发明申请
- 专利标题： COMPOUND SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： 化合物半导体器件及其制造方法
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申请号： US13880706申请日： 2011-10-26
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公开(公告)号： US20130285013A1公开(公告)日： 2013-10-31
- 发明人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
- 申请人： Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
- 优先权： KR1020100104552 20101026; KRPCT/KR2011/008009 20111026
- 国际申请： PCT/KR11/08009 WO 20111026
- 主分类号： H01L33/02
- IPC分类号： H01L33/02 ; H01L21/02 ; H01L29/06
摘要：
Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
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