Multi-beam scanning electron beam device and methods of using the same
    1.
    发明授权
    Multi-beam scanning electron beam device and methods of using the same 有权
    多光束扫描电子束装置及其使用方法

    公开(公告)号:US09153413B2

    公开(公告)日:2015-10-06

    申请号:US12528307

    申请日:2008-02-22

    Abstract: A multi-beam scanning electron beam device (100) is described. The multi-bea scanning electron beam device having a column, includes a multi-beam emitter (110) for emitting a plurality of electron beams (12,13,14), at least one common electron beam optical element (130) having a common opening for at least two of the plurality of electron beams and being adapted for commonly influencing at least two of the plurality of electron beams, at least one individual electron beam optical element (140) for individually influencing the plurality of electron beams, a common objective lens assembly (150) for focusing the plurality of electrons beams having a common excitation for focusing at least two of the plurality of electron beams, and adapted for focusing the plurality of electron beams onto a specimen (20) for generation of a plurality of signal beams (121, 131,141), and a detection assembly (170) for individually detecting each signal beam on a corresponding detection element.

    Abstract translation: 描述了多光束扫描电子束装置(100)。 具有列的多头扫描电子束装置包括用于发射多个电子束(12,13,14)的多光束发射器(110),至少一个共同的电子束光学元件(130) 用于多个电子束中的至少两个的开口,并适用于共同影响多个电子束中的至少两个,用于单独影响多个电子束的至少一个单独的电子束光学元件(140),共同的目标 透镜组件(150),用于聚焦具有用于聚焦多个电子束中的至少两个的共同激发的多个电子束,并且适于将多个电子束聚焦到样本(20)上以产生多个信号 光束(121,131,141)和检测组件(170),用于分别检测相应检测元件上的每个信号光束。

    Method and apparatus of pretreatment of an electron gun chamber
    2.
    发明授权
    Method and apparatus of pretreatment of an electron gun chamber 有权
    电子枪室预处理方法及装置

    公开(公告)号:US08878148B2

    公开(公告)日:2014-11-04

    申请号:US12888978

    申请日:2010-09-23

    Abstract: A method of pre-treating an ultra high vacuum charged particle gun chamber by ion stimulated desorption is provided. The method includes generating a plasma for providing a plasma ion source, and applying a negative potential to at least one surface in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface.

    Abstract translation: 提供了一种通过离子刺激解吸预处理超高真空带电粒子枪室的方法。 该方法包括产生用于提供等离子体离子源的等离子体,以及向枪室中的至少一个表面施加负电位,其中负电位适于将离子通量从等离子体离子源提取到至少一个表面 用于通过撞击在至少一个表面上的离子通量从至少一个表面解吸污染颗粒。

    HIGH THROUGHPUT SCAN DEFLECTOR AND METHOD OF MANUFACTURING THEREOF
    3.
    发明申请
    HIGH THROUGHPUT SCAN DEFLECTOR AND METHOD OF MANUFACTURING THEREOF 审中-公开
    高切割扫描偏转器及其制造方法

    公开(公告)号:US20140264062A1

    公开(公告)日:2014-09-18

    申请号:US13934094

    申请日:2013-07-02

    Applicant: Pavel ADAMEC

    Inventor: Pavel ADAMEC

    Abstract: A magnetic deflector assembly configured for scanning a primary electron beam and providing an upgrade kit for a wafer imaging system is described. The assembly includes at least one magnetic deflector for scanning the beam over the wafer in one direction, wherein the at least one magnetic deflector comprises at least two coils forming a pair of the at least two coils, wherein the number of turns in the at least two coils is 8 or less and wherein a maximum dimension of a cross-section of a coil-forming wire or of a coil forming conductor is 0.2 mm or less.

    Abstract translation: 描述了构造成用于扫描一次电子束并提供用于晶片成像系统的升级套件的磁偏转器组件。 组件包括至少一个用于在一个方向上扫描晶片上的光束的磁偏转器,其中所述至少一个磁偏转器包括形成一对所述至少两个线圈的至少两个线圈,其中所述至少两个线圈中的匝数 两个线圈为8个以下,线圈成形线或线圈形成导体的截面的最大尺寸为0.2mm以下。

    Electrostatic lens assembly
    5.
    发明授权
    Electrostatic lens assembly 有权
    静电透镜组件

    公开(公告)号:US07872239B2

    公开(公告)日:2011-01-18

    申请号:US12181171

    申请日:2008-07-28

    Abstract: A lens assembly having an electrostatic lens component for a charged particle beam system is provided. The assembly includes: a first electrode having a conically shaped portion, a second electrode having a conically shaped portion, and a first insulator having a conically shaped portion, wherein the first insulator comprises two extending portions towards each of its ends, and wherein the two extending portions are formed to generate a gap between the insulator and each of the adjacent electrodes.

    Abstract translation: 提供一种具有用于带电粒子束系统的静电透镜部件的透镜组件。 组件包括:具有锥形部分的第一电极,具有锥形部分的第二电极和具有锥形部分的第一绝缘体,其中第一绝缘体包括朝向其每个端部的两个延伸部分,并且其中两个 形成延伸部分以在绝缘体和每个相邻电极之间产生间隙。

    HIGH THROUGHPUT SEM TOOL
    6.
    发明申请
    HIGH THROUGHPUT SEM TOOL 有权
    高通量扫描仪刀具

    公开(公告)号:US20100320382A1

    公开(公告)日:2010-12-23

    申请号:US12528307

    申请日:2008-02-22

    Abstract: A multi-beam scanning electron beam device (100) is described. The multi-bea scanning electron beam device having a column, includes a multi-beam emitter (110) for emitting a plurality of electron beams (12,13,14), at least one common electron beam optical element (130) having a common opening for at least two of the plurality of electron beams and being adapted for commonly influencing at least two of the plurality of electron beams, at least one individual electron beam optical element (140) for individually influencing the plurality of electron beams, a common objective lens assembly (150) for focusing the plurality of electrons beams having a common excitation for focusing at least two of the plurality of electron beams, and adapted for focusing the plurality of electron beams onto a specimen (20) for generation of a plurality of signal beams (121, 131,141), and a detection assembly (170) for individually detecting each signal beam on a corresponding detection element.

    Abstract translation: 描述了多光束扫描电子束装置(100)。 具有列的多头扫描电子束装置包括用于发射多个电子束(12,13,14)的多光束发射器(110),至少一个共同的电子束光学元件(130) 用于多个电子束中的至少两个的开口,并适用于共同影响多个电子束中的至少两个,用于单独影响多个电子束的至少一个单独的电子束光学元件(140),共同的目标 透镜组件(150),用于聚焦具有用于聚焦多个电子束中的至少两个的共同激发的多个电子束,并且适于将多个电子束聚焦到样本(20)上以产生多个信号 光束(121,131,141)和检测组件(170),用于分别检测相应检测元件上的每个信号光束。

    METHOD AND DEVICE FOR IMPROVED ALIGNMENT OF A HIGH BRIGHTNESS CHARGED PARTICLE GUN
    7.
    发明申请
    METHOD AND DEVICE FOR IMPROVED ALIGNMENT OF A HIGH BRIGHTNESS CHARGED PARTICLE GUN 有权
    用于改善高亮度充电颗粒枪对准的方法和装置

    公开(公告)号:US20100108904A1

    公开(公告)日:2010-05-06

    申请号:US12264848

    申请日:2008-11-04

    Applicant: PAVEL ADAMEC

    Inventor: PAVEL ADAMEC

    CPC classification number: H01J37/1471 H01J2237/1501

    Abstract: A charged particle gun alignment assembly for emitting a charged particle beam along an optical axis of a charged particle beam device is described. The charged particle gun alignment assembly is configured to compensate for misalignment of the charged particle beam and includes a charged particle source having an emitter with a virtual source defining a virtual source plane substantially perpendicular to the optical axis; a condenser lens for imaging the virtual source; a final beam limiting aperture adapted for shaping the charged particle beam; and a double stage deflection assembly positioned between the condenser lens and the final beam limiting aperture, wherein the working distance of the condenser lens is 15 mm or less.

    Abstract translation: 描述了一种用于沿带电粒子束装置的光轴发射带电粒子束的带电粒子枪对准组件。 带电粒子枪对准组件被配置为补偿带电粒子束的未对准,并且包括具有发射器的带电粒子源,发射器具有限定基本上垂直于光轴的虚拟源平面的虚拟源; 用于对虚拟源成像的聚光透镜; 用于对带电粒子束进行成形的最终光束限制孔; 以及位于聚光透镜和最终光束限制孔之间的双级偏转组件,其中聚光透镜的工作距离为15mm或更小。

    Charged particle beam emitting device and method for operating a charged particle beam emitting device
    8.
    发明授权
    Charged particle beam emitting device and method for operating a charged particle beam emitting device 有权
    带电粒子束发射装置和用于操作带电粒子束发射装置的方法

    公开(公告)号:US07595490B2

    公开(公告)日:2009-09-29

    申请号:US11469728

    申请日:2006-09-01

    CPC classification number: H01J37/073 H01J2237/022 H01J2237/06325

    Abstract: A method for operating a charged particle beam emitting device and, in particular, an electron beam emitting device including a cold field emitter is provided. The method includes the steps of placing the cold field emitter in a vacuum of a given pressure, the emitter exhibiting a high initial emission current I0 and a lower stable mean emission current IS under a given electric extraction field; applying the given electric extraction field to the emitter for emitting electrons from the emitter surface; performing a cleaning process by applying at least one heating pulse to the cold field emitter for heating the emitter surface, whereby the cleaning process is performed before the emission current of the cold field emitter has declined to the lower stable mean emission value IS; and repeating the cleaning process to keep the emission current of the emitter continuously above the substantially stable emission value IS.

    Abstract translation: 提供了一种用于操作带电粒子束发射器件的方法,特别是包括冷场发射器的电子束发射器件。 该方法包括以下步骤:将冷场发射器置于给定压力的真空中,发射体在给定的电提取场下表现出高的初始发射电流I0和较低的稳定平均发射电流IS; 将给定的电提取场施加到发射器以从发射器表面发射电子; 通过向冷场发射器施加至少一个加热脉冲来加热发射体表面来执行清洁处理,由此在冷场发射器的发射电流已经下降到较低的稳定平均发射值IS之前进行清洁处理; 并重复清洁处理以将发射极的发射电流连续地保持在基本上稳定的发射值IS上。

    CHARGED PARTICLE BEAM DEVICE AND METHOD FOR INSPECTING SPECIMEN
    9.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND METHOD FOR INSPECTING SPECIMEN 有权
    充电颗粒光束装置和检测样品的方法

    公开(公告)号:US20080048116A1

    公开(公告)日:2008-02-28

    申请号:US11781794

    申请日:2007-07-23

    Abstract: A charged particle beam device is provided. The device includes a primary objective lens for focusing a primary charged particle beam, the primary objective lens defining an optical axis, a specimen stage defining a specimen location area, a deflection unit for deflecting the primary charged particle beam between the primary objective lens and the specimen location area, towards a beam path for impingement on the specimen, wherein the deflection unit is movable with respect to the optical axis.

    Abstract translation: 提供带电粒子束装置。 该装置包括用于聚焦初级带电粒子束的主物镜,限定光轴的主物镜,限定样本位置区域的样本台,用于使主要物镜和第一物镜之间的初级带电粒子束偏转的偏转单元 样本定位区域,朝向用于冲击样本的光束路径,其中偏转单元可相对于光轴移动。

    Electron emission device
    10.
    发明授权
    Electron emission device 有权
    电子发射装置

    公开(公告)号:US07268361B2

    公开(公告)日:2007-09-11

    申请号:US10483114

    申请日:2002-07-01

    CPC classification number: H01J1/3044 H01J2201/319

    Abstract: The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7 a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting, the voltage between emitter tip 9 and extracting electrode 5 which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.

    Abstract translation: 本发明提供一种包括至少一个场发射阴极3和至少一个提取电极5的电子束装置1,由此场发射阴极5包括连接到由半导体材料制成的发射极尖端9的p型半导体区域7, 在p型半导体区域7上形成p型二极管结13的n型半导体区域11,p型半导体区域7上的第一电接触15和n型半导体区域11上的第二电接触17。 p型半导体区域7防止自由电子束流到发射极,除非电子被pn二极管结13注入到p型半导体区域7中。这样,场发射阴极3可以产生电子束,其中 电子束电流由跨越pn二极管结的正向偏置第二电压V 2控制。 这种电子束电流具有改善的电流值稳定性。 此外,电子束电流不必通过调节发射极尖端9和提取电极5之间的电压,这将干扰电子束光学器件的电场。 本发明还提供如上所述的场致发射阴极和场发射阴极阵列。 本发明还提供了一种产生至少一个电子束的方法。

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