

Applicant: Gyu-Chul Yi ,  Sung Jin An ,  Yong Jin Kim

Inventor： Gyu-Chul Yi ,  Sung Jin An ,  Yong Jin Kim

IPC: H01L31/296

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/02472 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/12 ,  Y10S977/759

Abstract: Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.

Abstract translation: 提供一种氮化物半导体器件及其制造方法。 在该方法中，半导体纳米棒在衬底上垂直生长，然后在具有半导体纳米棒的衬底上沉积氮化物半导体薄膜。 因此，可以在各种廉价的大尺寸基板上沉积高质量的氮化物半导体薄膜。 此外，由于含有半导体纳米棒的氮化物半导体薄膜可以容易地通过纳米棒之间的开口发光，因此可以大大降低内部散射。 因此，氮化物半导体薄膜可以有效地用于诸如发光二极管和电子器件的光学器件中。

公开(公告)号：US08643035B2

公开(公告)日：2014-02-04

申请号：US13489158

申请日：2012-06-05

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US07714337B2

公开(公告)日：2010-05-11

申请号：US11707167

申请日：2007-02-16

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20080315229A1

公开(公告)日：2008-12-25

申请号：US12064235

申请日：2005-08-19

Applicant: Gyu-chul Yi ,  Sung-Jin An

Inventor： Gyu-chul Yi ,  Sung-Jin An

IPC: H01L33/00

CPC classification number: H01L33/42 ,  B82Y20/00 ,  H01L33/387 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5262 ,  Y10S977/762

Abstract: Disclosed herein is an electrical light-emitting device including a transparent conductive nanorod type electrode, in which transparent conductive nanorods grown perpendicular to a light-emitting layer are used as the electrode. Hence, light is not absorbed by the electrode, and tunneling easily occurs due to nanocontact of the nanorods, thus increasing current injection efficiency, and also, total internal reflections decrease. Thereby, the light-emitting device according to this invention has light-emitting properties and luminous efficiency superior to conventional light-emitting devices, including metal electrodes or thin film type transparent electrodes.

Abstract translation: 本发明公开了一种包括透明导电纳米棒型电极的电发光器件，其中垂直于发光层生长的透明导电纳米棒用作电极。 因此，光不被电极吸收，并且由于纳米棒的纳米接触容易发生隧道化，从而增加电流注入效率，并且总内部反射降低。 由此，本发明的发光装置的发光特性和发光效率优于常规的发光装置，包括金属电极或薄膜型透明电极。

公开(公告)号：US20050179052A1

公开(公告)日：2005-08-18

申请号：US10971488

申请日：2004-10-22

Applicant: Gyu Yi ,  Sung-Jin An

Inventor： Gyu Yi ,  Sung-Jin An

IPC: H01L29/06 ,  H01L29/20 ,  H01L31/072 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/24 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  H01L33/08 ,  H01L33/18

Abstract: A heterojunction structure composed of a nitride semiconductor thin film and nanostructures epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction, and thus can be advantageously used in light emitting devices.

Abstract translation: 由氮化物半导体薄膜和外延生长的纳米结构构成的异质结结构由于电子穿过纳米尺寸的结而促进了发光效率的特性，因此可有利地用于发光器件中。