Invention Grant
- Patent Title: Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
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Application No.: US12903750Application Date: 2010-10-13
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Publication No.: US08491718B2Publication Date: 2013-07-23
- Inventor: Praveen Chaudhari
- Applicant: Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari
- Agency: Carter Ledyard & Milburn
- Agent Keith D. Nowak; Libby Babu Varghese
- Main IPC: C30B25/00
- IPC: C30B25/00

Abstract:
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.
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