公开(公告)号：US10199529B2

公开(公告)日：2019-02-05

申请号：US14979285

申请日：2015-12-22

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Ashok Chaudhari

IPC分类号： H01L21/02 ,  H01L31/18 ,  C30B11/12 ,  C30B29/06 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B19/00 ,  C30B29/52

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.

公开(公告)号：US20170186893A1

公开(公告)日：2017-06-29

申请号：US15457314

申请日：2017-03-13

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Ashok Chaudhari

IPC分类号： H01L31/0236 ,  H01L33/22 ,  H01L33/40 ,  H01L33/24 ,  C30B29/52 ,  H01L31/18 ,  H01L33/00 ,  H01G9/20 ,  C30B23/06 ,  C30B23/02 ,  H01L31/0224 ,  H01L31/0687

CPC分类号： H01L31/02363 ,  C30B19/00 ,  C30B23/025 ,  C30B25/02 ,  C30B25/183 ,  C30B29/52 ,  H01G9/2009 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L31/0687 ,  H01L31/1804 ,  H01L31/1836 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

公开(公告)号：US20140338799A1

公开(公告)日：2014-11-20

申请号：US14450853

申请日：2014-08-04

申请人： Ashok Chaudhari ,  Karin Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari

IPC分类号： H01M4/88 ,  H01M4/90

CPC分类号： H01M4/8882 ,  H01M4/9041 ,  H01M4/92

摘要： Eutectic fuel cells are prepared by depositing a metal-semiconductor eutectic alloy over non-platinum electrodes on a substrate. In some embodiments the electrodes are the same metal and in other cases the electrodes are dissimilar.

摘要翻译： 通过在基板上的非铂电极上沉积金属 - 半导体共晶合金来制备共晶燃料电池。 在一些实施例中，电极是相同的金属，在其他情况下，电极是不相似的。

公开(公告)号：US20140206126A1

公开(公告)日：2014-07-24

申请号：US14224675

申请日：2014-03-25

申请人： Karin Chaudhari ,  Pia Chaudhari ,  Ashok Chaudhari

发明人： Praveen Chaudhari

IPC分类号： H01L21/02

CPC分类号： H01L31/1804 ,  C30B11/12 ,  C30B23/025 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/02653 ,  H01L31/0216 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0475 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/18

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

摘要翻译： 公开了从包含金属和半导体的共晶合金制造半导体膜的方法。 通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。 具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。 这样的电影可以广泛应用于光伏和显示技术。

公开(公告)号：US08491718B2

公开(公告)日：2013-07-23

申请号：US12903750

申请日：2010-10-13

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari

IPC分类号： C30B25/00

CPC分类号： H01L31/1804 ,  C30B11/12 ,  C30B23/025 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/02653 ,  H01L31/0216 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0475 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/18

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

公开(公告)号：US09054249B2

公开(公告)日：2015-06-09

申请号：US12774465

申请日：2010-05-05

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari

IPC分类号： C30B25/02 ,  H01L31/0392 ,  C30B11/12 ,  H01L21/02 ,  C03C17/36 ,  C23C14/02 ,  C23C14/18 ,  C23C14/58 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/068

CPC分类号： H01L31/0392 ,  C03C17/3618 ,  C03C17/3636 ,  C03C17/3649 ,  C03C17/3668 ,  C03C17/3678 ,  C03C2218/15 ,  C23C14/025 ,  C23C14/18 ,  C23C14/5873 ,  C30B11/12 ,  C30B25/02 ,  H01L21/02653 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24372 ,  Y10T428/24421

摘要： A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

摘要翻译： 公开了从包含金属和半导体的共晶合金制造半导体膜的方法。 通过非均相成核，所述膜在相对便宜的缓冲基底（例如玻璃）上以沉积温度沉积。 具体地说，所述膜在所述沉积温度下以固定温度气相沉积，其中所述沉积温度高于所述共晶合金的共晶温度，并低于衬底软化的温度。 这样的电影可以广泛应用于光伏和显示技术。

公开(公告)号：US20140331915A1

公开(公告)日：2014-11-13

申请号：US14341433

申请日：2014-07-25

申请人： Karin Chauchari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Jifeng Liu

IPC分类号： C30B13/24 ,  C30B13/34 ,  C30B29/06 ,  H01L21/02

CPC分类号： C30B13/24 ,  C03B29/06 ,  C30B13/34 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/02672 ,  H01L21/02675 ,  H01L21/02691 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays

摘要翻译： 廉价的半导体通过在廉价的衬底上沉积单晶或大晶粒硅来制造。 这些半导体在足够低的温度（例如低于玻璃熔点的温度）下生产。 所生产的半导体适用于诸如光电或显示器的半导体器件

公开(公告)号：US10199518B2

公开(公告)日：2019-02-05

申请号：US15457314

申请日：2017-03-13

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Ashok Chaudhari

IPC分类号： C30B25/02 ,  H01L31/0236 ,  H01L31/0687 ,  H01L31/18 ,  H01G9/20 ,  C30B23/02 ,  C30B29/52 ,  C30B19/00 ,  C30B25/18 ,  H01L21/02

摘要： A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

公开(公告)号：US09059371B2

公开(公告)日：2015-06-16

申请号：US13155508

申请日：2011-06-08

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari

IPC分类号： H01L39/24

CPC分类号： H01L39/2483

摘要： The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.

摘要翻译： 本发明涉及增加铜酸盐超导体中的临界电流密度。 临界电流密度的这种增强包括使用波函数对称性并且通过使用与存在于...中的d波对称相关联的半整数涡旋来限制Abrikosov（A）涡流，约瑟夫森（J）涡流或阿布里科索夫约瑟夫森（AJ）涡旋的运动 晶界。

公开(公告)号：US08916455B2

公开(公告)日：2014-12-23

申请号：US14341433

申请日：2014-07-25

申请人： Karin Chaudhari ,  Ashok Chaudhari ,  Pia Chaudhari

发明人： Praveen Chaudhari ,  Jifeng Liu

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C03B29/06

CPC分类号： C30B13/24 ,  C03B29/06 ,  C30B13/34 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/02672 ,  H01L21/02675 ,  H01L21/02691 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays.

摘要翻译： 廉价的半导体通过在廉价的衬底上沉积单晶或大晶粒硅来制造。 这些半导体在足够低的温度（例如低于玻璃熔点的温度）下生产。 所生产的半导体适用于诸如光电或显示器的半导体器件。