- 专利标题： Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
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申请号： US14979285申请日： 2015-12-22
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公开(公告)号： US10199529B2公开(公告)日： 2019-02-05
- 发明人: Praveen Chaudhari , Ashok Chaudhari
- 申请人： Karin Chaudhari , Ashok Chaudhari , Pia Chaudhari
- 申请人地址： US NY Briarcliff Manor
- 专利权人： Solar-Tectic, LLC
- 当前专利权人： Solar-Tectic, LLC
- 当前专利权人地址： US NY Briarcliff Manor
- 代理机构： Carter Ledyard & Milburn LLP
- 代理商 Danielle C. Sullivan
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L31/18 ; C30B11/12 ; C30B29/06 ; C30B23/02 ; C30B25/02 ; C30B25/18 ; C30B19/00 ; C30B29/52
摘要：
A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.
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