公开(公告)号：US07102173B2

公开(公告)日：2006-09-05

申请号：US11074413

申请日：2005-03-08

Applicant: Gyu-Chul Yi ,  Sung Jin An ,  Yong Jin Kim

Inventor： Gyu-Chul Yi ,  Sung Jin An ,  Yong Jin Kim

IPC: H01L31/296

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/02472 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/12 ,  Y10S977/759

Abstract: Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.

Abstract translation: 提供一种氮化物半导体器件及其制造方法。 在该方法中，半导体纳米棒在衬底上垂直生长，然后在具有半导体纳米棒的衬底上沉积氮化物半导体薄膜。 因此，可以在各种廉价的大尺寸基板上沉积高质量的氮化物半导体薄膜。 此外，由于含有半导体纳米棒的氮化物半导体薄膜可以容易地通过纳米棒之间的开口发光，因此可以大大降低内部散射。 因此，氮化物半导体薄膜可以有效地用于诸如发光二极管和电子器件的光学器件中。

公开(公告)号：US08598607B2

公开(公告)日：2013-12-03

申请号：US12731029

申请日：2010-03-24

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US08643035B2

公开(公告)日：2014-02-04

申请号：US13489158

申请日：2012-06-05

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US07714337B2

公开(公告)日：2010-05-11

申请号：US11707167

申请日：2007-02-16

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20120241757A1

公开(公告)日：2012-09-27

申请号：US13489158

申请日：2012-06-05

Applicant: Jong Wook KIM ,  Hyun Kyong Cho ,  Gyu Chul YI ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook KIM ,  Hyun Kyong Cho ,  Gyu Chul YI ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20100176416A1

公开(公告)日：2010-07-15

申请号：US12731029

申请日：2010-03-24

Applicant: Jong Wook KIM ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook KIM ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20110227000A1

公开(公告)日：2011-09-22

申请号：US13052713

申请日：2011-03-21

Applicant: Rodney S. Ruoff ,  Sung Jin An ,  Meryl Stoller ,  Tryggvi Emilsson ,  Dileep Agnihotri

Inventor： Rodney S. Ruoff ,  Sung Jin An ,  Meryl Stoller ,  Tryggvi Emilsson ,  Dileep Agnihotri

IPC: C01B31/00 ,  H01B1/04 ,  C25D13/02 ,  B82Y30/00

CPC classification number: C25D13/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  C01B32/23 ,  C25D5/18 ,  C25D13/22 ,  H01B1/04 ,  H01G11/36 ,  Y02E60/13

Abstract: Disclosed are methods for preparing electrophoretically deposited graphene based films.

Abstract translation: 公开了制备电泳沉积的基于石墨烯的薄膜的方法。