公开(公告)号：US08598607B2

公开(公告)日：2013-12-03

申请号：US12731029

申请日：2010-03-24

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20100176416A1

公开(公告)日：2010-07-15

申请号：US12731029

申请日：2010-03-24

Applicant: Jong Wook KIM ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook KIM ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20070045660A1

公开(公告)日：2007-03-01

申请号：US11411557

申请日：2006-04-25

Applicant: Gyu Chul Yi ,  Sung-Jin An

Inventor： Gyu Chul Yi ,  Sung-Jin An

IPC: H01L29/732

CPC classification number: H01L33/24 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  H01L33/08 ,  H01L33/18

Abstract: A heterojunction structure composed of a nitride semiconductor thin film and nanostructures epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction, and thus can be advantageously used in light emitting devices.

Abstract translation: 由氮化物半导体薄膜和外延生长的纳米结构构成的异质结结构由于电子穿过纳米尺寸的结而促进了发光效率的特性，因此可有利地用于发光器件中。

公开(公告)号：US08643035B2

公开(公告)日：2014-02-04

申请号：US13489158

申请日：2012-06-05

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US07714337B2

公开(公告)日：2010-05-11

申请号：US11707167

申请日：2007-02-16

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L21/00

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20080272382A1

公开(公告)日：2008-11-06

申请号：US11707167

申请日：2007-02-16

Applicant: Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Ji An ,  Jin Kyoung Yoo ,  Young Joon Hong

Inventor： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Ji An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。